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    IGBT MODULE P11 Search Results

    IGBT MODULE P11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT MODULE P11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-04010R5 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-04010R5 MBM600E17D 000cycles)

    corrosion inhibitor

    Abstract: Hitachi DSA00281
    Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R2 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-10006-R2 MBM600F17D 000cycles) 50Hwhole corrosion inhibitor Hitachi DSA00281

    G15BB

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09025 R5 P1 MBN500H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-09025 MBN500H65E2 000cycles) G15BB

    Hitachi DSA00281

    Abstract: 30s1200
    Text: IGBT MODULE Spec.No.IGBT-SP-09025 R2 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-09025 MBN500H65E2 000cycles) Hitachi DSA00281 30s1200

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09025 R4 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-09025 MBN500H65E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09025 R3 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-09025 MBN500H65E2 000cycles)

    MBN1500E33E2

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08002 R7 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08002 MBN1500E33E2 000cycles) MBN1500E33E2

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R10 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08002 R6 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-08002 MBN1500E33E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R8 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles)

    IGBT 6500V

    Abstract: Hitachi DSA00281
    Text: IGBT MODULE Spec.No.IGBT-SP-09008 R7 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-09008 MBN750H65E2 000cycles) IGBT 6500V Hitachi DSA00281

    MBN3600E17F

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10024 R0 MBN3600E17F Preliminary Specification Silicon N-channel IGBT 1700V F version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT.  Low driving power: Low input capacitance advanced trench gate.


    Original     		PDF IGBT-SP-10024 MBN3600E17F MBN3600E17F

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12023 R3 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-12023 MBM250H33E3

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12023 R1 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-12023 MBM250H33E3

    skhi 24 r

    Abstract: No abstract text available
    Text: SKHI 21A R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions Values Units  % &)25$


    Original     		PDF

    2MBI400TB-060

    Abstract: ED-4701 2mbi400tb 2MBI400TB060
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI400TB-060 Spec. No. : MS5F 5293 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 '02 Y.Kobayashi Oct. 23 '02 T.Miyasaka K.Yamada T.Fujihira MS5F 5293 1 14 a b c H04-004-07 Revised Records Date Classification


    Original     		PDF 2MBI400TB-060 H04-004-07 P7/14) P11/14, H04-004-03 2MBI400TB-060 ED-4701 2mbi400tb 2MBI400TB060

    6MBI75UA-120

    Abstract: ED-4701 MT5F12959
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI75UA-120 Spec. No. : MS5F 5354 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 31 ’03 Y.Kobayashi Jan. 31 ’03 T.Miyasaka Jan.- 31- ’03 K.Yamada T.Fujihira MS5F 5354 a 1 13 H04-004-07 Revised Records


    Original     		PDF 6MBI75UA-120 H04-004-07 P4/13) P11/13) H04-004-06 6MBI75e H04-004-03 6MBI75UA-120 ED-4701 MT5F12959

    2MBI150U2A-060

    Abstract: ED-4701 M232 MT5F12959 2mbi150u2a
    Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI150U2A-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5615 MS5F 5615 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision


    Original     		PDF 2MBI150U2A-060 MS5F5615 H04-004-07b P4/13) P12/13, H04-004-06b H04-004-03a 2MBI150U2A-060 ED-4701 M232 MT5F12959 2mbi150u2a

    2MBI400U2B-060

    Abstract: ED-4701 M233 MT5F12959
    Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI400U2B-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5618 MS5F 5618 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision


    Original     		PDF 2MBI400U2B-060 MS5F5618 H04-004-07b P4/13) P12/13, H04-004-06b H04-004-03a 2MBI400U2B-060 ED-4701 M233 MT5F12959

    2MBI300U2B-060

    Abstract: ED-4701 M233 MS5F5617 MT5F12959
    Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI300U2B-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5617 MS5F 5617 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision


    Original     		PDF 2MBI300U2B-060 MS5F5617 H04-004-07b P4/13) P12/13, H04-004-06b H04-004-03a 2MBI300U2B-060 ED-4701 M233 MS5F5617 MT5F12959

    2MBI200U2A-060

    Abstract: ED-4701 M232 MT5F12959
    Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI200U2A-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5616 MS5F 5616 a 1 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision


    Original     		PDF 2MBI200U2A-060 MS5F5616 H04-004-07b P4/13) P12/13, H04-004-06b H04-004-03a 2MBI200U2A-060 ED-4701 M232 MT5F12959

    IGBT DRIVER SCHEMATIC 3 PHASE

    Abstract: No abstract text available
    Text: Reference Design Gate driver for M20XP E Power Modules GD-M20x for MNPC Modules Rev.6 Reference Design no.: RD_2013-06_001-v01 Table of Contents 1 In tr o d uc t i o n . 3


    Original     		PDF M20XP GD-M20x 001-v01 IGBT DRIVER SCHEMATIC 3 PHASE

    SKHI21A

    Abstract: MTBF IGBT SKHI 64 MTBF IGBT module SKHI21 SKHI22B Semidriver SKHI 64 SKHI22A SKHI24 SKM 200 APPLICATION
    Text: Absolute Maximum Ratings Symbol VS ViH IoutPEAK IoutAVmax VCE dv/dt VisolIO Visol12 RGonmin RGoffmin Qout/pulse Top Tstg Term Supply voltage prim. Input signal voltage High Output peak current Output average current (max.) Collector-Emitter voltage sense across


    Original     		PDF Visol12 SKHI21A MTBF IGBT SKHI 64 MTBF IGBT module SKHI21 SKHI22B Semidriver SKHI 64 SKHI22A SKHI24 SKM 200 APPLICATION