Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IGBT T3 INFINEON Search Results

    IGBT T3 INFINEON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT T3 INFINEON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    infineon power cycling igbt3

    Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
    Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,


    Original     		PDF D-59581 200V-Trench- 1998-Kyoto 2003N 00V-IGBT³ 2004-N infineon power cycling igbt3 IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT igbt simulation IGBT2

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F3L75R12W1H3_B27 VorläufigeDaten/PreliminaryData J VCES = 1200V IC nom = 75A / ICRM = 150A TypischeAnwendungen • 3-Level-Applikationen • SolarAnwendungen TypicalApplications


    Original     		PDF F3L75R12W1H3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A TypischeAnwendungen • 3-Level-Applikationen • SolarAnwendungen TypicalApplications • 3-Level-Applications • SolarApplications


    Original     		PDF F3L75R12W1H3

    F3L80R12W1H3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F3L80R12W1H3_B11 VorläufigeDaten/PreliminaryData


    Original     		PDF F3L80R12W1H3 thinQHSiCSchottky-Diode600V

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A 典型应用 • 三电平应用 • 太阳能应用 TypicalApplications • 3-Level-Applications • SolarApplications 电气特性 • 低电感设计


    Original     		PDF F3L75R12W1H3

    Untitled

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A 一般応用 • 3レベル アプリケーション • ソーラーアプリケーション TypicalApplications


    Original     		PDF F3L75R12W1H3

    Untitled

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A 一般応用 • 3レベル アプリケーション • ソーラーアプリケーション TypicalApplications


    Original     		PDF F3L75R12W1H3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A TypischeAnwendungen • 3-Level-Applikationen • SolarAnwendungen TypicalApplications • 3-Level-Applications • SolarApplications


    Original     		PDF F3L75R12W1H3

    F3L80R12W1H3

    Abstract: E83335
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L80R12W1H3_B11 EasyPACK模块采用第二类中点钳位拓扑带有pressfit压接管脚和温度检测NTC 初步数据/PreliminaryData


    Original     		PDF F3L80R12W1H3 thinQH600V thinQHSiCSchottkydiode600V BarcodeCode128 E83335

    F3L80R12W1H3

    Abstract: igbt T3 infineon
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules F3L80R12W1H3_B11 EasyPACKモジュールニュートラル ポイント クランプ2トポロジー内蔵andPressFIT/NTCサーミスタ


    Original     		PDF F3L80R12W1H3 thinQHSiCdiode600V thinQHSiCSchottkydiode600V BarcodeCode128 igbt T3 infineon

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A 典型应用 • 三电平应用 • 太阳能应用 TypicalApplications • 3-Level-Applications • SolarApplications 电气特性 • 低电感设计


    Original     		PDF F3L75R12W1H3

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R12W1H3_B27 初步数据/PreliminaryData J VCES = 1200V IC nom = 75A / ICRM = 150A 典型应用 • 三电平应用 • 太阳能应用 TypicalApplications • 3-Level-Applications • SolarApplications


    Original     		PDF F3L75R12W1H3

    Untitled

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules F3L75R12W1H3_B27 暫定データ/PreliminaryData J VCES = 1200V IC nom = 75A / ICRM = 150A 一般応用 • 3レベル アプリケーション • ソーラーアプリケーション


    Original     		PDF F3L75R12W1H3

    Econo

    Abstract: TRI-PAC Econo PIM infineon igbt power solar inverter IGBT f4 The field stop IGBT FS IGBT igbt T3 infineon
    Text: Product Brief Main Features Easy & Econo Modules • ■ ■ ■ ■ THE EasyPIM /EasyPACK as well as the EconoPIM™/EconoPACK™ family were developed in order to have a cost effective compact design as well as simplified and reliable mounting. Therefore, Infineon offers an optimized


    Original     		PDF

    IGBT DRIVER SCHEMATIC chip

    Abstract: The field stop IGBT FS IGBT infineon igbt3 1200v IGBT3 infineon IGBT DRIVER SCHEMATIC AN2003-03 igbt3 rg EICEDRIVER 4kA IGBT IGBT CHIP 1700V
    Text: APPLICATION NOTE Seite 1 von 6 Datum:2003-04-08 AN-Nummer: AN2003-03 Switching behavior and optimal driving of IGBT3 modules 1. Chip Technology The IGBT chip of the third generation IGBT3 has a trench structure and combines the advantages of PT and NPT technologies thanks to an additional n-doped layer, known as the Field Stop (FS) layer, within the NPT


    Original     		PDF AN2003-03 2ED300C17-S IGBT DRIVER SCHEMATIC chip The field stop IGBT FS IGBT infineon igbt3 1200v IGBT3 infineon IGBT DRIVER SCHEMATIC AN2003-03 igbt3 rg EICEDRIVER 4kA IGBT IGBT CHIP 1700V

    ff450r12me3

    Abstract: C28T sod6 SOT23 transistor R2C t60403-d4615 C-EUC1206 IGBT DRIVER SCHEMATIC 2ED100E12 ge c30b IGBT DRIVER SCHEMATIC chip
    Text: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-11-02 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.


    Original     		PDF AN2008-02 2ED100E12-F2 6ED100E12-F2 AN2007-04, ff450r12me3 C28T sod6 SOT23 transistor R2C t60403-d4615 C-EUC1206 IGBT DRIVER SCHEMATIC 2ED100E12 ge c30b IGBT DRIVER SCHEMATIC chip

    VAC t60403

    Abstract: ff450r12me3 SOD323R T60403 IGBT DRIVER SCHEMATIC t60403-d4615 T60403-D4615-X054 2ED100E12 AN2007-04 IGBT DRIVER SCHEMATIC chip
    Text: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-10-07 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.


    Original     		PDF AN2008-02 2ED100E12-F2 6ED100E12-F2 AN2007-04, VAC t60403 ff450r12me3 SOD323R T60403 IGBT DRIVER SCHEMATIC t60403-d4615 T60403-D4615-X054 2ED100E12 AN2007-04 IGBT DRIVER SCHEMATIC chip

    AN2009-07

    Abstract: 1ED020I12-F IGBt driver 1ed020I12-F basic principle of ups system 1ED020I12F
    Text: Application Note, V1.0, August 2009 AN2009-07 M I P A Q s e r ve Module with adapted driver electronics Industrial Power Edition 2010-04-20 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2010. All Rights Reserved.


    Original     		PDF AN2009-07 AN2009-03 AN2009-07 1ED020I12-F IGBt driver 1ed020I12-F basic principle of ups system 1ED020I12F

    DT25N

    Abstract: No abstract text available
    Text: Power Module Design for an Ultra Efficient Three-Level Utility Grid Solar Inverter Michael Frisch, Vincotech GmbH, Email: Michael.Frisch@vincotech.com Temesi Ernö, Vincotech Kft., Email: Erno.Temesi@vincotech.com Abstract The race to achieve highest efficiency had engineers turning to innovative topologies and


    Original     		PDF 100kW, 100kW. DT25N

    Transistor C1173

    Abstract: L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161
    Text: HybridPACK Hybrid Kit for HybridPACK™1 Evaluation Kit for Applications with HybridPACK™1 Module Application Note V2.3, 2010-10-15 System Engineering Edition 2010-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF inR214 R0402 R0603 3314J Transistor C1173 L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161

    Untitled

    Abstract: No abstract text available
    Text: Power Module Design for an Ultra Efficient Three-Level Utility Grid Solar Inverter Michael Frisch, Vincotech GmbH, Email: Michael.Frisch@vincotech.com Temesi Ernö, Vincotech Kft., Email: Erno.Temesi@vincotech.com Abstract The race to achieve highest efficiency had engineers turning to innovative topologies and


    Original     		PDF 100kW, 100kW.

    ice3b0565g

    Abstract: ERNI rel 37 ANIP9931E erni rel 07 zener diode sod80 erni rel 14 Phycom 78045 IC 78045 CiPoS IKCS12F60AA
    Text: Preliminary Version 1.1, December 2007 Application Note AN-EVAL-IKCS12F60AA-1 CIPOS IKCS12F60AA Evaluation Board Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p t h i n k i n g CIPOS™ Evaluation Board with IKCS12F60AA


    Original     		PDF AN-EVAL-IKCS12F60AA-1 IKCS12F60AA IKCS12F60AA EVAL-IKCS12F60AA ice3b0565g ERNI rel 37 ANIP9931E erni rel 07 zener diode sod80 erni rel 14 Phycom 78045 IC 78045 CiPoS IKCS12F60AA

    IKCS12F60F2A

    Abstract: 1N4148 IKCS12F60F2C LM393 calculation of IGBT snubber
    Text: Application Note, V1.0, Feb. 2009 Control integrated Power System CIPOS R e f e r e n c e B o a r d f o r C I P O S TM IKCSxxF60F2x AN-CIPOS-Reference Board-4 Authors: Junbae Lee http://www.infineon.com/cipos Power Management & Drives Control integrated Power System (CIPOS™)


    Original     		PDF IKCSxxF60F2x IKCSxxF60F2C IKCSxxF60F2C IKCS12F60F2A, IKCS12F60F2C; IKCSxxF60B IKCS12F60F2A 1N4148 IKCS12F60F2C LM393 calculation of IGBT snubber

    transistor WL 431

    Abstract: IKCS12F60AA CiPoS IKCS12F60AA Comparator IC for shunt resistor 2N2222 LM393 Q1 2N2222 NPN calculation of IGBT snubber
    Text: Application Note, V1.0, Jun. 2008 Control integrated Power System CIPOS R e f e r e n c e B o a r d f o r C I P O S TM IKCS12F60AA AN-CIPOS-Reference Board-1 Authors: Junbae Lee http://www.infineon.com/cipos Power Management & Drives Control integrated Power System (CIPOS™)


    Original     		PDF IKCS12F60AA IKCS12F60AA, IKCS12F60AA; IKCS12F60AA transistor WL 431 CiPoS IKCS12F60AA Comparator IC for shunt resistor 2N2222 LM393 Q1 2N2222 NPN calculation of IGBT snubber