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    IGBT IC 650 Search Results

    IGBT IC 650 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT IC 650 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)  IGBT IC=100A (Tc=25C)  IGBT tf=80ns typ.


    Original     		PDF ENA2308A NGTB30N60L2WG O-247-3L A2308-8/8

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE sat ;1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications


    Original     		PDF ENA2308B NGTB30N60L2WG A2308-8/8

    tlp250 application note

    Abstract: tlp250 tlp2501 TLP250 application igbt drive tlp250 TLP251
    Text: IGBT/Power MOSFET Gate Drive Photo-IC Couplers TLP250 INV /TLP250F(INV) NEW PRODUCT GUIDE IGBT / POWER MOSFET GATE DRIVE PHOTO-IC COUPLERS TLP250 (INV) / TLP250F (INV) The Toshiba TLP250 (INV) and TLP250F (INV) are 8-pin photocouplers designed exclusively for use in IGBT


    Original     		PDF TLP250 /TLP250F TLP250 TLP250F tlp250 application note tlp2501 TLP250 application igbt drive tlp250 TLP251

    FZ600R65KF2

    Abstract: IGBT 6500V
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ600R65KF2 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 600A / ICRM = 1200A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FZ600R65KF2 BarcodeCode128 FZ600R65KF2 IGBT 6500V

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FZ750R65KE3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FZ750R65KE3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD250S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF DD250S65K3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD500S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF DD500S65K3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD500S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF DD500S65K3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD750S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF DD750S65K3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FZ250R65KE3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FZ250R65KE3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FD250R65KE3-K hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FD250R65KE3-K

    FZ250R65KE3

    Abstract: FZ250R65 FZ250R
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ250R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ250R65KE3 Isolationseigenschaftenvon10 FZ250R65KE3 FZ250R65 FZ250R

    FZ750R65KE3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ750R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ750R65KE3 Isolationseigenschaftenvon10 FZ750R65KE3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ400R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 400A / ICRM = 800A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ400R65KE3 Isolationseigenschaftenvon10

    fz500r65ke3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ500R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ500R65KE3 Isolationseigenschaftenvon10 fz500r65ke3

    IRF 930

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD500S65K3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF DD500S65K3 Isolationseigenschaftenvon10 60yprovideapplicationnotes. IRF 930

    DD750S65K3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD750S65K3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF DD750S65K3 Isolationseigenschaftenvon10 60yprovideapplicationnotes. DD750S65K3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FD500R65KE3-K hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe • Traktionsumrichter


    Original     		PDF FD500R65KE3-K

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD250R65KE3-K hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FD250R65KE3-K Isolationseigenschaftenvon10

    DD250S

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD250S65K3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 250A / ICRM = 500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter


    Original     		PDF DD250S65K3 Isolationseigenschaftenvon10 600yprovideapplicationnotes. DD250S

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    Diode semikron 103

    Abstract: semikron IGBT semikron skiip 81 AN 15 T semikron IGBT circuit
    Text: SKiiP 12ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC MiniSKiiP 1 ICRM VGES Tj • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections


    Original     		PDF 12ACC12T4V10 12ACC12T4V10 E63532 Diode semikron 103 semikron IGBT semikron skiip 81 AN 15 T semikron IGBT circuit

    FD500R65KE3-K

    Abstract: IRF 930 FD500R65 FD500R
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD500R65KE3-K hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe


    Original     		PDF FD500R65KE3-K Isolationseigenschaftenvon10 FD500R65KE3-K IRF 930 FD500R65 FD500R