marcon/capacitor Marcon
Abstract: IC VS 1307 photo glucose D01608C-103 f11b marking LTIB if transformer 455khz tokin 1E105ZY5U GRM235Y5V105Z01 GRM235Y5V106Z01
Text: LT1307/LT1307B Single Cell Micropower 600kHz PWM DC/DC Converters U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Uses Small Ceramic Capacitors 50µA Quiescent Current LT1307 1mA Quiescent Current (LT1307B) Operates with VIN as Low as 1V
|
Original
|
PDF
|
LT1307/LT1307B
600kHz
LT1307)
LT1307B)
295mV
500mA
LT1307/LT1307B
marcon/capacitor Marcon
IC VS 1307
photo glucose
D01608C-103
f11b
marking LTIB
if transformer 455khz
tokin 1E105ZY5U
GRM235Y5V105Z01
GRM235Y5V106Z01
|
LTC1307
Abstract: BU 6197 D01608C-103 f11b if transformer 455khz murata 655KHz capacitor 47k 3kv Murata LQH3C100 LQH3C100K04 ERIE 3KV
Text: LT1307/LT1307B Single Cell Micropower 600kHz PWM DC/DC Converters U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Uses Small Ceramic Capacitors 50µA Quiescent Current LT1307 1mA Quiescent Current (LT1307B) Operates with VIN as Low as 1V
|
Original
|
PDF
|
LT1307/LT1307B
600kHz
LT1307)
LT1307B)
295mV
500mA
LT1307/LT1307B
LTC1307
BU 6197
D01608C-103
f11b
if transformer 455khz
murata 655KHz
capacitor 47k 3kv
Murata LQH3C100
LQH3C100K04
ERIE 3KV
|
Untitled
Abstract: No abstract text available
Text: TPS61158 www.ti.com SLVSBR3 – MAY 2013 30V WLED Driver with Integrated Power Diode Check for Samples: TPS61158 FEATURES DESCRIPTION • • • With 30V rated integrated switch FET and power diode, the TPS61158 is a boost converter that drives LEDs in series. The boost converter runs at 750kHz
|
Original
|
PDF
|
TPS61158
TPS61158
750kHz
750kHz
|
Untitled
Abstract: No abstract text available
Text: LT1307/LT1307B Single Cell Micropower 600kHz PWM DC/DC Converters FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Uses Small Ceramic Capacitors 50µA Quiescent Current LT1307 1mA Quiescent Current (LT1307B) Operates with VIN as Low as 1V
|
Original
|
PDF
|
LT1307/LT1307B
600kHz
LT1307)
LT1307B)
295mV
500mA
LT1307/LT1307B
|
Untitled
Abstract: No abstract text available
Text: TPS61158 www.ti.com SLVSBR3 – MAY 2013 30V WLED Driver with Integrated Power Diode Check for Samples: TPS61158 FEATURES DESCRIPTION • • • With 30V rated integrated switch FET and power diode, the TPS61158 is a boost converter that drives LEDs in series. The boost converter runs at 750kHz
|
Original
|
PDF
|
TPS61158
750kHz
TPS61158
|
MA3232
Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
PDF
|
BVCBO-100V
BVCE0-80V
BVEBO-15V
BVCBO-60V
BVCEO-40V
BVCB0-80V
BVCE0-60V
BVCB0-100V
MA3232
BF123
CA3036
FT4017
2n1613 replacement
A431
BF121
DIODE SJ 98
DM01B
|
transistor a640
Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
PDF
|
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor a640
transistor A608
2SC632
transistor 2sC632
2SC634
L14B
Pt-100W
CA3036
DM02B
FV918
|
transistor k1502
Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
|
OCR Scan
|
PDF
|
NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
transistor k1502
dr 25 germanium diode
DIODE 10N 40D
2N3379
CA3036
K1502
K1501
2N5513
darlington 12V 6.2A
P1029
|
DIODE SJ 98
Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
PDF
|
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
DIODE SJ 98
CA3036
silicon epitaxial mesa diode microwave switch
V405T
DARLINGTON 3A 100V npn array
2n1613 replacement
A431
MT726
MT869
MT995
|
transistor A431
Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12
|
OCR Scan
|
PDF
|
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
transistor A431
MA3232
UD1001
A431 transistor
FT4017
MT42a
20C26
DM01B
SAC42
L29a
|
A1381 transistor
Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
|
OCR Scan
|
PDF
|
NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
A1381 transistor
2N5036
CA3036
NF Amp NPN Silicon transistor TO-3
MA3232
20C26
2N5034 package
2N5035
L29a
2N5034
|
NS1000 n
Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
PDF
|
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
NS1000 n
CA3036
BVCEO-90V
2CY38
transistor A431
2n1613 replacement
A431
UD1001
NS1862
QD401-78
|
UD1001
Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
|
OCR Scan
|
PDF
|
NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
UD1001
FT4017
transistor A431
MA3232
CA3036
UC850
DM01B
DM02B
UC340
L0NA
|
2sa525
Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
|
OCR Scan
|
PDF
|
|