Untitled
Abstract: No abstract text available
Text: V23990-P629-FXX-PM final data sheet V23990-P629-F54-01-14 flow0 Maximum Ratings / Höchstzulässige Werte Parameter Condition P629-F54 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage
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V23990-P629-FXX-PM
V23990-P629-F54-01-14
P629-F54
200V/25A
90-P629F54
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V23990-P629-F56-PM
Abstract: V23990-P629F
Text: V23990-P629-F56-PM final data sheet flow0 V23990-P629-F56-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition P629-F56 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage
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V23990-P629-F56-PM
V23990-P629-F56-01-14
P629-F56
200V/25A
V23990-P629F56
V23990-P629-F56-PM
V23990-P629F
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Untitled
Abstract: No abstract text available
Text: V23990-P629-FXX-PM final data sheet flow0 V23990-P629-F46-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition P629-F46 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage
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V23990-P629-FXX-PM
V23990-P629-F46-01-14
P629-F46
200V/25A
V23990-P629F46
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Untitled
Abstract: No abstract text available
Text: V23990-P629-F44-14-PM final data sheet flow0 Maximum Ratings / Höchstzulässige Werte Parameter Condition V23990-P629-F44-01-14 P629-F44 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage
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V23990-P629-F44-14-PM
V23990-P629-F44-01-14
P629-F44
200V/25A
V23990-P629F44
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SCHEMATIC 10kw POWER SUPPLY WITH IGBTS
Abstract: 100A/IGBT DRIVER SCHEMATIC schematic diagram UPS 10kw SCHEMATIC 100kw POWER SUPPLY WITH IGBTS schematic diagram UPS inverter 1kv TD350 FP50R12KE3 schematic diagram 24v UPS AN1944 schematic diagram UPS inverter
Text: AN1944 Application note Developing IGBT applications using an TD350 advanced IGBT driver Introduction The TD350 is an advanced Insulated Gate Bipolar Transistor IGBT driver with integrated control and protection functions. The TD350 is especially adapted for driving 1200V IGBTs
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AN1944
TD350
SCHEMATIC 10kw POWER SUPPLY WITH IGBTS
100A/IGBT DRIVER SCHEMATIC
schematic diagram UPS 10kw
SCHEMATIC 100kw POWER SUPPLY WITH IGBTS
schematic diagram UPS inverter 1kv
FP50R12KE3
schematic diagram 24v UPS
AN1944
schematic diagram UPS inverter
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT DESCRIPTION 1 The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation
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UG25N120
UG25N120
O-220
O-247
QW-R203-050
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D-10
Abstract: IRGPH50FD2
Text: Previous Datasheet Index Next Data Sheet PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 1200V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes
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IRGPH50FD2
10kHz)
O-247AC
C-300
D-10
IRGPH50FD2
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Untitled
Abstract: No abstract text available
Text: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)
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IRGP30B120KD-EP
O-247AD
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IR 1838 T
Abstract: 5C100A D-10 IRGPH50FD2
Text: PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 1200V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGPH50FD2
10kHz)
O-247AC
C-300
IR 1838 T
5C100A
D-10
IRGPH50FD2
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IRGPH50FD2
Abstract: D-10 5C100A
Text: PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 1200V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGPH50FD2
10kHz)
O-247AC
C-300
IRGPH50FD2
D-10
5C100A
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motor IG 2200 19 x 00 15 r
Abstract: 12v dc motor IG 2200 19
Text: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability
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IRGP30B120KD-E
O-247AD
O-247AD
motor IG 2200 19 x 00 15 r
12v dc motor IG 2200 19
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600V 25A Ultrafast Diode
Abstract: GE power diode IC OZ 9936 in 4436 Ir 900v 60a ir igbt 1200V 40A 035H IRGP30B120KD-E PW80 irgp30b120
Text: PD- 93818A IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 s Short Circuit Capability
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3818A
IRGP30B120KD-E
O-247AD
600V 25A Ultrafast Diode
GE power diode
IC OZ 9936
in 4436
Ir 900v 60a
ir igbt 1200V 40A
035H
IRGP30B120KD-E
PW80
irgp30b120
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I.C LA 3778
Abstract: transistor on 4436 IRGP30B120KD-E AK 2118 250 KD res transistor VCE 1000V 30A GE-5045
Text: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability
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IRGP30B120KD-E
O-247AD
I.C LA 3778
transistor on 4436
IRGP30B120KD-E
AK 2118
250 KD res
transistor VCE 1000V 30A
GE-5045
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RG105
Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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IRGP20B120UD-E
O-247AD
20KHz
RG105
ir igbt 1200V 10A
SS850
sa wf
IRGP20B120UD-E
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IRGPH50F
Abstract: No abstract text available
Text: PD - 9.761A IRGPH50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 1200V VCE(sat) ≤ 2.9V
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IRGPH50F
10kHz)
O-247AC
C-284
IRGPH50F
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IRGP20B120UD-E
Abstract: IGBT Transistor 1200V, 25A
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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IRGP20B120UD-E
O-247AD
20KHz
IRGP20B120UD-E
IGBT Transistor 1200V, 25A
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Transistor GE 44
Abstract: tyco igbt
Text: V23990-P188-A10 flow PIM 2, 1200V, 36A Version 0601 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichterbrücke Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung
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V23990-P188-A10
D81359
Transistor GE 44
tyco igbt
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morocco p3
Abstract: mosfet 1200V 40A IGBT Transistor 1200V, 25A mosfet 1200V 25A ir igbt 1200V 40A STTA2512P TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE IGBT Transistor 2.5a transistor marking p3 transistor P1 P 12
Text: STTA2512P TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS 25A VRRM 1200V trr typ 60ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA2512P
morocco p3
mosfet 1200V 40A
IGBT Transistor 1200V, 25A
mosfet 1200V 25A
ir igbt 1200V 40A
STTA2512P
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
IGBT Transistor 2.5a
transistor marking p3
transistor P1 P 12
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TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
Abstract: transistor C 2240
Text: STTA5012T V 1/2 TURBOS WITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF(AV) 25A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA5012T(V)1 STTA5012T(V)2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE
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STTA5012T
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
transistor C 2240
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100C
Abstract: EMP25P12B shunt resistor current motor
Text: Bulletin I27149 01/03 EMP25P12B PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology
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I27149
EMP25P12B
28Vtyp
76Vtyp
50ppm/
EMP25P12B
100C
shunt resistor current motor
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75RA-120
Abstract: IGBT Transistor 1200V, 25A UV diode 200 nm emitter
Text: 7MBP 75RA-120 IGBT IPM 1200V 6x75A+Chopper Intelligent Power Module R-Series n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter
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75RA-120
6x75A
75RA-120
IGBT Transistor 1200V, 25A
UV diode 200 nm emitter
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transistor c295
Abstract: No abstract text available
Text: bitemational pd-9.1120 jjjg Rectifier_IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features VCES= 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGPH50FD2
10kHz)
O-247AC
transistor c295
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transistor c295
Abstract: No abstract text available
Text: International H !Rectifier P D - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT V ces = 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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10kHz)
IRGPH50FD2
-247AC
C-299
O-247AC
C\300
transistor c295
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PDF
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Untitled
Abstract: No abstract text available
Text: r z 7 SCS-THOMSON LI OT iOûS 7#® 5 STTA5012T(V 112 ^ TURBOSWITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av ) 25A V rrm 1200V trr (typ) 65ns V f (max) 1.85 V STTA5012T(V)1 STTA5012T(V)2 FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE
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STTA5012T
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