Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IGBTS GUIDE Search Results

    IGBTS GUIDE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    IGBTS GUIDE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    the calculation of the power dissipation for the igbt and the inverse diode in circuits

    Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
    Text: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3


    Original     		PDF CH-5600 5SYA2053-02 the calculation of the power dissipation for the igbt and the inverse diode in circuits "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation

    STGIP3M25N60

    Abstract: SEMITOP3 STGW30NC120KD stgw100n160s dimmer STGF7NB60SL STGW40NC60KD STGW30NC60VD STGB10NB37LZT4 semikron ignition STGB35N35LZ-1
    Text: IGBTs Selection guide October 2007 www.st.com/igbt Low drop, standard speed IGBTs Part number STGB3NB60SDT4 STGD3NB60SDT4 STGD3NB60SD-1 STGF7NB60SL STGD7NB60SL STGP10NB60SFP STGF10NB60SD STGD7NB60ST4 STGB10NB60ST4 STGP10NB60S STGP10NB60SD STGF20NB60S STGW35NB60SD


    Original     		PDF STGB3NB60SDT4 STGD3NB60SDT4 STGD3NB60SD-1 STGF7NB60SL STGD7NB60SL STGP10NB60SFP STGF10NB60SD STGD7NB60ST4 STGB10NB60ST4 STGP10NB60S STGIP3M25N60 SEMITOP3 STGW30NC120KD stgw100n160s dimmer STGF7NB60SL STGW40NC60KD STGW30NC60VD STGB10NB37LZT4 semikron ignition STGB35N35LZ-1

    STGIP3M25N60

    Abstract: STGB10NB37LZT4 DPAK Internally Clamped Powermesh Igbt STGW40NC60WD STGIPS20K60 stgw38ih130d SEMITOP STGW40NC60KD STGW38IH130D2 HF IGBT
    Text: IGBTs Selection guide September 2009 www.st.com/igbt Low drop IGBTs switching frequency up to 1 kHz Part number Voltage VCES (V) STGD3NB60SDT4 Package DPAK STGD7NB60ST4 STGD3NB60SD-1 IPAK STGB3NB60SDT4 D2PAK STGB10NB60ST4 STGF7NB60SL STGP10NB60SFP 600 STGF10NB60SD


    Original     		PDF STGD3NB60SDT4 STGD7NB60ST4 STGD3NB60SD-1 STGB3NB60SDT4 STGB10NB60ST4 STGF7NB60SL STGP10NB60SFP STGF10NB60SD O-220FP STGP10NB60S STGIP3M25N60 STGB10NB37LZT4 DPAK Internally Clamped Powermesh Igbt STGW40NC60WD STGIPS20K60 stgw38ih130d SEMITOP STGW40NC60KD STGW38IH130D2 HF IGBT

    RURU8060

    Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
    Text: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers


    Original     		PDF FGS15N40L OT-227 HGT1N30N60A4D HGT1N40N60A4D O-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 RURU8060 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    FGB40N6S2

    Abstract: 40N6S2 FGH40N6S2 FGH50N6S2D FGP40N6S2 T125 TA49438
    Text: FGH40N6S2, FGP40N6S2, FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2, and FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with


    Original     		PDF FGH40N6S2, FGP40N6S2, FGB40N6S2 FGB40N6S2 100kHz 40N6S2 FGH40N6S2 FGH50N6S2D FGP40N6S2 T125 TA49438

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


    Original     		PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A

    30N6S2

    Abstract: FGB30N6S2 FGB30N6S2T FGH30N6S2 FGP30N6S2 FGP30N6S2D 1108a
    Text: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with


    Original     		PDF FGH30N6S2 FGP30N6S2 FGB30N6S2 FGH30N6S2, FGP30N6S2, FGB30N6S2 100kHz 200kHZ 30N6S2 FGB30N6S2T FGP30N6S2D 1108a

    Untitled

    Abstract: No abstract text available
    Text: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with


    Original     		PDF FGH30N6S2 FGP30N6S2 FGB30N6S2 FGH30N6S2, FGP30N6S2, FGB30N6S2 100kHz

    30N6S2

    Abstract: make full-bridge SMPS FGB30N6S2 FGH30N6S2 FGP30N6S2 FGP30N6S2D
    Text: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with


    Original     		PDF FGH30N6S2 FGP30N6S2 FGB30N6S2 FGH30N6S2, FGP30N6S2, FGB30N6S2 100kHz 30N6S2 make full-bridge SMPS FGP30N6S2D

    MOSFET IGBT THEORY AND APPLICATIONS

    Abstract: tv deflection theory PHILIPS MOSFET igbt BUK7508-55 equivalent SOT404 mosfet cross reference "Power Semiconductor" Philips igbt philips PHILIPS MOSFET PowerMos transistors TO220 package
    Text: DATA SHEET Introduction PowerMOS Transistors including TOPFETs and IGBTs 1996 Dec 12 Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Introduction therefore be identified easily as they have a 4 digit ‘type code’ after the BUK prefix.


    Original     		PDF BUK7508-55 MOSFET IGBT THEORY AND APPLICATIONS tv deflection theory PHILIPS MOSFET igbt BUK7508-55 equivalent SOT404 mosfet cross reference "Power Semiconductor" Philips igbt philips PHILIPS MOSFET PowerMos transistors TO220 package

    IRF9460

    Abstract: irfp460 ir2110 mosfet IRF450 IR2110 dc motor ir2110 class d amp ir2110 with calculations for 3 phase inverter ir2110 with calculations for inverter irfp460 inverter IR2110 buck Class d IR2110
    Text: Index INT990 Application Characterization of IGBTs HEXFRED is a trademark of International Rectifier Topics Covered: Gate drive for IGBTs Safe Operating Area Conduction losses Statistical models Switching losses Device selection and optimization Spreadsheets to calculate power losses and junction temperature


    Original     		PDF INT990 INT-983, IRF9460 irfp460 ir2110 mosfet IRF450 IR2110 dc motor ir2110 class d amp ir2110 with calculations for 3 phase inverter ir2110 with calculations for inverter irfp460 inverter IR2110 buck Class d IR2110

    MOSFET 4407

    Abstract: IRF9460 ir2110 class d amp irfp460 ir2110 AN-941 IRFP450 inverter irfp450 mosfet full bridge ir2110 with calculations for inverter full bridge ir2110 4407 mosfet
    Text: INT990 Application Characterization of IGBTs HEXFRED is a trademark of International Rectifier Topics Covered: Gate drive for IGBTs Safe Operating Area Conduction losses Statistical models Switching losses Device selection and optimization Spreadsheets to calculate power losses and junction temperature


    Original     		PDF INT990 INT-983, MOSFET 4407 IRF9460 ir2110 class d amp irfp460 ir2110 AN-941 IRFP450 inverter irfp450 mosfet full bridge ir2110 with calculations for inverter full bridge ir2110 4407 mosfet

    20N6S2D

    Abstract: FGP20N6S2D FGB20N6S2D FGB20N6S2DT FGH20N6S2D
    Text: FGH20N6S2D / FGP20N6S2D / FGB20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs


    Original     		PDF FGH20N6S2D FGP20N6S2D FGB20N6S2D FGP20N6S2D, FGB20N6S2D 100kHz 20N6S2D FGB20N6S2DT

    TB334

    Abstract: HGT1S12N60C3R HGT1S12N60C3RS HGTP12N60C3R LD26 RURP1560 TO-262AA Package equivalent
    Text: HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS 24A, 600V, Rugged, UFS Series N-Channel IGBTs December 1997 Features Description • 24A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		PDF HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS 150oC 250ns TB334 HGT1S12N60C3R HGT1S12N60C3RS HGTP12N60C3R LD26 RURP1560 TO-262AA Package equivalent

    20N60C3R

    Abstract: 20n60c3 20n60c n-channel, 75v, 80a hg*20n60 HGT1S20N60C3R HGT1S20N60C3RS HGT1S20N60C3RS9A HGTG20N60C3R HGTP20N60C3R
    Text: HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		PDF HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 150oC 330ns 20N60C3R 20n60c3 20n60c n-channel, 75v, 80a hg*20n60 HGT1S20N60C3R HGT1S20N60C3RS HGT1S20N60C3RS9A HGTG20N60C3R HGTP20N60C3R

    Untitled

    Abstract: No abstract text available
    Text: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with


    Original     		PDF FGH30N6S2 FGP30N6S2 FGB30N6S2 FGH30N6S2, FGP30N6S2, FGB30N6S2 100kHz

    30N6S2D

    Abstract: No abstract text available
    Text: FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs


    Original     		PDF FGH30N6S2D FGP30N6S2D FGB30N6S2D FGH30N6S2D, FGP30N6S2D, FGB30N6S2D 100kHz 30N6S2D

    30n6s2d

    Abstract: TA49336 FGB30N6S2D FGH30N6S2D FGP30N6S2D
    Text: FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs


    Original     		PDF FGH30N6S2D FGP30N6S2D FGB30N6S2D FGH30N6S2D, FGP30N6S2D, FGB30N6S2D 100kHz 30n6s2d TA49336

    Intersil ignition IGBT

    Abstract: 14N41 555 igbt driver HGT1S14N41G3VLT HGT1S14N41G3VLS HGTP14N41G3VL TB334
    Text: [ /Title HGT1 S14N4 1G3V LS, HGTP 14N41 G3VL /Subjec t (14A, 410V NChann el, Logic Level, Voltag e Clampi ng IGBTs ) /Autho r () /Keyw ords (14A, 410V NChann el, Logic Level, Voltag e Clampi ng IGBTs, HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2001


    Original     		PDF S14N4 14N41 HGT1S14N41G3VLS, HGTP14N41G3VL Intersil ignition IGBT 14N41 555 igbt driver HGT1S14N41G3VLT HGT1S14N41G3VLS HGTP14N41G3VL TB334

    calculation of IGBT snubber

    Abstract: abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB
    Text: New family of 4.5kV press-pack IGBTs. Positive development in power electronics New family of 4.5kV Press-pack IGBTs F. Wakeman, G. Li, A. Golland Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK Tel: +44 0 1249 441122, e-mail: frank.wakeman@westcode.com


    Original     		PDF EPE99, T0900TA52E calculation of IGBT snubber abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    Untitled

    Abstract: No abstract text available
    Text: SELECTION GUIDE page TOPFETs 10 PowerMOS transistors 10 IGBTs 16


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS 24A, 600V, Rugged, UFS Series N-Channel IGBTs December 1997 Description Features This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices


    OCR Scan     		PDF HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS 250ns 1-800-4-HARRIS