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    IMPATT DIODE W BAND Search Results

    IMPATT DIODE W BAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    IMPATT DIODE W BAND Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    impatt diode

    Abstract: impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK
    Text: IMPATT Diodes and Test Fixtures Golden contact 0.4 0.15 IMPATT Ruby box Copper Heat Sink with gold covering A • 25-155 GHz frequency range • Pulse and CW version • 20W pulse, 200 mW CW operation • Delivery from stock • Low cost A=5.6 mm, B=3.0 mm for Ka – Band


    Original     		110VAC, 220VAC, impatt diode impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK PDF

    MA460

    Abstract: APC7 connector impatt diode a4602 A4604 IMPATT impatt diode operation
    Text: jyfocôYi MA46021-MA46049 Series CW Gallium Arsenide IMPATT Diodes 0.5-4 Watts C,X, and Ku-Band Features • DIRECT CONVERSION FOR DC TO RF WITH >15% EFFICIENCY LOW-HIGH-LOW ■ DIRECT CONVERSION FOR DC TO RF WITH > 10% EFFICIENCY (FLAT PROFILE) ■ LOW AM AND FM NOISE


    OCR Scan     		MA46021-MA46049 MA46030, MA460 APC7 connector impatt diode a4602 A4604 IMPATT impatt diode operation PDF

    impatt diode

    Abstract: No abstract text available
    Text: • SECTION MILLIMETER-WAVE DIODES Mb133□3 0 0 0 0 6 1 1 0 IMPATT Diodes and Test Fixtures HUGHES/ HICRObJAVE PRDTS 11E D. 3 Hughes 4710xH series IMPATT diodes are silicon double "J'-O"? - I drift diodes mounted in hermetically sealed packages and supplied mounted to a copper heat sink. Standard products


    OCR Scan     		Mb133â 4710xH impatt diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 4613303 HUGHES, 95D MICROWAVE PRDTS 00486 D T -* 7 -// SECTION MILLIMETER-WAVE DIODES IMPATT Diodes and Test Fixtures TS DE | 4L13303 □□□04flb 4 3 Hughes 4710xH series IMPATT diodes are silicon double '• - drift diodes mounted in hermetically sealed packages and :


    OCR Scan     		4L13303 04flb 4710xH PDF

    T393D

    Abstract: impatt diode MICROWAVE ASSOCIATES impatt diode operation impatt ODS-91 radar impatt impatt diode W band
    Text: 5 6 4 2 2 1 4 M / A - C O M SEMICÖ^ffUCtÖR "t 3 MICROWAVE ASSOCIATES A ^ C O M r u n k i T C 93D 00522 D Ë^ jsm aa m oaoasaa 7= 7 // a COMPANY MA-4B600 SERIES Silicon Double D rift CW IM PATT Diodes it Description Features Silicon Double Drift IMPATT IMPact Ionization


    OCR Scan     		MA-4B600 T393D impatt diode MICROWAVE ASSOCIATES impatt diode operation impatt ODS-91 radar impatt impatt diode W band PDF

    impatt diode

    Abstract: impatt diode operation AN961 5082-0710 IMPATT
    Text: 5082-0710 X-BAND 5082-0716 Ku-BAIMD SILICON DOUBLE DRIFT IMPATT DIODES FOR PULSED POWER SOURCES H E W L E T T ^ PACKARD COMPONENTS Features HIGH PEAK POWER Typically Greater Than 14W Peak at 10 GHz, and 11W Peak at 16 GHz HIGH AVERAGE POWER 25% Duty Cycle at Peak Power Rating


    OCR Scan     		MIL-S-19500 impatt diode impatt diode operation AN961 5082-0710 IMPATT PDF

    hp 5082 step recovery

    Abstract: HP 5082-0113 HP STEP RECOVERY DIODES 5082-0151 1N5164 1N5163 1430C 5082-0800 hp 5082-0151 1N4547
    Text: STEP RECOVERY DIODES COMPONENTS Features AND STEP RECOVERY OPTIMIZED FOR BOTH LOW AND HIGH ORDER MULTIPLIER DESIGNS FROM UHF THROUGH Ku BAND PASSIVATED CHIP FOR MAXIMUM STABILITY AND RELIABILITY AVAILABLE IN A VARIETY OF PACKAGES SPECIAL ELECTRICAL SELECTIONS AVAILABLE


    OCR Scan     		MIL-S-19500. hp 5082 step recovery HP 5082-0113 HP STEP RECOVERY DIODES 5082-0151 1N5164 1N5163 1430C 5082-0800 hp 5082-0151 1N4547 PDF

    gunn diode x band series 45200

    Abstract: MA45200 A4520
    Text: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM ■ AVAILABLE IN CERAMIC PACKAGES ■ CUSTOM DESIGNS AVAILABLE ■ LOW POST TUNING DRIFT ■ FREQUENCY RANGE VHF — Ku-BAND ■ CAN BE SCREENED TO TX, TXV


    OCR Scan     		MA45200 gunn diode x band series 45200 A4520 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pgfltt G E C P L E S S E Y DS3410-1.2 DC4600/4700 Series GaAs HYPERABRUPT TUNING VARACTORS The introduction of hyperabrupt junction varactors brings the advantages of linear electronic tuning to the microwave circuit designer. GEC Plessy Semiconductors Microwave's


    OCR Scan     		DS3410-1 DC4600/4700 DC4600 andDC4700 PDF

    schematic WELDER

    Abstract: gold melting furnace ultrasonic bond
    Text: Bonding and Handling Procedures for Chip Devices DISCUSSION Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last few years. Today's circuit designer is faced with a multiplicity of alter­ natives in the selection of diodes and packaging with each


    OCR Scan     		OT-23 schematic WELDER gold melting furnace ultrasonic bond PDF

    GUNN DIODE plessey

    Abstract: E1018 impatt Gunn Diode plessey impatt DC4702-3 barrier varactor gunn diode oscillator DC4601-4 DC4602-3
    Text: 37tflSE2 0 0 1 8 5 7 0 1TE • P L S B Si GEC PLESSEY S E M I C O N D U C T O R S D S 3 4 1 0 - 1.2 DC4600/4700 Series GaAs HYPERABRUPT TUNING VARACTORS The introduction of hyperabrupt junction varactors brings the advantages of linear electronic tuning to the microwave


    OCR Scan     		37hflSSE DS3410-1 DC4600/4700 GUNN DIODE plessey E1018 impatt Gunn Diode plessey impatt DC4702-3 barrier varactor gunn diode oscillator DC4601-4 DC4602-3 PDF

    TEMEX quartz

    Abstract: AT6925 AT6924-3
    Text: TEMEX MICROWAVE TUNING ELEMENTS General matters A - BUSHING WITH METALLIC ROTOR Tuning elements with metallic posts are simple and straight-forward in design. Each tuning unit consists of two parts, a threaded mounting bushing and a selflocking rotor screw that won’t vibrate


    Original     		AT6924-1 AT6924-2 AT6922 TEMEX quartz AT6925 AT6924-3 PDF

    millimeter wave radar

    Abstract: DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band
    Text: Afacm MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide


    OCR Scan     		MA48700 millimeter wave radar DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band PDF

    missile seeker

    Abstract: varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band
    Text: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM 30 J — 'V 3 El ~ r ■ ■ ■ ■ AVAILABLE IN CERAMIC PACKAGES CUSTOM DESIGNS AVAILABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF —


    OCR Scan     		MA45200 missile seeker varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band PDF

    gunn diode ghz s-parameter

    Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
    Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.


    Original     		AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO PDF

    Gunn Diode

    Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
    Text: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property


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    transistor A562

    Abstract: A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 April 2011. INCH-POUND MIL-PRF-19500P 20 October 2010 SUPERSEDING MIL-PRF-19500N 30 November 2005 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICES,


    Original     		MIL-PRF-19500P MIL-PRF-19500N transistor A562 A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE PDF

    8-12 GHz Yig Tuned Oscillator

    Abstract: PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators
    Text: PHILIPS & Microwave Products s iv a ts a m The Company SIVERS IMA In January 1984 the two microwave companies Sivers Lab est. 1951 and I.M.A. (est. 1975) were merged into one of the leading European supplier of microwave products: SIVERS IMA AB. The main product lines are Switches, Rotary Joints,


    OCR Scan     		MIL-C-45662) S-126 17173-SILAB-S S-163 8-12 GHz Yig Tuned Oscillator PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 PDF

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071 PDF

    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


    OCR Scan     		PDF

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


    OCR Scan     		PDF

    DIL Reed relay RS -349-399

    Abstract: LK NES IEC 292-1 ECG transistor replacement guide book free electrode oven calibration certificate formats dl-1d31 1a. 250v /reed relay rs 349-355 LCD LM 225X Ferroxcube pot core 6656 Semicon volume 1 l/DIL Reed relay RS -349-399 Siemens Optoelectronic Data Book
    Text: Issued November 1987 8420 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system


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    stepping motor EPSON EM - 234

    Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
    Text: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system


    OCR Scan     		RS232 RS232C stepping motor EPSON EM - 234 EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A PDF