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    IMPATT DIODE Search Results

    IMPATT DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    IMPATT DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

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    Abstract: No abstract text available
    Text: GaAs IMPATT DIODES TM MI5001 MI5022 Features Specified High Output Power High DC to Microwave Efficiency For Pulsed and CW Applications Applications Oscillators Avionic Systems Electronic Warfare Systems Smart Antennas Description Microsemi’s GaAs IMPATT diodes are fabricated utilizing


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    PDF MI5001 MI5022

    impatt diode

    Abstract: impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK
    Text: IMPATT Diodes and Test Fixtures Golden contact 0.4 0.15 IMPATT Ruby box Copper Heat Sink with gold covering A • 25-155 GHz frequency range • Pulse and CW version • 20W pulse, 200 mW CW operation • Delivery from stock • Low cost A=5.6 mm, B=3.0 mm for Ka – Band


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    PDF 110VAC, 220VAC, impatt diode impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK

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    Abstract: No abstract text available
    Text: PG0115X Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz) Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage40 I(Oper.) Typ.(A) Oper. Current Semiconductor Material Package StylePill-C Mounting StyleS


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    PDF PG0115X Power30m Voltage40

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    Abstract: No abstract text available
    Text: VAO12AN20 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power25m Frequency Min. (Hz)8G Frequency Max. (Hz)12G Efficiency Min.0.65 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current28m Semiconductor MaterialSilicon Package StylePill-C


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    PDF VAO12AN20 Power25m Voltage90 Current28m

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    Abstract: No abstract text available
    Text: PGG202-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew


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    PDF PGG202-83 Power200m Voltage110

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    Abstract: No abstract text available
    Text: VAO12FN20 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power400m Frequency Min. (Hz)8G Frequency Max. (Hz)12.4G Efficiency Min.6.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current85m Semiconductor MaterialSilicon Package StylePill-C


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    PDF VAO12FN20 Power400m Voltage90 Current85m

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    Abstract: No abstract text available
    Text: PGG206-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power300m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage100 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew


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    PDF PGG206-83 Power300m Voltage100

    impatt

    Abstract: impatt diode MI5022 impatt diode datasheet IMPATT-Diode
    Text: GaAs IMPATT DIODES TM MI5001 MI5022 Features ● Specified High Output Power ● High DC to Microwave Efficiency ● For Pulsed and CW Applications Applications ● Oscillators ● Avionic Systems ● Electronic Warfare Systems ● Smart Antennas Description


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    PDF MI5001 MI5022 impatt impatt diode MI5022 impatt diode datasheet IMPATT-Diode

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    Abstract: No abstract text available
    Text: VAO12DN19 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.2 V(Oper.) Nom.(V) Oper. Voltage75 I(Oper.) Typ.(A) Oper. Current35m Semiconductor MaterialSilicon Package StylePill-C


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    PDF VAO12DN19 Power100m Voltage75 Current35m

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    Abstract: No abstract text available
    Text: VSX9251S2 Diodes Pulse-Mode IMPATT Diode P o Min.(W) Output Power20 Frequency Min. (Hz)8G Frequency Max. (Hz)10G Efficiency Min.21 V(Oper.) Nom.(V) Oper. Voltage64 I(Oper.) Typ.(A) Oper. Current1.5 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT


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    PDF VSX9251S2 Power20 Voltage64

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    Abstract: No abstract text available
    Text: VAO12DN21 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.2 V(Oper.) Nom.(V) Oper. Voltage75 I(Oper.) Typ.(A) Oper. Current35m Semiconductor MaterialSilicon Package StylePill-C


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    PDF VAO12DN21 Power100m Voltage75 Current35m

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    Abstract: No abstract text available
    Text: 5082-0437 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)5.0G Frequency Max. (Hz)9.0G Efficiency Min.3.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StylePill-C


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    PDF Power100m Voltage110

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    Abstract: No abstract text available
    Text: ML4804 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power1.3 Frequency Min. (Hz)8.0G Frequency Max. (Hz)10G Efficiency Min.6.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT


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    PDF ML4804 Voltage110

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    Abstract: No abstract text available
    Text: VAO12EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-B


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    PDF VAO12EN22 Power200m Voltage80 Current45m

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    Abstract: No abstract text available
    Text: VAO12CN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power50m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.3.0 V(Oper.) Nom.(V) Oper. Voltage70 I(Oper.) Typ.(A) Oper. Current25m Semiconductor MaterialSilicon Package StylePill-B


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    PDF VAO12CN22 Power50m Voltage70 Current25m

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    Abstract: No abstract text available
    Text: ND9S12-1N Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power2.5 Frequency Min. (Hz)13G Frequency Max. (Hz) Efficiency Min.20 V(Oper.) Nom.(V) Oper. Voltage50 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT


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    PDF ND9S12-1N Voltage50

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    Abstract: No abstract text available
    Text: MA4988 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power10m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18.0G Efficiency Min.1.0 V(Oper.) Nom.(V) Oper. Voltage60 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT


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    PDF MA4988 Power10m Voltage60

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    Abstract: No abstract text available
    Text: RT8081 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power1.0 Frequency Min. (Hz)8.0G Frequency Max. (Hz) Efficiency Min.18 V(Oper.) Nom.(V) Oper. Voltage55 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePin Mounting StyleS


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    PDF RT8081 Voltage55

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    Abstract: No abstract text available
    Text: MS856B Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)15G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS


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    PDF MS856B Power200m

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    Abstract: No abstract text available
    Text: 4613303 HUGHES, 95D MICROWAVE PRDTS 00486 D T -* 7 -// SECTION MILLIMETER-WAVE DIODES IMPATT Diodes and Test Fixtures TS DE | 4L13303 □□□04flb 4 3 Hughes 4710xH series IMPATT diodes are silicon double '• - drift diodes mounted in hermetically sealed packages and :


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    PDF 4L13303 04flb 4710xH

    impatt diode

    Abstract: impatt diode operation IMPATT GaAs impatt diode
    Text: M/A-COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION GaAs IMPATT DIODE SELECTION GUIDE PRODUCTS OPERATION Frequency Range GHz Case Style ODS # 0.5 CW IMPATTS PULSED IMPATT DIODES Minimum CW Output Power in Watts Min. Peak Pulse Power In Watts 1.0


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    PDF ODS-275 ODS-111 ODS-92 ODS-940 impatt diode impatt diode operation IMPATT GaAs impatt diode

    impatt diode

    Abstract: No abstract text available
    Text: • SECTION MILLIMETER-WAVE DIODES Mb133□3 0 0 0 0 6 1 1 0 IMPATT Diodes and Test Fixtures HUGHES/ HICRObJAVE PRDTS 11E D. 3 Hughes 4710xH series IMPATT diodes are silicon double "J'-O"? - I drift diodes mounted in hermetically sealed packages and supplied mounted to a copper heat sink. Standard products


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    PDF Mb133â 4710xH impatt diode

    impatt diode

    Abstract: apc-7 connector Z 0607 CW doppler radar impatt radar impatt AN-968 cw doppler impatt diode operation AN962
    Text: H E W L E T T ^ PA CK ARD COMPONENTS SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 5082-0607 5082-0608 DIODES 5.9-8.4GHZ Features IMPATT AND STEP RECOVERY HIGH POWER O U TP U T Typically: 3W from 5.9 to 8.4 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IE N T OPERATIO N


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    PDF MIL-S-19500 impatt diode apc-7 connector Z 0607 CW doppler radar impatt radar impatt AN-968 cw doppler impatt diode operation AN962

    IMPATT

    Abstract: No abstract text available
    Text: IMPATT Diodes SELECTION GUIDE MODEL NUMBER PAGE MODEL NUMBER MA46019 MA46020 MA46021 MA46022 MA46023 MA46024 MA46025 MA46026 MA46027 MA46028 MA46029 MA46030 MA46031 MA46032 MA46033 . 10-5 ! 0-5 . 10-9


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    PDF MA46019 MA46020 MA46021 MA46022 MA46023 MA46024 MA46025 MA46026 MA46027 MA46028 IMPATT