2sb834 mx
Abstract: mx 2sb834 IC LM317 CIRCUITS 2sd880 equivalent npn 400 v 1.5 a BUT11 2SA940 BD941 igo tv data sheet tip41 file type
Text: MX-MICROELECTRONICS TO-220 PACKAGE Applied widely for: • • • • TV,Av,power amplifiers power drive e.c.t. ac energy saving lights power amplifiers power switch and speedy circuits DC regulators of electronical devices and calcukators • Applied widely for TV,Av,power amplifiers power drive e.c.t. ac
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O-220
2SA940
2SC2073
2SD880
2SB834
2SD313
BD941
BD949
BD950
BU406
2sb834 mx
mx 2sb834
IC LM317 CIRCUITS
2sd880 equivalent
npn 400 v 1.5 a
BUT11
2SA940
BD941
igo tv
data sheet tip41 file type
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mx 2sb834
Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Text: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO
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O-220
2SA940
2SC2073
2SD880
2SB834
2SD313
BD941
BD949
BD950
BU406
mx 2sb834
2sb834 mx
LB125
2sa940 2sc2073
MJE13005
tip41c pins
tip127 data
REG lm317
IC LM317 DATA SHEET
2SC2073
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npn 8050 ecb
Abstract: 2n5401 2n3904 S8050 equivalent LB120 NPN S8550 S9011 npn M28S bc547 pnp Transistor S9013 BC558 ebc
Text: TO-92 PACKAGE MX MICROELECTRONICS ● Applied widely for AV,Fm,phones ,toys ,high&low frequency analogy amplifiers and controlers. ICBO TYPE NPN Ptot Ic VCBO VCEO ※ ICEO OR PNP ▲ mW (mA) VCES ICES VCB hFE fT PIN IC IB VCE IC *TPY (V) (mA) (MHZ) 123 100
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S9011
S9012
S9013
S9014
BC636
BC638
BC640
BF420
BF422
npn 8050 ecb
2n5401 2n3904
S8050 equivalent
LB120
NPN S8550
S9011 npn
M28S
bc547 pnp
Transistor S9013
BC558 ebc
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16PIN
Abstract: circuit power supply
Text: M Product Preview SMARTMOS R MPC17533 2 Channel H-Bridge Driver IC MPC17533 is a monolithic type SMOS5AP SMARTMOS IC built in 2 channel H-Bridge Driver constituted LDMOSFET, input section can be directly interfaced from the MCU. This IC can control 4 mode output function
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MPC17533
MPC17533
16PIN
circuit power supply
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16PIN
Abstract: MPC17533 OUT2B
Text: Freescale Semiconductor, Inc. M Product Preview SMARTMOS R MPC17533 Freescale Semiconductor, Inc. 2 Channel H-Bridge Driver IC MPC17533 is a monolithic type SMOS5AP SMARTMOS IC built in 2 channel H-Bridge Driver constituted LDMOSFET, input section can be directly interfaced from the MCU.
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MPC17533
MPC17533
16PIN
OUT2B
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scr 15 amps
Abstract: 20 AMPS SCR SWITCH SCR POWER SUPPLY philips TV power supply ecg scr hi speed ECG thyristor Gate Turn-off Thyristor to220 scr 25 amps ECG279A Philips ECG279A
Text: PHILIPS E C G INC S4E j> m tbS3q2fl 0GG721Û 1T2 H E C G Gate Turn-Off - SCR For TV Applications Package E C 6 Type ECG Z76 ECGZ79A Description/ Application Gate Turn O ff S C R Gate Turn O ff S C R VDR M Volts 1250 350 it r m s Am ps 5 'Surge (Amps) 80
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0GG721Ã
ECGZ76
ECGZ79A
SC-51
ECG230
ECG231
O-220
ECG5425
ECG308
ECG308P
scr 15 amps
20 AMPS SCR
SWITCH SCR POWER SUPPLY
philips TV power supply
ecg scr hi speed
ECG thyristor
Gate Turn-off Thyristor to220
scr 25 amps
ECG279A
Philips ECG279A
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BF420
Abstract: BF421 BF420 kec
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BF420 SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. FEATURES • High Voltage : Vceo>300V • Complementary to BF421. MAXIMUM RATINGS Ta=25°C
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BF420
BF421.
BF420
BF421
BF420 kec
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IGO tv circuit diagram
Abstract: No abstract text available
Text: L IN E A R M O NO LITHIC IN TEG RA TED C IR C U IT S IC’s For TV Electrical Characteristics Ta=25°C Type No. Function Maximum Ratings (Ta=25”C) Symbol Item Condition min. typ. max. Unit 10 14 20 mA 8 11 Sound M ultiplex Signal P rocessing C ircu it
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AN5820
300m\V
50mVrms
AN5820
AN582
AN5822
IGO tv circuit diagram
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Untitled
Abstract: No abstract text available
Text: D sTj.rurts a ?^îop*h£7aât'OEsàsHCF ?<*CX.aflC G.ÎCTS1C amSÎO* A#<J JS *QT T3 2^ «CA7^3 Qfi s£~*'yy^ *T*~Ti VI"7" ’*" x r Aj.’HüRirr qf *ou* q azera«:" ” 00 NÚ t S C a l£ 'ÒX ~ — •~t H G F E irï Cî_ 0 ,0 Uw « S- psi Ü g r£ lF §
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2M121A
Abstract: magnetron hitachi 2M121 magnetron 2m210-m1 HMR-100 hitachi 3284ps water flow meter
Text: TEST SPESIFICATIONS Type : 2M121A Description : Continuous Wave Magnetron for Microwave Ovens, 2450 MHz, Fixed Frequency. Absolute Maximum Ratings : Symbol Min. Max. Unit Note Filament Voltage Ef 4.2 5.0 V 8,9 Pre — heating Time tk — sec 8 Peak Anode Voltage
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2M121A
0ig079)
3284PS
HMR1001R
magnetron hitachi
2M121
magnetron 2m210-m1
HMR-100
hitachi 3284ps
water flow meter
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm D4SC6M OUTLINE 60V 4A Feature • Tj=150°C • • Tj=150°C P rrs m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating • Full Molded Main Use • Switching Regulator • DC/DC Z \ yj K - S • DC/DC Converter • m m . < f- a . o a ü î h
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aveii50H
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Untitled
Abstract: No abstract text available
Text: M 2 fV I$ C § T S & fY I! 140 C o m m e rc e D riv e W fo n tg o m e iy v ilte , PA 1893 6-10 13 Tel: 215) 631-9840 SD1536-8 RF & MiCROWAVE TRANSISTORS IFF/D ME APPLICATIONS DESIGNATED FOR HIGH POWER PULSE IFF, DM!'' TACAN 100 W ATTS (typ.) IFF 1030-1090M Hz
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SD1536-8
1030-1090M
1215MH?
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Untitled
Abstract: No abstract text available
Text: Advanced IR F W /I8 4 0 A P o w e r M O SFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ~ ■ Lower Input Capacitance lD = 8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current ; 10jiA (M ax.) @ VOS = 500V
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10jiA
32ing
IRFW/I840A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG200Q101 H T O SH IBA INTELLIGENT GTR M O D U LE M« • i ■ f ■ i ? n n SILICON N CHANN EL IGBT n i n i ■ n■ ■ HIGH PO W ER SWITCHING APPLICATIONS M O T O R CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.
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MIG200Q101
2-121A1A
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S2E12
Abstract: motor IG 2200 19 X 000 15 R skkt 40 12
Text: SEMIKRON Vrsm V rrm dvl V drm cft cr V 700 V Itr m s {maximum value for continuous operation) 125 A Itav (sin. 180; Teas = 78 °C) 80 A V/\is 600 900 800 1300 1200 1300 _ 500 SKKT 71/06 D SKKH 72/D6 D - 500 SKKT 71/08 D SKKT 72/08 D1) SKKH 71/08 D 500 SKKT 71/12 D
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72/D6
71/ecovered
S2E12
motor IG 2200 19 X 000 15 R
skkt 40 12
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IGO tv circuit diagram
Abstract: zn8g
Text: FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION ISSUE 2 - APRIL 1998 DEVICE DESCRIPTION ZNBG3110 ZNBG3111 These devices are un con ditio na lly stable over the full w orking tem perature w ith the FETs in place, subject to the inclusion o f the
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ZNBG3110/11
470pF
-WV10
100nF
100nFI
ZNBG3110
ZNBG3111
ZNBG3110Q20
ZNBG3111Q20
QSOP20
IGO tv circuit diagram
zn8g
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Untitled
Abstract: No abstract text available
Text: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling V dss = 55V RDS on = 0.040Q
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1276B
IRFZ34N
O-220
002473b
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Untitled
Abstract: No abstract text available
Text: International PD - 9.1242B |IQR|Rectifier IRF7307 PRELIMINARY HEXFET Power M OSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
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1242B
IRF7307
Flg22b.
4ASS452
D02tiS7M
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irfp3710
Abstract: RFPE30
Text: PD - 9.1490A International IOR Rectifier IRFP3710 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = "100V ^ D S o n = 0.025Î2
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IRFP3710
O-247
irfp3710
RFPE30
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AEG T60N 1200
Abstract: aeg thyristors AEG T 25 N 1100 T60N 600 AEG T 51 N 1200 irs 2110 T60N aeg tt AEG T 99 N 800 AEG tt 45 F 800
Text: 0029426 A E G öl CORP D E O D 2 ^ 2b □ODbO'lö D | T Typenreihe/Type range_ T60N 400* 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values U d rh,U rrm Periodische Vorwärts-und repetitive peak forward off-state
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2sc 1364 transistor
Abstract: LS 1316 0/2sc 1364 transistor
Text: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMS4G 2IM7219 JANTX2N7219 JANTXVSN7S1S N-CHANNEL [REF: MIL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International
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2IM7219
JANTX2N7219
MIL-S-19500/5S6]
IRFM240D
IRFM240U
O-254
MIL-S-19500
2sc 1364 transistor
LS 1316
0/2sc 1364 transistor
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2N7334
Abstract: IRFG110 JANTXV2N7334
Text: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]
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IRFG110
JANTXV2N7334
MIL-S-19500/5S7]
2N7334
I-207
JANTXV2N7334
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Untitled
Abstract: No abstract text available
Text: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an
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IRF7523D1
Rf7523d1
0D2B023
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IR 006
Abstract: IRF7521D1
Text: P D -9.1646 International lö R Rectifier • • • • • PRELIMINARY FETKY IRF7521D1 MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low Vp Schottky Rectifier Generation V T echnology Micro8 Footprint
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IRF7521D1
IR 006
IRF7521D1
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