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    IGBT FZ 1600 R12 KF4 Search Results

    IGBT FZ 1600 R12 KF4 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT FZ 1600 R12 KF4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT FZ 1600 r12 kf4

    Abstract: FZ800R12KF4 4kA IGBT IGBT module FZ 600 R12 G1 TRANSISTOR IGBT FZ 600 R12
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be


    Original     		PDF A15/97 FZ800R12KF4 IGBT FZ 1600 r12 kf4 FZ800R12KF4 4kA IGBT IGBT module FZ 600 R12 G1 TRANSISTOR IGBT FZ 600 R12

    FZ800R12KF4

    Abstract: IGBT FZ 1200 r12 IGBT module FZ 600 R12 IGBT FZ 600 R12 G1 TRANSISTOR 800R12KF4 IGBT FZ 1600 r12 kf4 IGBT FZ 200
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be


    Original     		PDF A15/97 FZ800R12KF4 FZ800R12KF4 IGBT FZ 1200 r12 IGBT module FZ 600 R12 IGBT FZ 600 R12 G1 TRANSISTOR 800R12KF4 IGBT FZ 1600 r12 kf4 IGBT FZ 200

    FZ800R12KF4

    Abstract: 800A DC diode IGBT FZ 1600 r12 kf4 fZ80
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be


    Original     		PDF A15/97 FZ800R12KF4 800A DC diode IGBT FZ 1600 r12 kf4 fZ80

    IGBT FZ 1200 r12

    Abstract: FZ800R12KF4 fz 1200 r12 kf 4 1G18
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be


    Original     		PDF A15/97 IGBT FZ 1200 r12 FZ800R12KF4 fz 1200 r12 kf 4 1G18