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    IN 956 Search Results

    IN 956 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74F433SPC Rochester Electronics LLC FIFO, Visit Rochester Electronics LLC Buy
    74F403SPC Rochester Electronics LLC Replacement for Fairchild part number 74F403SPC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    CY7C429-20VC Rochester Electronics LLC FIFO, 2KX9, 20ns, Asynchronous, CMOS, PDSO28, 0.300 INCH, SOJ-28 Visit Rochester Electronics LLC Buy
    CY7C429-25JI Rochester Electronics LLC FIFO, 2KX9, 25ns, Asynchronous, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    CY7C4285-15ASC Rochester Electronics LLC FIFO, 64KX18, 10ns, Synchronous, CMOS, PQFP64, 10 X 10 MM, TQFP-64 Visit Rochester Electronics LLC Buy
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    IN 956 Price and Stock

    Klein Tools Inc 6956INS

    Screwdrivers, Nut Drivers & Socket Drivers Slim-Tip 1000V Insulated Screwdriver, #1 Phillips, 6-Inch
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    Mouser Electronics 6956INS 4
    • 1 $19.06
    • 10 $18
    • 100 $16.42
    • 1000 $16.18
    • 10000 $16.18
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    Hirschmann Electronics GmbH & Co Kg TofinoXe-0200T1T1TDDZ90003TATX

    Networking Modules TofinoXe-0200T1T1TDDZ90003TATX
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    Mouser Electronics TofinoXe-0200T1T1TDDZ90003TATX
    • 1 $2850.16
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    Central Semiconductor Corp 2N5956 TIN/LEAD

    Bipolar Transistors - BJT 50Vcbo 50Vcev 45Vcer 5.0Vebo 40W
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    Mouser Electronics 2N5956 TIN/LEAD
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    • 100 $15.63
    • 1000 $13.33
    • 10000 $13.33
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    Molex 19193-0089

    Ring Tongue Terminal 14-16AWG 17.7mm 8.9mm Tin VersaKrimp™ Bag
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 19193-0089 956
    • 1 $0.2728
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    Eaton Bussmann BK/AGA-2-1/2

    Fuse Miniature Fast Acting 2.5A 125V Holder Cartridge 6.35 X 15.88mm Glass
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BK/AGA-2-1/2 956
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    • 100 $1.68
    • 1000 $0.5029
    • 10000 $0.4886
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    Find more IN 956 price and stock on Findchips.com

    IN 956 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Silicon Technology Reliability

    Abstract: 72559
    Text: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 5251 467 181 956 1.948 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,


    Original     		PDF JESD85, 29-Jul-08 Silicon Technology Reliability 72559

    Untitled

    Abstract: No abstract text available
    Text: Silicon Technology Reliability Vishay Siliconix P-CHANNEL ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 23 354 3 956 497 623 1.314 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,


    Original     		PDF JESD85, 28-Jul-08

    Sony CXA1191M

    Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
    Text: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22


    Original     		PDF 0512d ------------------------------------0512d z86e04 Sony CXA1191M philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide

    harris rtx 2010

    Abstract: HS-RTX2010RH 32Kword A45A harris rtx 2000 HS8-RTX2010RH MIL-PRF38535
    Text: HS-RTX2010RH Radiation Hardened Real Time Express Microcontroller March 1996 Features Applications • Devices QML Qualified in Accordance with MIL-PRF38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95636 and Harris’ QM Plan


    Original     		PDF HS-RTX2010RH MIL-PRF38535 125ns 120MeV/mg/cm2 -55oC 125oC, 16-Bit 32-Bit harris rtx 2010 HS-RTX2010RH 32Kword A45A harris rtx 2000 HS8-RTX2010RH MIL-PRF38535

    computer mouse circuit diagram

    Abstract: computer mouse optical circuit diagram "Mouse Controller" ball mouse mechanical mouse microsoft optical mouse crystal 3.58MHZ oscillator single chip optical mouse SERIAL MOUSE CONTROLLER PHOTO FOR ZENER DIODE 6.2V
    Text: EM83702 EM83702 ALL IN ONE MOUSE CONTROLLER ALL IN ONE MOUSE CONTROLLER Patent Number : 38715, 95661 R.O.C Patent Pending : 84200836 (R.O.C) GENERAL DESCRIPTION The EM83702 Mouse Controller is specially designed to control mouse device. This single chip can interface


    Original     		PDF EM83702 EM83702 RS-232C. EM83702A 58MHz) EM83702B computer mouse circuit diagram computer mouse optical circuit diagram "Mouse Controller" ball mouse mechanical mouse microsoft optical mouse crystal 3.58MHZ oscillator single chip optical mouse SERIAL MOUSE CONTROLLER PHOTO FOR ZENER DIODE 6.2V

    Untitled

    Abstract: No abstract text available
    Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5.

    555 triangular wave

    Abstract: IRG4BC30FD1PBF
    Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5. O-220 555 triangular wave IRG4BC30FD1PBF

    swiching transistor

    Abstract: 9561 600v 8A ultra fast recovery diode to220
    Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1PbF 20kHz O-220AB Minimi10 FD100H06A5. O-220 swiching transistor 9561 600v 8A ultra fast recovery diode to220

    Untitled

    Abstract: No abstract text available
    Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5.

    Untitled

    Abstract: No abstract text available
    Text: PD -95651A IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF -95651A IRG4BC30FPbF O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30FPbF O-220AB O-220AB O-220AB.

    Untitled

    Abstract: No abstract text available
    Text: PD -95651A IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF -95651A IRG4BC30FPbF O-220AB O-220AB TC4BC30FPbF

    Untitled

    Abstract: No abstract text available
    Text: PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30FPbF O-220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30FPbF O-220AB O-220AB TC037) O-220AB.

    transistor A6t 75

    Abstract: A6T TRANSISTOR
    Text: PD - 95692A IRG4BC30U-SPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5692A IRG4BC30U-SPbF VC957) EIA-418. transistor A6t 75 A6T TRANSISTOR

    Voltage Doubler application

    Abstract: application of voltage doubler Schottky Doubler Voltage Doubler introduction rf power detector voltage doubler 5964-4236E stub tuner matching 5082-0023
    Text: Schottky Diode Voltage Doubler Application Note 956-4 Circuit Description Figure 1 shows a simple voltage doubler circuit that was assembled in HP Package 60 and tested at 2 GHz. In this version of the doubler, opposite polarity chips are needed. The shunt chip


    Original     		PDF 5964-4236E Voltage Doubler application application of voltage doubler Schottky Doubler Voltage Doubler introduction rf power detector voltage doubler 5964-4236E stub tuner matching 5082-0023

    transistor A6t 75

    Abstract: A6T TRANSISTOR a8p transistor ic DAD 1000 transistor A6t 15 transistor a6t AAGR transistor A6t 14 transistor A6t 96 AN-994
    Text: PD - 95692A IRG4BC30U-SPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5692A IRG4BC30U-SPbF EIA-418. transistor A6t 75 A6T TRANSISTOR a8p transistor ic DAD 1000 transistor A6t 15 transistor a6t AAGR transistor A6t 14 transistor A6t 96 AN-994

    Voltage Doubler application

    Abstract: application of voltage doubler Schottky Doubler Microwave detector diodes microwave detector diode 5082-0009 stub tuner matching
    Text: hH Schottky Diode Voltage Doubler Application Note 956-4 Circuit Description Figure 1 shows a simple voltage doubler circuit that was assembled in HP Package 60 and tested at 2 GHz. In this version of the doubler, opposite polarity chips are needed. The shunt chip


    Original     		PDF 5964-4236E Voltage Doubler application application of voltage doubler Schottky Doubler Microwave detector diodes microwave detector diode 5082-0009 stub tuner matching

    Untitled

    Abstract: No abstract text available
    Text: Shrouded Headers 2.00 x 2.00 mm [0.079 x 0.079 in. Description Through-Mount Vertical Header Part Number 90309 . 0.80 mm ' 0.031 In.) RECOM M EN DED HO LE PATTERN r - i i- Description Surface-Mount Vertical Header Part Number 95615 2.00 m m (0.039 in.) 1.00 mm _


    OCR Scan     		PDF DPS-12-011 iDDS411 00023bfl

    AN-956A

    Abstract: No abstract text available
    Text: AN-956A Using Surface-Mount Devices HEXFET is a tradem ark o f International Rectifier by W. Parrish Summary Surface-Mount Packages S u rfa c e -m o u n t te c h n o lo g y is g a in in g in creasin g accep tan ce over th ro u g h -h o le m o u n tin g . In te rn a tio n a l


    OCR Scan     		PDF AN-956A AN-956A

    5082-2565

    Abstract: power semiconductor 1973 noise diode
    Text: H vl S a c k a b d APPLICATION NOTE 956-3 Flicker Noise in Schottky Diodes IN TRO D U CTIO N At frequencies above a few megahertz, Schottky barriers emit noise at a power level which is half as mucM1] as the familiar Johnson noise of a re­ sistor. The presence of series resistance in the


    OCR Scan     		PDF

    2N956

    Abstract: 2N718A
    Text: 2N718A 2N 956 SILICON PLANAR NPN AMPLIFIERS AND SWITCHES T he 2N 7 1 8 A and 2N 9 5 6 are s ilico n planar e p ita xia l NPN tran sisto rs in Jedec T O -1 8 m etal case, in te n de d fo r high-speed sw itch in g and a m p lifie r applica tio ns. ABSOLUTE M A XIM U M RATINGS


    OCR Scan     		PDF 2N718A 2N718A 2N956 300juA 2N956

    Taiyo 93 T

    Abstract: Taiyo 93 r
    Text: TAIYO YUDEN N R 9560 H Y B R I D ICs CAR AUDIO Dolby B /C Type NR NR9560 is a h ig h ly in te g ra te d 1C w h ic h c o n ta in s in its in ­ OUTLINE DIMENSIONS s id e CXA1332, w h ic h is on e c h ip 1C o f 2 c h a n n e l d o lb y B /C ty p e n o is e re d u c tio n syste m , and its a u x ilia ry c irc u its .


    OCR Scan     		PDF NR9560 CXA1332, NR9560 Taiyo 93 T Taiyo 93 r

    BERG CONNECTOR 50 pin

    Abstract: MIL-P-55110 10 PIN 2 ROW berg connector berg electronics berg connector 36 pin B-159 QQ-W-343 2 pin BERG CONNECTOR pm50 95660-XYYH
    Text: 2.54 X Unshrouded Headers 2.54 mm 0.100 x 0.100 in. Description Straight 3-Row BergStik II Headers 4.06 mm (0.160 in.) MIN _ 1.02 mm (0.040 in.) \ DIA i i i i 7.37 mm (0.290 in.) l I I 5.06 mm (0.200 in.) ! I 2.54 mm (0.100 In.) 2.54 mm (0.100 in.) NON-ACCUMULATIVE


    OCR Scan     		PDF A183396-D199 BUS-12-050 1DDS411 BERG CONNECTOR 50 pin MIL-P-55110 10 PIN 2 ROW berg connector berg electronics berg connector 36 pin B-159 QQ-W-343 2 pin BERG CONNECTOR pm50 95660-XYYH