Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FZ750R65KE3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications
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FZ750R65KE3
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD750S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications
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DD750S65K3
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FZ750R65KE3
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ750R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe
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FZ750R65KE3
Isolationseigenschaftenvon10
FZ750R65KE3
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DD750S65K3
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD750S65K3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe
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DD750S65K3
Isolationseigenschaftenvon10
60yprovideapplicationnotes.
DD750S65K3
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2T920
Abstract: BSM75GP60
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM75GP60
2T920
BSM75GP60
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2T920
Abstract: BSM75GP60
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM75GP60
DB-PIM-10
2T920
BSM75GP60
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transistor 600v
Abstract: FF150R12KS4
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF150R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FF150R12KS4
transistor 600v
FF150R12KS4
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FF150R12KS4
Abstract: igbt 150a 600v
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF150R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FF150R12KS4
FF150R12KS4
igbt 150a 600v
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BSM75GP60
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM75GP60
BSM75GP60
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PDF
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ff150r12ks4
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF150R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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FF150R12KS4
FF150R12KS4
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MBN1500E33E2
Abstract: ls290 MBN1500E33E nff 16-102 IC1500 GC 72
Text: IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08002
MBN1500E33E2
000cycles)
MBN1500E33E2
ls290
MBN1500E33E
nff 16-102
IC1500
GC 72
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Hitachi DSA00281
Abstract: 330nf 250 v
Text: IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-10002
MBN1500E33E3
000cycles)
Hitachi DSA00281
330nf 250 v
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-10002 R5 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate.
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IGBT-SP-10002
MBN1500E33E3
000cycles)
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PDF
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MBN1500E33E2
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08002 R7 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08002
MBN1500E33E2
000cycles)
MBN1500E33E2
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08002 R6 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08002
MBN1500E33E2
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate.
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IGBT-SP-09008
MBN750H65E2
000cycles)
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09008 R8 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-09008
MBN750H65E2
000cycles)
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ZTH 429E
Abstract: UC 493 igbt 1500A 249E-01
Text: Technische Information / technical information IGBT-Module IGBT-Modules FS35R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES
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FS35R12KE3
769E-02
345E-03
674E-02
333E-03
052E-01
820E-01
249E-01
429E-02
709E-01
ZTH 429E
UC 493
igbt 1500A
249E-01
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fs*r12ke3
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-Modules FS35R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES
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FS35R12KE3
fs*r12ke3
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nf-009
Abstract: circuit ntc-thermistor
Text: Technische Information / technical information IGBT-Module IGBT-Modules FS35R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES
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FS35R12KE3
769E-02
345E-03
674E-02
333E-03
052E-01
820E-01
249E-01
429E-02
709E-01
nf-009
circuit ntc-thermistor
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-Modules FS35R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES
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FS35R12KE3
769E-02
345E-03
674E-02
333E-03
052E-01
820E-01
249E-01
429E-02
709E-01
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FF150R12KE3
Abstract: FF150R12KE ff150r12ke3g zigbee interfacing with pc FF150
Text: Technische Information / technical information IGBT-Module IGBT-Modules FF150R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES
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FF150R12KE3
499E-02
601E-02
364E-03
187E-05
FF150R12KE3G
FF150R12KE
zigbee interfacing with pc
FF150
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Untitled
Abstract: No abstract text available
Text: @ M ITEL GP400LSS16S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation DS4987 - 1.3 The GP400LSS16S is a single switch 1600V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the
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OCR Scan
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GP400LSS16S
DS4987
GP400LSS16S
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half bridge circuit diagram
Abstract: lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams GP200MHB12S UPS circuit diagram
Text: @ MITEL GP200MHB12S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4339 - 4.2 The GP200MHB12S is a single switch 1200V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the
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OCR Scan
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GP200MHB12S
DS4339
GP200MHB12S
half bridge circuit diagram
lc 6231
ge traction motor
12v dc to 220a cv inverter circuits diagrams
UPS circuit diagram
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