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    IMD2 TRANSISTOR Search Results

    IMD2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IMD2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPV597

    Abstract: No abstract text available
    Text: , Dnc. ^s.mi- lonciuct oi The RF Line UHF Linear Power Transistor TPV597 . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.


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    PDF TPV597 -58dBIMD TV05001 TPV597

    Untitled

    Abstract: No abstract text available
    Text: THS4509 www.ti.com SLOS454 – JANUARY 2005 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER • • • • • • • • • • • Fully Differential Architecture Centered Input Common-mode Range Minimum Gain of 2V/V 6 dB Bandwidth: 1900 MHz (100 mVpp, G = 10 dB,


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    PDF THS4509 SLOS454

    Untitled

    Abstract: No abstract text available
    Text: THS4509 www.ti.com SLOS454B – JANUARY 2005 – REVISED JANUARY 2006 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER FEATURES • • • • • • • • • • • • • • • DESCRIPTION Fully Differential Architecture Centered Input Common-mode Range


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    PDF THS4509 SLOS454B THS4509

    SLOA054

    Abstract: ADS5500 SLMA002 SLMA004 THS4509 THS4509RGTR THS4509RGTT
    Text: THS4509 www.ti.com SLOS454 – JANUARY 2005 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER • • • • • • • • • • • Fully Differential Architecture Centered Input Common-mode Range Minimum Gain of 2V/V 6 dB Bandwidth: 1900 MHz (100 mVpp, G = 10 dB,


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    PDF THS4509 SLOS454 SLOA054 ADS5500 SLMA002 SLMA004 THS4509 THS4509RGTR THS4509RGTT

    opamp ic single powersupply

    Abstract: ADS5500 SLMA002 THS4508 THS4509 THS4509RGTR THS4509RGTT THS4511 THS4513 SLOA054
    Text: THS4509 www.ti.com SLOS454D – JANUARY 2005 – REVISED FEBRUARY 2007 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER FEATURES • • • • • • • • • • • • • • • DESCRIPTION Fully Differential Architecture Centered Input Common-mode Range


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    PDF THS4509 SLOS454D opamp ic single powersupply ADS5500 SLMA002 THS4508 THS4509 THS4509RGTR THS4509RGTT THS4511 THS4513 SLOA054

    Untitled

    Abstract: No abstract text available
    Text: THS4509 www.ti.com SLOS454B – JANUARY 2005 – REVISED JANUARY 2006 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER FEATURES • • • • • • • • • • • • • • • DESCRIPTION Fully Differential Architecture Centered Input Common-mode Range


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    PDF THS4509 SLOS454B THS4509

    Untitled

    Abstract: No abstract text available
    Text: THS4509 www.ti.com SLOS454A – JANUARY 2005 – REVISED SEPTEMBER 2005 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER FEATURES • • • • • • • • • • • • • • • DESCRIPTION Fully Differential Architecture Centered Input Common-mode Range


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    PDF THS4509 SLOS454A THS4509

    ADS5500

    Abstract: SLMA002 SLMA004 SLOA054 THS4509 THS4509RGTR THS4509RGTT
    Text: THS4509 www.ti.com SLOS454 – JANUARY 2005 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER • • • • • • • • • • • Fully Differential Architecture Centered Input Common-mode Range Minimum Gain of 2V/V 6 dB Bandwidth: 1900 MHz (100 mVpp, G = 10 dB,


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    PDF THS4509 SLOS454 ADS5500 SLMA002 SLMA004 SLOA054 THS4509 THS4509RGTR THS4509RGTT

    ADS5500

    Abstract: SLMA002 SLMA004 SLOA054 THS4509 THS4509RGTR THS4509RGTT
    Text: THS4509 www.ti.com SLOS454 – JANUARY 2005 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER • • • • • • • • • • • Fully Differential Architecture Centered Input Common-mode Range Minimum Gain of 2V/V 6 dB Bandwidth: 1900 MHz (100 mVpp, G = 10 dB,


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    PDF THS4509 SLOS454 ADS5500 SLMA002 SLMA004 SLOA054 THS4509 THS4509RGTR THS4509RGTT

    SMD Transistors w27

    Abstract: ADS5500 QFN-16 THS4508 THS4509 THS4509RGTR THS4509RGTT THS4511 THS4513
    Text: THS4509 www.ti.com . SLOS454G – JANUARY 2005 – REVISED MAY 2008 WIDEBAND, LOW-NOISE, LOW DISTORTION, FULLY DIFFERENTIAL AMPLIFIER


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    PDF THS4509 SLOS454G SMD Transistors w27 ADS5500 QFN-16 THS4508 THS4509 THS4509RGTR THS4509RGTT THS4511 THS4513

    linear amplifier 470-860

    Abstract: SD1732 THU2600A-R
    Text: THU2600A-R 25 W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors with diffused emitter ballast resistors to enhance ruggedness and reliability. •


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    PDF THU2600A-R SD1732 GR00122 linear amplifier 470-860 THU2600A-R

    Untitled

    Abstract: No abstract text available
    Text: THS4509 www.ti.com . SLOS454G – JANUARY 2005 – REVISED MAY 2008 WIDEBAND, LOW-NOISE, LOW DISTORTION, FULLY DIFFERENTIAL AMPLIFIER


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    PDF THS4509 SLOS454G

    Untitled

    Abstract: No abstract text available
    Text: THS4509 www.ti.com . SLOS454G – JANUARY 2005 – REVISED MAY 2008 WIDEBAND, LOW-NOISE, LOW DISTORTION, FULLY DIFFERENTIAL AMPLIFIER


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    PDF THS4509 SLOS454G

    SLOA054

    Abstract: ADS5500 SLMA002 SLMA004 THS4509 THS4509RGTR THS4509RGTT transformer 50 Hz RK73H1ETTP
    Text: THS4509 www.ti.com SLOS454 – JANUARY 2005 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER • • • • • • • • • • • Fully Differential Architecture Centered Input Common-mode Range Minimum Gain of 2V/V 6 dB Bandwidth: 1900 MHz (100 mVpp, G = 10 dB,


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    PDF THS4509 SLOS454 SLOA054 ADS5500 SLMA002 SLMA004 THS4509 THS4509RGTR THS4509RGTT transformer 50 Hz RK73H1ETTP

    ADS5500

    Abstract: SLMA002 SLMA004 SLOA054 THS4509 THS4509QRGTRQ1
    Text: THS4509-Q1 www.ti.com. SLOS547 – NOVEMBER 2008 WIDEBAND LOW-NOISE LOW-DISTORTION FULLY DIFFERENTIAL AMPLIFIER


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    PDF THS4509-Q1 SLOS547 ADS5500 SLMA002 SLMA004 SLOA054 THS4509 THS4509QRGTRQ1

    Untitled

    Abstract: No abstract text available
    Text: THS4509 www.ti.com SLOS454F – JANUARY 2005 – REVISED OCTOBER 2007 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • 1 Fully Differential Architecture Centered Input Common-mode Range


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    PDF THS4509 SLOS454F THS4508

    SLOS454H

    Abstract: Transformer ADT2-1T ADS5500 QFN-16 THS4508 THS4509 THS4509RGTR THS4509RGTT THS4511 THS4513
    Text: THS4509 www.ti.com SLOS454H – JANUARY 2005 – REVISED NOVEMBER 2009 WIDEBAND, LOW-NOISE, LOW-DISTORTION, FULLY-DIFFERENTIAL AMPLIFIER Check for Samples: THS4509 FEATURES 1 • • • • • • • • • • • • • • 23 DESCRIPTION Fully-Differential Architecture


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    PDF THS4509 SLOS454H THS4509 SLOS454H Transformer ADT2-1T ADS5500 QFN-16 THS4508 THS4509RGTR THS4509RGTT THS4511 THS4513

    IMD2 transistor

    Abstract: No abstract text available
    Text: ROHM CO LTD HOE D l & Z & W • QQ0b3&7 N y > v 'X £ /Transistors IMD2 1 BHRHM IMD2 - " O M —£ — " " T '-" — . 11 ' ■ J Z V 3 - 9 0 M /inverter Driver Isolated Mini-Mold Device • i'Hfé'tfSSEI/Dlme.nslons Unit : mm 1) SM T (S C -59) ¿ | g ] - f t « f C


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    PDF SC-59) 22kfl 22kil IMD2 transistor

    IMD2 transistor

    Abstract: BHRH
    Text: ROHM CO LTD HOE D • l&Z&W QQ0b3&7 1 BHRHM N y > v 'X £ /Transistors IMD2 - " IMD2 O M —£ — " " T '-" — . 11 ' ■ J Z V 3 - 9 0 M /inverter Driver Isolated Mini-Mold Device • i'Hfé'tfSSEI/Dlme.nslons Unit : mm 1) SM T (S C -59) ¿ | g ] - f t « f C


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    PDF SC-59) IMD2 transistor BHRH

    Untitled

    Abstract: No abstract text available
    Text: IMD2 /T ra n s is to rs IM D2 7 < V U — ~t ~ " j K $ — " E — J U K ~ f / ’v / X •i >/'v — *1 F y ' f /Vlnverter Driver Isolated Mini-Mold Device V r > J V ; V d i- r 1 1 SMT SC-59) < t( s ) - W S C 2f@C7) h A'"A T i ' -5 o -3 2) U, f £ 7 '< f c - 5 0


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    PDF SC-59)

    DIN45004B

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line CA922 CA922A VHF/UHF CATV A m plifiers Designed for broadband applications requiring low-distortion and high output capability. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion-implanted arsenic emitter transistors and an all gold


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    PDF DIN45004B CA922A) CA922 CA922A CA922A DIN45004B

    DIN45004B

    Abstract: DIN-45004B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line CA912 CA912A VHF/UHF CATV Am plifier . . . designed for broadband applications requiring low -d isto rtio n and high output capability. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion-im planted arsenic em itter transistors and an all


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    PDF DIN45004B CA912 CA912A CA912A DIN45004B 714P-03, DIN-45004B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line CA901 CA901A VHF/UHF CATV Amplifiers . . . designed for broadband applications requiring low-distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion-implanted arsenic emitter transistors and an all gold metal system.


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    PDF DIN45004B CA901 CA901A CA901A

    IMD2 transistor

    Abstract: 470-860 mhz Power amplifier w
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity.


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    PDF TPV596A IMD2 transistor 470-860 mhz Power amplifier w