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    IGBT WIT FREQUENCY RANGE Search Results

    IGBT WIT FREQUENCY RANGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT WIT FREQUENCY RANGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    application of microprocessor in washing machine

    Abstract: DC SERVO MOTOR closed loop pwm speed control 3 phase inverter ic ir2136 closed loop control of servo motor in microcontroller IRMCK201 IRMCK201 IC circuit diagram ac motor servo control circuit diagram IRMCK202 drill motor speed control circuit C source code resolver speed motor
    Text: High Performance AC Drive by Single Chip Motion Control Engine IC Introduction of new breed of digital motion control IC :IRMCK201 and IRMCK203 Toshio Takahashi International Rectifier Director of Engineering Digital Control IC Design Center Abstract The IRMCK201 and IRMCK203 are new integrated


    Original     		PDF IRMCK201 IRMCK203 IRMCK203 application of microprocessor in washing machine DC SERVO MOTOR closed loop pwm speed control 3 phase inverter ic ir2136 closed loop control of servo motor in microcontroller IRMCK201 IC circuit diagram ac motor servo control circuit diagram IRMCK202 drill motor speed control circuit C source code resolver speed motor

    ST T4 3660

    Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
    Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits

    ST T4 3660

    Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
    Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in


    Original     		PDF 6781A IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking

    Untitled

    Abstract: No abstract text available
    Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in


    Original     		PDF 6781A IRG4PH40UD2-E 200kHz O-247AD

    irf 3250

    Abstract: ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410
    Text: PD - 94739 IRG4PH40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF IRG4PH40UD2 O-247AC irf 3250 ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410

    IGbt wit frequency range

    Abstract: t1624 035H IRFPE30
    Text: PD- 95188 IRG4PH40UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF IRG4PH40UDPbF O-247AC diodIRG4PH40UDPbF IRFPE30 IGbt wit frequency range t1624 035H IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: PD - 94623A IRGP35B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies


    Original     		PDF 4623A IRGP35B60PD IRFPE30 IRFPE30 O-247AC

    IRGP35B60PD

    Abstract: IRFP250 IRFPE30 035H 30ETH06 ci 22A marking code
    Text: PD - 94623 IRGP35B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies


    Original     		PDF IRGP35B60PD IRFPE30 O-247AC IRGP35B60PD IRFP250 IRFPE30 035H 30ETH06 ci 22A marking code

    035H

    Abstract: 8ETH06 IRFPE30 forward smps ic 200A 600V FET
    Text: PD - 95558 SMPS IGBT IRGP20B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free Equivalent MOSFET Parameters 


    Original     		PDF IRGP20B60PDPbF O-247AC IRFPE30 035H 8ETH06 IRFPE30 forward smps ic 200A 600V FET

    Untitled

    Abstract: No abstract text available
    Text: AY_D-1W & BY_D-1W SERIES 1W,FIXED INPUT, ISOLATED & UNREGULATED DUAL / SINGLE OUTPUT DC-DC CONVERTER RoHS FEATURES PRODUCT PROGRAM 12KVDC Isolation DIP Package Temperature Range: -40°C ~ +85°C No Heat sink Required No External Component Required Low isolation capacitance


    Original     		PDF 12KVDC AY1212D-1W BY1212D-1W 325mm

    035H

    Abstract: IRFPE30 IRGP4050PBF
    Text: PD-95743 IRGP4050PbF PDP Switch Features § § § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits


    Original     		PDF PD-95743 IRGP4050PbF O-247AC IRFPE30 035H IRFPE30 IRGP4050PBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF 96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD

    Untitled

    Abstract: No abstract text available
    Text: PD-95743 IRGP4050PbF PDP Switch Features § § § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits


    Original     		PDF PD-95743 IRGP4050PbF IRFPE30 IRFPE30 O-247AC

    igbt based welding machine

    Abstract: IRFR12
    Text: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A


    Original     		PDF IRG7RC07SDPbF 50/60Hz EIA-481 EIA-541. EIA-481. igbt based welding machine IRFR12

    Untitled

    Abstract: No abstract text available
    Text: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A


    Original     		PDF IRG7RC07SDPbF 50/60Hz EIA-481 EIA-541. EIA-481.

    irg7ph46

    Abstract: 600v 20a IGBT driver tr marking code 25h irg7ph46uep marking code 117A IRG7PH46UPBF 8200 T igbt driver applications
    Text: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF 6305A IRG7PH46UPbF IRG7PH46U-EP O-247AC O-247AD IRG7PH46NE irg7ph46 600v 20a IGBT driver tr marking code 25h irg7ph46uep marking code 117A 8200 T igbt driver applications

    irg7ph42upbf

    Abstract: marking code 5339
    Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF 96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD marking code 5339

    Untitled

    Abstract: No abstract text available
    Text: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF 6305A IRG7PH46UPbF IRG7PH46U-EP O-247AD

    Untitled

    Abstract: No abstract text available
    Text: PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC30UDPbF O-247AC IRFPE30

    irg7ph35upbf

    Abstract: IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A
    Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PH35UPbF IRG7PH35U-EP O-247AD irg7ph35upbf IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A

    transistor VCE 1000V

    Abstract: TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30
    Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC30UDPbF O-247AC IRFPE30 transistor VCE 1000V TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30

    035H

    Abstract: IRFPE30
    Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC30UDPbF O-247AC IRFPE30 035H IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: 38C5 Group REJ03B0028-0200 Rev.2.00 Nov 23, 2005 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION The 38C5 group is the 8-bit microcomputer based on the 740 family core technology. The 38C5 group has an LCD drive control circuit, an A/D converter, and a serial interface as additional functions.


    Original     		PDF REJ03B0028-0200

    Untitled

    Abstract: No abstract text available
    Text: PD- 95188A IRG4PH40UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF 5188A IRG4PH40UDPbF O-247AC IRFPE30