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    Infineon Technologies AG IGC70T120T6RMX1SA3

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC70T120T6RMX1SA3)
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    Avnet Americas IGC70T120T6RMX1SA3 Waffle Pack 52
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    IGC70T120T6RM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IGC70T120T6RM Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 75.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: IGC70T120T6RM IGBT4 Medium Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium power modules C Applications: • medium power drives


    Original     		PDF IGC70T120T6RM L7673B,

    IGC70T120T6RM

    Abstract: No abstract text available
    Text: IGC70T120T6RM IGBT4 Medium Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium power modules C Applications: • medium power drives


    Original     		PDF IGC70T120T6RM L7673B, IGC70T120T6RM

    Untitled

    Abstract: No abstract text available
    Text: IGC70T120T6RM IGBT4 Medium Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium power modules C Applications: • medium power drives


    Original     		PDF IGC70T120T6RM L7673B,