7MBP25TEA120
Abstract: AC200V AC2500
Text: 7MBP25TEA120 1200V / 25A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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7MBP25TEA120
7MBP25TEA120
AC200V
AC2500
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7MBP50TEA120
Abstract: AC200V AC2500 zener diode 5v with reverse recovery time 1us
Text: 7MBP50TEA120 1200V / 50A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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7MBP50TEA120
7MBP50TEA120
AC200V
AC2500
zener diode 5v with reverse recovery time 1us
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di
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CM100E3U-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50E3U-24H MEDIUM POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di
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CM50E3U-24H
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CM75E3U-24H
Abstract: Mitsubishi Electric IGBT MODULES IGBT die mitsubishi MITSUBISHI IGBT VQE21 mitsubishi electric igbt module
Text: MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di
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CM75E3U-24H
-150A/
Mitsubishi Electric IGBT MODULES
IGBT die mitsubishi
MITSUBISHI IGBT
VQE21
mitsubishi electric igbt module
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50E3U-24H MEDIUM POWER SWITCHING USE INSULATED TYPE T q Measured Description: M itsubishi IGBT M odules are de signed fo r use in switching applica tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di
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CM50E3U-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM100DU-24H
-200A/
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100E3U-24H
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e signed fo r use in switching applica tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di
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CM100E3U-24H
-200A/
100E3U-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM50DU-24H
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FW 3.7
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e signed fo r use in switching applica tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di
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CM75E3U-24H
FW 3.7
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IRGRDN400M12
Abstract: LF400A
Text: Provisional Data Sheet PD-9.1204 IRGDDN400M12 ir g r d n 4Q0M12 goRjHecnner "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VŒ = 1200V lc = 400A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated
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IRGDDN400M12
4Q0M12
C-562
IRGRDN400M12
LF400A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE . . Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of one IGBT in a single configuration with a reverse-connected super
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CM1000HA-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de signed fo r use in sw itching a p p li cations. Each m odule consists of one IGBT in a single configuration w ith a reverse-connected s u pe r
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CM1000HA-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura tion with a reverse-connected su per-fast recovery free-wheel diode.
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CM300HA-24H
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CRD Diode B
Abstract: No abstract text available
Text: International ^Rectifier PM1161 IRGKIN075M12 "CHOPPER LOW SIDE SWITCH" IGBTINT-A-PAK Low conduction loss IGBT Low Side Switch V CE= 1200V lc = 7 5 A • Rugged Design •Simple gate-drive •Switching-Loss Rating Includes all "tail" losses •Short circuit rated
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IRGKIN075M12
C-506
CRD Diode B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura tion with a reverse-connected su per-fast recovery free-wheel diode.
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CM600HA-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module con sists of one IGBT in a single con figuration with a reverseconnected super-fast recovery
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CM200HA-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM150DY-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of two IGBTs in a half bridge configu ration with each transistor having
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CM75DY-24H
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diod m4
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching a pplications. Each m odule consists of one IGBT in a single co nfig ura tion w ith a reverse-connected super-fast recovery free-w heel diode.
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CM300HA-24H
diod m4
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor
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CM100TF-24H
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diode bridge LT 402
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de signed fo r use in sw itching a p p li cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each tran sistor
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CM100TF-24H
diode bridge LT 402
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of six IGBTs in a three phase bridge con figuration, with each transistor hav
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CM75TF-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co n fig u ra tion w ith a reverse-connected super-fast recovery free-w heel diode.
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CM600HA-24H
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