HZU-L Series
Abstract: zener mark code A2 zener diode marking 333 361 Zener diode marking zener diode 332
Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0100Z Rev.1.00 Jun.05.2003 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
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REJ03G0043-0100Z
HZU-L Series
zener mark code A2
zener diode marking 333
361 Zener diode marking
zener diode 332
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c2 zener renesas
Abstract: B2 Zener HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS24 HZS30
Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z Previous: ADE-208-120B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
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REJ03G0184-0300Z
ADE-208-120B)
c2 zener renesas
B2 Zener
HZS11
HZS12
HZS15
HZS16
HZS18
HZS20
HZS24
HZS30
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B2 Zener
Abstract: REJ03G0180-0300Z HZ2A1
Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0180-0300Z Previous: ADE-208-117B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized
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REJ03G0180-0300Z
ADE-208-117B)
DO-35
B2 Zener
REJ03G0180-0300Z
HZ2A1
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HZU30L-1
Abstract: Zener Diode B1 zener diode 332
Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0200Z Rev.2.00 Aug.18.2003 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
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REJ03G0043-0200Z
HZU30L-1
Zener Diode B1
zener diode 332
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HZ11
Abstract: HZ12 HZ15 HZ16 HZ20 HZ24 HZ30 HZ36 39b2
Text: HZ H Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0181-0100Z (Previous: ADE-208-794) Rev.1.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized
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REJ03G0181-0100Z
ADE-208-794)
DO-35
HZ11
HZ12
HZ15
HZ16
HZ20
HZ24
HZ30
HZ36
39b2
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GRZZ0002ZB-A
Abstract: HZ11 HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ11B
Text: HZ Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0180-0400 Rev.4.00 Jul 03, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.
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REJ03G0180-0400
DO-35
GRZZ0002ZB-A
GRZZ0002ZB-A
HZ11
HZ12
HZ15
HZ16
HZ18
HZ20
HZ22
HZ24
HZ11B
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ZENER DIODE 1233
Abstract: GRZZ0002ZC-A HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS22 HZS24
Text: HZS Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0184-0400 Rev.4.00 Jul 06, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
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REJ03G0184-0400
GRZZ0002ZC-A
ZENER DIODE 1233
GRZZ0002ZC-A
HZS11
HZS12
HZS15
HZS16
HZS18
HZS20
HZS22
HZS24
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marking A3 Taiwan semiconductor
Abstract: B2 Zener Zener IT 243 REJ03G0043-0300Z a3 6 zener B1 5.6 zener B2 marking code Zener B1.66 A211-1
Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance.
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REJ03G0043-0300Z
marking A3 Taiwan semiconductor
B2 Zener
Zener IT 243
REJ03G0043-0300Z
a3 6 zener
B1 5.6 zener
B2 marking code Zener
B1.66
A211-1
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HZS7L diode
Abstract: HZS6A2L II A2 zener diode c2 zener renesas ADE-208-121A HZS11L BAY 87 diode HZS15L HZS16L HZS20L
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0166-0200Z Previous: ADE-208-121A Rev.2.00 Jan.06.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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REJ03G0166-0200Z
ADE-208-121A)
HZS7L diode
HZS6A2L
II A2 zener diode
c2 zener renesas
ADE-208-121A
HZS11L
BAY 87 diode
HZS15L
HZS16L
HZS20L
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SILICON PLANAR zener diode DO-35
Abstract: BAY 73 diode B2 Zener hz30 hz6a MARK b3 zener diode
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0182-0200Z Previous: ADE-208-118A Rev.2.00 Mar.11.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
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REJ03G0182-0200Z
ADE-208-118A)
DO-35
SILICON PLANAR zener diode DO-35
BAY 73 diode
B2 Zener
hz30
hz6a
MARK b3 zener diode
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LINEAR TECHNOLOGY mark code
Abstract: ADE-208-236C 4.7 B2 zener PTSP0002ZA-A
Text: HZU-LL Series Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise REJ03G1216-0400 Previous: ADE-208-236C Rev.4.00 Jul 08, 2005 Features • • • • Low noise voltage (approximately 1/3 to 1/10 lower than the HZU series). Temperature coefficient is approximately 1/2 lower than the HZU series.
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REJ03G1216-0400
ADE-208-236C)
PTSP0002ZA-A
LINEAR TECHNOLOGY mark code
ADE-208-236C
4.7 B2 zener
PTSP0002ZA-A
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PTSP0002ZA-A
Abstract: hzu6.2z
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1218-0200 Previous: ADE-208-581A Rev.2.00 Jun 16, 2005 Features • Low capacitance (C = 8.5 pF max) and can protect signal line from ESD. • Ultra small Resin Package (URP) is suitable for surface mount design.
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REJ03G1218-0200
ADE-208-581A)
PTSP0002ZA-A
Unit2607
PTSP0002ZA-A
hzu6.2z
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mark 68m
Abstract: HZM6.8MFA
Text: HZM6.8MFA Silicon Planar Zener Diode for Surge Absorb REJ03G1209-0200 Previous: ADE-208-833A Rev.2.00 Jun 13, 2005 Features • HZM6.8MFA has four devices in a monolithic, and can absorb surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
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REJ03G1209-0200
ADE-208-833A)
PLSP0005ZC-A
S5-900
Unit2607
mark 68m
HZM6.8MFA
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PTSP0002ZA-A
Abstract: zener mark code A2
Text: HZU5.6Z Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1217-0200 Previous: ADE-208-795A Rev.2.00 Jun 16, 2005 Features • Low capacitance (C = 8.5 pF max) and can protect signal line from ESD. • Ultra small Resin Package (URP) is suitable for surface mount design.
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REJ03G1217-0200
ADE-208-795A)
PTSP0002ZA-A
Unit2607
PTSP0002ZA-A
zener mark code A2
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HZM27FA
Abstract: No abstract text available
Text: HZM27FA Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1213-0400 Previous: ADE-208-443C Rev.4.00 Jun 14, 2005 Features • HZM27FA has four devices, and can absorb surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
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HZM27FA
REJ03G1213-0400
ADE-208-443C)
HZM27FA
HM27FA
PLSP0005ZC-A
Sy5-900
Unit2607
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HZU10G
Abstract: HZU12G PTSP0002ZA-A zener mark code A2
Text: HZU-G Series Silicon Planar Zener Diode for Surge Absorption REJ03G1215-0300 Rev.3.00 Jun 08, 2006 Features • Zener diode for surge absorption suitable for IEC 1000-4-2. • Ultra small Resin Package URP is suitable for surface mount design. Ordering Information
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REJ03G1215-0300
PTSP0002ZA-A
HZU10G
HZU12G
PTSP0002ZA-A
zener mark code A2
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6G zener diode
Abstract: HZU8.2G HZU10G HZU12G PTSP0002ZA-A ADE-208-617
Text: HZU-G Series Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1205-0200 Previous: ADE-208-617A Rev.2.00 Sep 14, 2005 Features • Zener diode for surge absorb suitable for IEC 1000-4-2 and 5 to 10V products are available. • Ultra small Resin Package (URP) is suitable for surface mount design.
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REJ03G1205-0200
ADE-208-617A)
PTSP0002ZA-A
6G zener diode
HZU8.2G
HZU10G
HZU12G
PTSP0002ZA-A
ADE-208-617
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Untitled
Abstract: No abstract text available
Text: HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb REJ03G1211-0300 Previous: ADE-208-783B Rev.3.00 Jun 14, 2005 Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 25 pF max) and can protect ESD of signal line.
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REJ03G1211-0300
ADE-208-783B)
PLSP0005ZC-A
Junc5-900
Unit2607
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ADE-208-796B
Abstract: No abstract text available
Text: HZM5.6ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1206-0300 Previous: ADE-208-796B Rev.3.00 Jun 03, 2005 Features • HZM5.6ZFA has four devices, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.
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REJ03G1206-0300
ADE-208-796B)
PLSP0005ZC-A
Junction5-900
Unit2607
ADE-208-796B
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HZB6.8MWA
Abstract: No abstract text available
Text: HZB6.8MWA Silicon Planar Zener Diode for Surge Absorb REJ03G1256-0200 Previous: ADE-208-971A Rev.2.00 Sep 13, 2005 Features • HZB6.8MWA has two devices in a monolithic, and can absorb surge. • CMPAK Package is suitable for high density surface mounting and high speed assembly.
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REJ03G1256-0200
ADE-208-971A)
PTSP0003ZB-A
-55ijing
HZB6.8MWA
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zener 5.1 B2
Abstract: zener 3.3 b2 HZ24-1 30 B2 zener Zener Diode C3 5 zener diode 2.7 b2 22 B2 zener c2 zener zener series hz
Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-117A Z Rev 1 November 1996 Features • Low leakage, low zener impedance and maximum power dissipation o f 500 mW are ideally suited for stabilized power supply, etc.
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ADE-208-117A
DO-35
DO-35
SC-48
zener 5.1 B2
zener 3.3 b2
HZ24-1
30 B2 zener
Zener Diode C3 5
zener diode 2.7 b2
22 B2 zener
c2 zener
zener series hz
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HZ7L
Abstract: HZ6L
Text: HZ-L Series Silicon Epitaxial Planar Zener Diodes for Low Noise Application Features Outline • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are
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OCR Scan
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DO-35_
180x1
HZ7L
HZ6L
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marking code 9c diode
Abstract: No abstract text available
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Dec. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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OCR Scan
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ADE-208-121A
HZS36-3L
DO-34
marking code 9c diode
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ZENER 232
Abstract: ZENER A4 zener Y4
Text: SOD-123 DEVICES continued Zener Diodes (continued) Cathode = Notch (Vp = 0.9 V Max. @ Ip = 10 mA for all types) continued ELECTRICAL CHARACTERISTICS (T a = 25°C unless otherwise noted<25>, (Vp = 0.9 V Max. @ Ip = 1 0 mA for all types) Zener Voltage VZ1 (Volts)
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OCR Scan
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OD-123
ZENER 232
ZENER A4
zener Y4
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