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    IGBT GATE Search Results

    IGBT GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    PS9505-AX Renesas Electronics Corporation IGBT Drive, , / Visit Renesas Electronics Corporation
    PS9307L-AX Renesas Electronics Corporation IGBT Drive, , / Visit Renesas Electronics Corporation

    IGBT GATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Insulated Gate Bipolar Transistors

    Abstract: igbt
    Text: SCSOA IGBT S-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated


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    Insulated Gate Bipolar Transistors

    Abstract: igbt transistors IGBT ixys igbt
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode 2000 IXYS All rights reserved B2 - 1


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    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


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    PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


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    PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    IGBT Guide

    Abstract: KA3160 IGBT gate drivers igbt KA3161 DIP8
    Text: Analog and Mixed Signal Products CD-ROM Selection Guide IGBT Gate Drivers Product Description Package Packing Code1 Suffix KA3160 IGBT gate driver with protection DIP-8 T KA3161 IGBT gate driver with protection DIP-8 T KA3162 IGBT gate driver with protection


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    PDF KA3160 KA3161 KA3162 IGBT Guide IGBT gate drivers igbt DIP8

    4mbi400vg

    Abstract: 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060
    Text: / 4MBI400VG-060R-50 IGBT Modules IGBT MODULE V series 600V / 400A / IGBT, RB-IGBT 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)


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    PDF 4MBI400VG-060R-50 4mbi400vg 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UA8316 Preliminary LINEAR INTEGRATED CIRCUIT IGBT GATE DRIVER „ DESCRIPTION Integrating IGBT gate drive circuits on a single chip, The UTC UA8316 is a dedicated IC and a high current can directly drive IGBT. „ FEATURES * A high current can directly drive IGBT


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    PDF UA8316 UA8316 -200mA UA8316L-G07-T UA8316G-G07-T QW-R122-010

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES  High speed low loss IGBT. Low-injection punch-through IGBT.  Low driving power due to low input capacitance MOS gate.  High speed low recovery loss diode.


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    PDF IGBT-SP-13012 P1/10 MBN800E33D-AX 000cycles)

    IGBT FF 300

    Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


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    FF400R17KF6CB2

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


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    FZ800R17KF6CB2

    Abstract: KF6C
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


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    FF400R17KF6CB2

    Abstract: IGBT FF 300 igbt ff 75 r
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


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    PDF FF400R17KF6CB2 FF400R17KF6CB2 IGBT FF 300 igbt ff 75 r

    FF400R17KF6CB2

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


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    eupec igbt

    Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


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    diode 1700v

    Abstract: FZ800R17KF6CB2
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values


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    IGBT parallel

    Abstract: igbt IGBT manual IGBT TEST igbt-modules DATA SHEET OF IGBT what is fast IGBT transistor manual manual semiconductor igbtmodules
    Text: N-Series IGBT-Modules / Application Manual CONTENT N-Series IGBT-Modules / Application Manual N-Series IGBT-Modules / Application Manual N-Series IGBT-Modules Application Manual page 1-1 N-Series IGBT-Modules Application Manual 1.1: Device Structure and Characterisitcs


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    CHMC IC

    Abstract: CHMC D8316 D8316 chmc LTAGE D831 chmc si1 chmc so2 si103
    Text: Silicore IGBT GATE DRIVER D8316 DESCRIPTION Outline Drawing D8316 is a dedicated IC integrating IGBT gate drive circuit on a sing le chip . A high cu rrent directly drives IGBT . FEATURE z Can directly control fro m a micro controller. z Can directly drive the IGBT gate using a high


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    PDF D8316 D8316 -200mA 5600pF V/50kHz CHMC IC CHMC D8316 chmc LTAGE D831 chmc si1 chmc so2 si103

    FP15R12W1T4

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FP15R12W1T4_B11 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage


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    PDF FP15R12W1T4

    FP10R12W1T4

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FP10R12W1T4_B11 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage


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    PDF FP10R12W1T4

    IGPT CIRCUIT

    Abstract: IGBT Gate Drive Optocoupler IGBT desaturation IC 3160 hcpl 3160 power electronic transistor IGPT HCPL-3160
    Text: H 2.0 Amp IGBT Gate Drive Optocoupler with Integrated Over-current Protection and Fault Feedback Preliminary Technical Data HCPL-3160 Features Description • Integrated IGBT Desaturation Protection • Integrated Optically Isolated IGBT Fault Status Feedback


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    PDF HCPL-3160 HCPL-3160 SO-16 IGPT CIRCUIT IGBT Gate Drive Optocoupler IGBT desaturation IC 3160 hcpl 3160 power electronic transistor IGPT

    IGBT Gate Drive Optocoupler

    Abstract: IGPT CIRCUIT controller for PWM with IGBT IGBT desaturation HCPL-3160 HCPL316
    Text: H 2.0 Amp IGBT Gate Drive Optocoupler with Integrated Over-current Protection and Fault Feedback Preliminary Technical Data HCPL-3160 Features Description • Integrated IGBT Desaturation Protection • Integrated Optically Isolated IGBT Fault Status Feedback


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    PDF HCPL-3160 HCPL-3160 SO-16 IGBT Gate Drive Optocoupler IGPT CIRCUIT controller for PWM with IGBT IGBT desaturation HCPL316

    Insulated Gate Bipolar Transistors

    Abstract: No abstract text available
    Text: n ix Y S HIPerFASÎ IGBT 0-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode 1 X Ki:


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    75-06A7T

    Abstract: Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T 30-06A7T transistor T 044
    Text: IGBT Modules - Sixpack configuration NPT IGBT Modules N P T IG B T = non-punch through insulated gate bipolar transistor; square R BSO A, short circuit rated 6-pack IG BT - Modules Fig. 81 ► New Type •W K/W Us A u T ,= 25°C IGBT mJ Tj = 125°C IGBT IGBT


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    PDF 30-06A7 30-06A7T 50-06A7 50-06A7T 75-06A7 75-06A7T 15-12A7 25-12A7 50-12E7 100-06A8 Bt 35 transistor transistor 81 110 w 85 100-12E8 MWI 15-12A7 25-12A7T transistor T 044

    diode 12A3

    Abstract: 7512a3
    Text: IGBT Modules NPT IGBT Modules NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated phase leg boost chopper buck chopper I single switch v*C 6Ç rt typ v œs V ► New A A Tc= 25°C IGBT Tc= 80°C IGBT 90 135 160


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    PDF page91-100 75-12A3 100-12A3 150-12A4 200-12A4 300-12A4 420-03S4 1000-03G4 40-06D 50-12E diode 12A3 7512a3