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    Infineon Technologies AG IGC07T120T8LX1SA2

    IGBT 1200V 4A SAWN ON FOIL
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    IGC07T120T8L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGC07T120T8LX1SA2 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 4A SAWN ON FOIL Original PDF

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    l748

    Abstract: No abstract text available
    Text: IGC07T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		PDF IGC07T120T8L L7483V, L7483P, l748

    Untitled

    Abstract: No abstract text available
    Text: IGC07T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		PDF IGC07T120T8L L7483V, L7483P,

    Untitled

    Abstract: No abstract text available
    Text: IGC07T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		PDF IGC07T120T8L L7483V, L7483P,