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    IGBT W 18 NK 80 Z Search Results

    IGBT W 18 NK 80 Z Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT W 18 NK 80 Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F4-50R12KS4

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F4-50R12KS4_B11


    Original     		PDF F4-50R12KS4

    F4-50R12KS4

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F4-50R12KS4_B11


    Original     		PDF F4-50R12KS4 BarcodeCode128

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F4-50R12KS4_B11


    Original     		PDF F4-50R12KS4

    F4-50R12KS4

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules F4-50R12KS4_B11 EconoPACK 2モジュール高周波スイッチング向け高速IGBT"and SiCダイオード内蔵andPressFIT/ NTCサーミスタ


    Original     		PDF F4-50R12KS4 BarcodeCode128

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS75R12KT4_B15


    Original     		PDF FS75R12KT4

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS75R12KT4_B11 EconoPACK 2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管 带有pressfit压接管脚和温度检测NTC


    Original     		PDF FS75R12KT4

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R12KT4_B11 EconoPACK 2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管 带有pressfit压接管脚和温度检测NTC


    Original     		PDF FS50R12KT4

    IGBT W 20 NK 50 Z

    Abstract: diode bridge LT 405 IRG4BC10UD IGBT W 15 NK 90 Z
    Text: PD -9.1677A IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC10UD O-220AB 140ns IGBT W 20 NK 50 Z diode bridge LT 405 IRG4BC10UD IGBT W 15 NK 90 Z

    IGBT W 20 NK 50 Z

    Abstract: IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC20FD
    Text: PD 9.1601 IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC20FD O-220AB IGBT W 20 NK 50 Z IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC20FD

    OZ828

    Abstract: IGBT W 20 NK 50 Z irg4ph40ud 15a 100v diode bridge diode lt 247 ir*40ud
    Text: PD 9.1621A IRG4PH40UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF IRG4PH40UD O-247AC OZ828 IGBT W 20 NK 50 Z irg4ph40ud 15a 100v diode bridge diode lt 247 ir*40ud

    IR 1838 T

    Abstract: IGBT W 20 NK 50 Z IRG4PH50UD
    Text: PD 9.1573 IRG4PH50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF IRG4PH50UD O-247AC IR 1838 T IGBT W 20 NK 50 Z IRG4PH50UD

    IRG4RC10UD

    Abstract: No abstract text available
    Text: PD 9.1571 IRG4RC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4RC10UD O-252AA 140ns IRG4RC10UD

    IGBT W 20 NK 50 Z

    Abstract: IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC30S
    Text: PD - 9.1593 IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30S O-220AB O-220AB IGBT W 20 NK 50 Z IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC30S

    Untitled

    Abstract: No abstract text available
    Text: Technical Information ModSTACK 6MS2400R17KE3-3G-C20VTIN Vorläufige Daten preliminary data Key data 3x 800A rms at 400V rms, forced air fan not implemented General information Stacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers and


    Original     		PDF 6MS2400R17KE3-3G-C20VTIN 3564E26. 1231423567896AB3C736DCEF32 4112BF3567896

    Untitled

    Abstract: No abstract text available
    Text: Technical Information ModSTACK 6MS2400R17KE3-3WCH-C20MVT Vorläufige Daten preliminary data Key data 3x 750A AC at 700V AC, water cooled General information for: Stacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers and


    Original     		PDF 6MS2400R17KE3-3WCH-C20MVT BBC35 1231423567896AB3C736DCEF32 4112BF3567896

    LTC4098-3.6

    Abstract: No abstract text available
    Text: Technical Information ModSTACK 6MS1600R17KE3-3WCH-C21VTIN Vorläufige Daten preliminary data Key data 3x 975A rms at 789V rms, water cooled General information Stacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers and


    Original     		PDF 6MS1600R17KE3-3WCH-C21VTIN BBC35 1231423567896AB3C736DCEF32 4112BF3567896 LTC4098-3.6

    Untitled

    Abstract: No abstract text available
    Text: Technical Information ModSTACK 6MS2400R17KE3-3WCH-C21VTIN Vorläufige Daten preliminary data Key data 3x 860A rms at 789V rms, water cooled General information Stacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers and


    Original     		PDF 6MS2400R17KE3-3WCH-C21VTIN BBC35 1231423567896AB3C736DCEF32 4112BF3567896

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    SMA2409M

    Abstract: spf 9001 sanken mn638s SPF0001 SPF3004 SPF3006 relay Re 04501 Ignition ICs SPF7211 ssd103
    Text: SANKEN ELECTRIC CO.,LTD. CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein


    Original     		PDF H1-C01ED0-0607020TA SMA2409M spf 9001 sanken mn638s SPF0001 SPF3004 SPF3006 relay Re 04501 Ignition ICs SPF7211 ssd103

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    MHPM7A20A60A

    Abstract: No abstract text available
    Text: MOTOROLA O rder this documents by M HPM 7A20A 60A/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule M H PM 7A20A60A Integrated Power Stage for 2.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A20E60DC3)


    OCR Scan     		PDF 7A20A MHPM7A20E60DC3) MHPM7A20A60A

    IRGPC40

    Abstract: No abstract text available
    Text: INTERNAT ION AL RECTIFIER 4055452 QGlübai 1 • 2bE D Data Sheet No. PD-9.665 t - 3 ^ - 0 3 INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC40 600V, 40A FEATURES 600V, 40A, TO-247AC IGBT International Rectifier's IRG series of Insulated Gate


    OCR Scan     		PDF IRGPC40 O-247AC S54S2 0G10b2S 001Qb2y IRGPC40

    Untitled

    Abstract: No abstract text available
    Text: r& T O K O TK75050 SMART MOSFET DRIVER FEATURES • 20 ns Rise and Fall Times into 1000 pF APPLICATIONS ■ 550 |iA Standby Current Consumption ■ Driving of Power MOSFETs and IGBTs ■ Undervoltage Lockout Combined with First Pulse ■ Switch Mode Power Supplies


    OCR Scan     		PDF TK75050 TK75050