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    Infineon Technologies AG IGC109T120T6RHX1SA

    Trans IGBT Chip N-CH 1.2KV DIE - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC109T120T6RHX1SA)
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    Avnet Americas IGC109T120T6RHX1SA Waffle Pack 33
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    IGC109T120T6RH Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IGC109T120T6RH Infineon Technologies IGBT Chips; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; Original PDF

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    Abstract: No abstract text available
    Text: IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC109T120T6 RH VCE ICn 1200V 110A This chip is used for: • medium / high power modules


    Original     		PDF IGC109T120T6RH IGC109T120T6 L7742A,

    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RH 1200V 110A This chip is used for: • medium / high power modules


    Original     		PDF IGC109T120T6RH IGC109T120T6RH L7742