Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-04010R5 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-04010R5
MBM600E17D
000cycles)
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PDF
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Measurement of stray inductance for IGBT
Abstract: circuit diagram for igbt hitachi igbt igbt module p11
Text: IGBT MODULE Spec.No.IGBT-SP-04010R4 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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Original
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IGBT-SP-04010R4
MBM600E17D
000cycles)
Measurement of stray inductance for IGBT
circuit diagram for igbt
hitachi igbt
igbt module p11
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PDF
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corrosion inhibitor
Abstract: Hitachi DSA00281
Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R2 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.
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IGBT-SP-10006-R2
MBM600F17D
000cycles)
50Hwhole
corrosion inhibitor
Hitachi DSA00281
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PDF
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G15BB
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09025 R5 P1 MBN500H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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Original
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IGBT-SP-09025
MBN500H65E2
000cycles)
G15BB
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PDF
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Hitachi DSA00281
Abstract: 30s1200
Text: IGBT MODULE Spec.No.IGBT-SP-09025 R2 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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Original
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IGBT-SP-09025
MBN500H65E2
000cycles)
Hitachi DSA00281
30s1200
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09025 R4 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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Original
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IGBT-SP-09025
MBN500H65E2
000cycles)
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09025 R3 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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Original
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IGBT-SP-09025
MBN500H65E2
000cycles)
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PDF
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MBN1500E33E2
Abstract: ls290 MBN1500E33E nff 16-102 IC1500 GC 72
Text: IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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Original
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IGBT-SP-08002
MBN1500E33E2
000cycles)
MBN1500E33E2
ls290
MBN1500E33E
nff 16-102
IC1500
GC 72
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PDF
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MBN1500E33E2
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08002 R7 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08002
MBN1500E33E2
000cycles)
MBN1500E33E2
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09008 R10 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate.
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IGBT-SP-09008
MBN750H65E2
000cycles)
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08002 R6 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08002
MBN1500E33E2
000cycles)
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate.
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IGBT-SP-09008
MBN750H65E2
000cycles)
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09008 R8 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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Original
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IGBT-SP-09008
MBN750H65E2
000cycles)
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PDF
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IGBT 6500V
Abstract: Hitachi DSA00281
Text: IGBT MODULE Spec.No.IGBT-SP-09008 R7 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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Original
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IGBT-SP-09008
MBN750H65E2
000cycles)
IGBT 6500V
Hitachi DSA00281
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-12023 R3 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate.
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IGBT-SP-12023
MBM250H33E3
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PDF
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MBN750H65E2
Abstract: IGBT 6500V 09008
Text: IGBT MODULE Spec.No.IGBT-SP-09008 R6 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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Original
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IGBT-SP-09008
MBN750H65E2
000cycles)
MBN750H65E2
IGBT 6500V
09008
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-12023 R1 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-12023
MBM250H33E3
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PDF
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skhi 24 r
Abstract: No abstract text available
Text: SKHI 21A R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions Values Units % &)25$
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2MBI400TB-060
Abstract: ED-4701 2mbi400tb 2MBI400TB060
Text: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI400TB-060 Spec. No. : MS5F 5293 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 '02 Y.Kobayashi Oct. 23 '02 T.Miyasaka K.Yamada T.Fujihira MS5F 5293 1 14 a b c H04-004-07 Revised Records Date Classification
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2MBI400TB-060
H04-004-07
P7/14)
P11/14,
H04-004-03
2MBI400TB-060
ED-4701
2mbi400tb
2MBI400TB060
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PDF
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2MBI400TB-060
Abstract: ED-4701 5293
Text: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI400TB-060 Spec. No. : MS5F 5293 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 ’02 Y.Kobayashi T.Fujihira Oct. 23 ’02 T.Miyasaka K.Yamada MS5F 5293 a b 1 14 H04-004-07 Revised Records Date Classification
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2MBI400TB-060
H04-004-07
P7/14)
P11/14
H04-004-03
2MBI400TB-060
ED-4701
5293
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PDF
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6MBI75UA-120
Abstract: ED-4701 MT5F12959
Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI75UA-120 Spec. No. : MS5F 5354 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 31 ’03 Y.Kobayashi Jan. 31 ’03 T.Miyasaka Jan.- 31- ’03 K.Yamada T.Fujihira MS5F 5354 a 1 13 H04-004-07 Revised Records
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Original
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6MBI75UA-120
H04-004-07
P4/13)
P11/13)
H04-004-06
6MBI75e
H04-004-03
6MBI75UA-120
ED-4701
MT5F12959
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PDF
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2MBI150U2A-060
Abstract: ED-4701 M232 MT5F12959 2mbi150u2a
Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI150U2A-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5615 MS5F 5615 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision
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Original
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2MBI150U2A-060
MS5F5615
H04-004-07b
P4/13)
P12/13,
H04-004-06b
H04-004-03a
2MBI150U2A-060
ED-4701
M232
MT5F12959
2mbi150u2a
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PDF
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2MBI300U2B-060
Abstract: 30-.03 m ED-4701 M233 MS5F5617 MT5F12959 2MBI300
Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI300U2B-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5617 MS5F 5617 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision
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2MBI300U2B-060
MS5F5617
H04-004-07b
P4/13)
P12/13,
H04-004-06b
H04-004-03a
2MBI300U2B-060
30-.03 m
ED-4701
M233
MS5F5617
MT5F12959
2MBI300
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PDF
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2MBI400U2B-060
Abstract: ED-4701 M233 MT5F12959
Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI400U2B-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5618 MS5F 5618 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision
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Original
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2MBI400U2B-060
MS5F5618
H04-004-07b
P4/13)
P12/13,
H04-004-06b
H04-004-03a
2MBI400U2B-060
ED-4701
M233
MT5F12959
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PDF
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