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Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1214L250 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with	Original	ILD1214L250 ILD1214L250 ILD1214L250-REV-NC-DS-REV-A	PDF

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Text: Part Number: Integra ILD1214L250 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with

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ILD1214L250 ILD1214L250 ILD1214L250-REV-NC-DS-REV-A

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