IKW40N120H3
Abstract: IKW40N60 30100 transistor IKW25N120H3 welding inverter IKW40N120T2 Induction Heating Resonant Inverter IGW40N120H3 IKW50N60T IKW40N60H3
Text: Discrete IGBT Selection Tree YES IGBT NO Single IGBT IGBT + Anti-Parallel Diode Soft Hard Diode Commutation Frequency Range 2 – 20 kHz TRENCHSTOP 20 – 100 kHz HighSpeed 2 – 20 kHz TRENCHSTOP™ Duopack 8 – 60 kHz RC series (monolythic) 2 – 20 kHz
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IGpccN60H3
IGpccN120H2
IGpccN120H3
IGpccN60T.
IGpccN100T
IGpccT120.
IGpccN120
IHpccN60T.
IHpccT60.
IHpccN90T
IKW40N120H3
IKW40N60
30100 transistor
IKW25N120H3
welding inverter
IKW40N120T2
Induction Heating Resonant Inverter
IGW40N120H3
IKW50N60T
IKW40N60H3
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IGBT parallel
Abstract: igbt IGBT manual IGBT TEST igbt-modules DATA SHEET OF IGBT what is fast IGBT transistor manual manual semiconductor igbtmodules
Text: N-Series IGBT-Modules / Application Manual CONTENT N-Series IGBT-Modules / Application Manual N-Series IGBT-Modules / Application Manual N-Series IGBT-Modules Application Manual page 1-1 N-Series IGBT-Modules Application Manual 1.1: Device Structure and Characterisitcs
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JB 71
Abstract: MB54
Text: Technische Information / technical information FD800R33KL2C-K_B5 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values " # $ $ " $ 0* 8 " + > = $ +,-. , ' *1 %& ' 2 )*
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FD800R33KL2C-K
JB 71
MB54
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FD800R33KL2C-K_B5 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values " # $ $ " $ 0* 8 " + > = $ +,-. , ' *1 %& ' 2 )*
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FD800R33KL2C-K
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MB54
Abstract: No abstract text available
Text: Technische Information / technical information FD800R33KL2C-K_B5 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values " # $ $ " $ 0* 8 " + > = $ +,-. , ' *1 %& ' 2 )*
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FD800R33KL2C-K
MB54
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FD800R33KF2C-K
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FD800R33KF2C-K Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ % $ 1 1 8 & $ > & 9 -./0 '. * 2 , '. * +, 3. 456
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FD800R33KF2C-K
FD800R33KF2C-K
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FD800R33KF2C-K
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FD800R33KF2C-K Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ % $ 1 1 8 & $ > & 9 -./0 '. * 2 , '. * +, 3. 456
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FD800R33KF2C-K
FD800R33KF2C-K
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PDF
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FD800R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ % $ 1 1 8 & $ > & 9 -./0 '. * 2 , '. * +, 3. 456 3.
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FD800R33KF2C
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FD800R33KF2C
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FD800R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ % $ 1 1 8 & $ > & 9 -./0 '. * 2 , '. * +, 3. 456 3.
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FD800R33KF2C
FD800R33KF2C
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FD800R33KF2C
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FD800R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ % $ 1 1 8 & $ > & 9 -./0 '. * 2 , '. * +, 3. 456 3.
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FD800R33KF2C
FD800R33KF2C
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FD800R33KF2C
Abstract: FD800R33KF2C-K
Text: Technische Information / technical information IGBT-Module IGBT-modules FD800R33KF2C-K Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ % $ 1 1 8 & $ > & 9 -./0 '. * 2 , '. * +, 3. 456
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FD800R33KF2C-K
FD800R33KF2C
FD800R33KF2C-K
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PDF
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FD800R33KF2C-K Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ % $ 1 1 8 & $ > & 9 -./0 '. * 2 , '. * +, 3. 456
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FD800R33KF2C-K
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FD800R33KF2C
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FD800R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ % $ 1 1 8 & $ > & 9 -./0 '. * 2 , '. * +, 3. 456 3.
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FD800R33KF2C
FD800R33KF2C
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Untitled
Abstract: No abstract text available
Text: IXA40RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling
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IXA40RG1200DHGLB
60747and
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2N120BND
Abstract: 12V 200A Relay MOSFET 1200v 3a HGT1S2N120BNDS HGT1S2N120BNDS9A HGTP2N120BND TB334
Text: HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120BND,
HGT1S2N120BNDS
HGTP2N120BND
HGT1S2N120BNDS
TA49312.
TA49056.
2N120BND
12V 200A Relay
MOSFET 1200v 3a
HGT1S2N120BNDS9A
TB334
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2N120BND
Abstract: 12V 200A Relay TC.. 12A MOSFET Drivers HGT1S2N120BNDS HGT1S2N120BNDS9A HGTP2N120BND TB334 ZENER DIODE 12V
Text: HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120BND,
HGT1S2N120BNDS
HGTP2N120BND
HGT1S2N120BNDS
TA49312.
TA49056.
2N120BND
12V 200A Relay
TC.. 12A MOSFET Drivers
HGT1S2N120BNDS9A
TB334
ZENER DIODE 12V
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Untitled
Abstract: No abstract text available
Text: IXA20RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling
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IXA20RG1200DHGLB
60747and
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PDF
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HGT1S2N120BNDS
Abstract: HGT1S2N120BNDS9A HGTP2N120BND TB334
Text: HGTP2N120BND, HGT1S2N120BNDS Data Sheet December 2001 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120BND,
HGT1S2N120BNDS
HGTP2N120BND
HGT1S2N120BNDS
TA49312.
TA49056.
HGT1S2N120BNDS9A
TB334
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1N120BND
Abstract: TB334 HGT1S1N120BNDS HGT1S1N120BNDS9A HGTP1N120BND RHRD4120
Text: HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120BND,
HGT1S1N120BNDS
HGTP1N120BND
HGT1S1N120BNDS
TA49316.
RHRD4120
TA49056)
1N120BND
TB334
HGT1S1N120BNDS9A
RHRD4120
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HGT1S1N120BNDS
Abstract: HGT1S1N120BNDS9A HGTP1N120BND RHRD4120 TB334
Text: HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120BND,
HGT1S1N120BNDS
HGTP1N120BND
HGT1S1N120BNDS
TA49316.
RHRD4120
TA49056)
HGT1S1N120BNDS9A
RHRD4120
TB334
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1n120cnd
Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334 1N120CN
Text: HGTP1N120CND, HGT1S1N120CNDS Data Sheet December 2001 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120CND,
HGT1S1N120CNDS
HGTP1N120CND
HGT1S1N120CNDS
TA49317.
RHRD4120
TA49056)
1n120cnd
HGT1S1N120CNDS9A
RHRD4120
TB334
1N120CN
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Untitled
Abstract: No abstract text available
Text: HGTP1N120CND, HGT1S1N120CNDS Semiconductor February 1999 Data Sheet 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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OCR Scan
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HGTP1N120CND,
HGT1S1N120CNDS
HGTP1N120CND
HGT1S1N120CNDS
TA49317.
RHRD4120
TA49056)
O-263AB
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PDF
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1N120CND
Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334
Text: HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120CND,
HGT1S1N120CNDS
HGTP1N120CND
HGT1S1N120CNDS
TA49317.
RHRD4120
TA49056)
1N120CND
HGT1S1N120CNDS9A
RHRD4120
TB334
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1N120CN
Abstract: 1N120CND GEM X 365 HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334
Text: HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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Original
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HGTP1N120CND,
HGT1S1N120CNDS
HGTP1N120CND
HGT1S1N120CNDS
TA49317.
RHRD4120
TA49056)
1N120CN
1N120CND
GEM X 365
HGT1S1N120CNDS9A
RHRD4120
TB334
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PDF
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