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IF1322 Abstract: IN1322B NJ132L DIFFERENTIAL/VCW23-5G-2- Text: 8/2014 IF1322A, IN1322B N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ ∙ Absolute maximum ratings at TA = 25oC Low Noise, High Gain Amplifier Reverse Gate Source & Gate Drain Voltage -20V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation	Original	PDF	IF1322A, IN1322B 480mW -65oC 150oC IF1322 IF1322 IN1322B NJ132L DIFFERENTIAL/VCW23-5G-2-

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IF1322

Abstract: IN1322B NJ132L DIFFERENTIAL/VCW23-5G-2-
Text: 8/2014 IF1322A, IN1322B N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ ∙ Absolute maximum ratings at TA = 25oC Low Noise, High Gain Amplifier Reverse Gate Source & Gate Drain Voltage -20V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation

Original

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IF1322A, IN1322B 480mW -65oC 150oC IF1322 IF1322 IN1322B NJ132L DIFFERENTIAL/VCW23-5G-2-