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    IMPATT DIODE OPERATION Search Results

    IMPATT DIODE OPERATION Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    IMPATT DIODE OPERATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    impatt diode

    Abstract: impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK
    Text: IMPATT Diodes and Test Fixtures Golden contact 0.4 0.15 IMPATT Ruby box Copper Heat Sink with gold covering A • 25-155 GHz frequency range • Pulse and CW version • 20W pulse, 200 mW CW operation • Delivery from stock • Low cost A=5.6 mm, B=3.0 mm for Ka – Band


    Original     		PDF 110VAC, 220VAC, impatt diode impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK

    philips circulator 2722 162

    Abstract: uhf circulator IMPATT Diode Gunn Diode symbol isoductor IMPATT-Diode oscillator tunnel diode gunn diode generator Circulators and isolators impatt diode datasheet
    Text: PROFESSIONAL COMPONENTS DATA SHEET GENERAL Circulators and isolators 1998 Feb 20 Supersedes data of July 1994 File under Professional Components, PC06 Philips Semiconductors Circulators and isolators GENERAL non-reciprocal behaviour occurs when a RF signal,


    Original     		PDF MBK628 philips circulator 2722 162 uhf circulator IMPATT Diode Gunn Diode symbol isoductor IMPATT-Diode oscillator tunnel diode gunn diode generator Circulators and isolators impatt diode datasheet

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application

    gunn diode ghz s-parameter

    Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
    Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.


    Original     		PDF AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO

    mcz 300 1bd

    Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
    Text: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION


    Original     		PDF 128bit Division/e-Busin125 mcz 300 1bd SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode

    transistor A562

    Abstract: A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 April 2011. INCH-POUND MIL-PRF-19500P 20 October 2010 SUPERSEDING MIL-PRF-19500N 30 November 2005 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICES,


    Original     		PDF MIL-PRF-19500P MIL-PRF-19500N transistor A562 A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE

    impatt diode

    Abstract: impatt diode operation IMPATT GaAs impatt diode
    Text: M/A-COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION GaAs IMPATT DIODE SELECTION GUIDE PRODUCTS OPERATION Frequency Range GHz Case Style ODS # 0.5 CW IMPATTS PULSED IMPATT DIODES Minimum CW Output Power in Watts Min. Peak Pulse Power In Watts 1.0


    OCR Scan     		PDF ODS-275 ODS-111 ODS-92 ODS-940 impatt diode impatt diode operation IMPATT GaAs impatt diode

    impatt diode

    Abstract: MA460 IMPATT GaAs impatt diode MA46019-MA46048 030NH MA46046 radar impatt MIL-STD-750 METHOD 1031 MA46019
    Text: MA46019-MA46048 Series High Power Pulsed GaAs IMPATT Diodes Features • HIGH PEAK OUTPUT 30W AT 9.0-10.0 GHz 12W AT 8.0-10.0 GHz 10W AT 5.5-17.5 GHz ■ HIGH EFFICIENCY — TYPICALLY 20% ■ BURNOUT RESISTANCE TO CIRCUIT MISMATCHES ■ HIGH RELIABILITY ■ HIGH & LOW DUTY CYCLE OPERATION


    OCR Scan     		PDF MA46019-MA46048 impatt diode MA460 IMPATT GaAs impatt diode 030NH MA46046 radar impatt MIL-STD-750 METHOD 1031 MA46019

    impatt diode

    Abstract: IMPATT MA46045 radar impatt impatt diode operation MA46046 MA46019-MA46048 MA46019 MIL-STD-750 METHOD 1031 GaAs impatt diode
    Text: JVjfacßm MA46019-MA46048 Series High Power Pulsed GaAs IMPATT Diodes Features • HIGH PEAK OUTPUT 30W AT 9.0-10.0 GHz 12W AT 8.0-10.0 GHz 10W AT 5.5-17.5 GHz ■ HIGH EFFICIENCY — TYPICALLY 20% ■ BURNOUT RESISTANCE TO CIRCUIT MISMATCHES ■ HIGH RELIABILITY


    OCR Scan     		PDF MA46019-MA46048 MA46045 MA46047 MA46019 MA46020 impatt diode IMPATT radar impatt impatt diode operation MA46046 MIL-STD-750 METHOD 1031 GaAs impatt diode

    MA460

    Abstract: APC7 connector impatt diode a4602 A4604 IMPATT impatt diode operation
    Text: jyfocôYi MA46021-MA46049 Series CW Gallium Arsenide IMPATT Diodes 0.5-4 Watts C,X, and Ku-Band Features • DIRECT CONVERSION FOR DC TO RF WITH >15% EFFICIENCY LOW-HIGH-LOW ■ DIRECT CONVERSION FOR DC TO RF WITH > 10% EFFICIENCY (FLAT PROFILE) ■ LOW AM AND FM NOISE


    OCR Scan     		PDF MA46021-MA46049 MA46030, MA460 APC7 connector impatt diode a4602 A4604 IMPATT impatt diode operation

    T393D

    Abstract: impatt diode MICROWAVE ASSOCIATES impatt diode operation impatt ODS-91 radar impatt impatt diode W band
    Text: 5 6 4 2 2 1 4 M / A - C O M SEMICÖ^ffUCtÖR "t 3 MICROWAVE ASSOCIATES A ^ C O M r u n k i T C 93D 00522 D Ë^ jsm aa m oaoasaa 7= 7 // a COMPANY MA-4B600 SERIES Silicon Double D rift CW IM PATT Diodes it Description Features Silicon Double Drift IMPATT IMPact Ionization


    OCR Scan     		PDF MA-4B600 T393D impatt diode MICROWAVE ASSOCIATES impatt diode operation impatt ODS-91 radar impatt impatt diode W band

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLI» SbE » • 5544200 0000502 b04 ■ LITT GALLIUM ARSENIDE PULSED IMPATT DIODES 9251 Series • • • • • • 5-21 GHz High Peak Output Power High Efficiency— Typically 18-20% Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF


    OCR Scan     		PDF 554M5D0 000G503 N57/N58

    Gunn Diode 72 GHz

    Abstract: MA456
    Text: AfoCC-û MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE \ i * r h f— — J 4 ■ LOW POST TUNING DRIFT - ■ CUSTOM DESIGNS AVAILABLE 1 = 54 / - "V V / ^ ■ FREQUENCY RANGE THROUGH


    OCR Scan     		PDF MA45300 Gunn Diode 72 GHz MA456

    schematic WELDER

    Abstract: gold melting furnace ultrasonic bond
    Text: Bonding and Handling Procedures for Chip Devices DISCUSSION Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last few years. Today's circuit designer is faced with a multiplicity of alter­ natives in the selection of diodes and packaging with each


    OCR Scan     		PDF OT-23 schematic WELDER gold melting furnace ultrasonic bond

    varactor diode capacitance measurement

    Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
    Text: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY


    OCR Scan     		PDF t-07-11 MA48700 varactor diode capacitance measurement impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz Gunn Diode e band

    millimeter wave radar

    Abstract: DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band
    Text: Afacm MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide


    OCR Scan     		PDF MA48700 millimeter wave radar DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band

    missile seeker

    Abstract: varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band
    Text: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM 30 J — 'V 3 El ~ r ■ ■ ■ ■ AVAILABLE IN CERAMIC PACKAGES CUSTOM DESIGNS AVAILABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF —


    OCR Scan     		PDF MA45200 missile seeker varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band

    missile seeker

    Abstract: police radar detector police radar detector detector m/a-com impatt police radar detector local oscillator frequency seeker gunn diode x band radar 46470 model impatt MA45234
    Text: M/ A - C O M S E M I C O N D t B R L N G T O N /ysKcm 11 _ ] > • S b M 2 2 1 M 00 ]:L2M2 1 ■ M I C ' . . . " MA45200 Series Silicon Abrupt Junction Tuning Varactors Features ■ HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM ■ AVAILABLE IN CERAMIC PACKAGES


    OCR Scan     		PDF SbM2214 0G01S42 MA45200 missile seeker police radar detector police radar detector detector m/a-com impatt police radar detector local oscillator frequency seeker gunn diode x band radar 46470 model impatt MA45234

    Gunn Diode

    Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
    Text: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property


    OCR Scan     		PDF

    8-12 GHz Yig Tuned Oscillator

    Abstract: PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators
    Text: PHILIPS & Microwave Products s iv a ts a m The Company SIVERS IMA In January 1984 the two microwave companies Sivers Lab est. 1951 and I.M.A. (est. 1975) were merged into one of the leading European supplier of microwave products: SIVERS IMA AB. The main product lines are Switches, Rotary Joints,


    OCR Scan     		PDF MIL-C-45662) S-126 17173-SILAB-S S-163 8-12 GHz Yig Tuned Oscillator PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


    OCR Scan     		PDF