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    IGBT FW DIODE 1200V Search Results

    IGBT FW DIODE 1200V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    IGBT FW DIODE 1200V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7MBP25TEA120

    Abstract: AC200V AC2500
    Text: 7MBP25TEA120 1200V / 25A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		PDF 7MBP25TEA120 7MBP25TEA120 AC200V AC2500

    7MBP50TEA120

    Abstract: AC200V AC2500 zener diode 5v with reverse recovery time 1us
    Text: 7MBP50TEA120 1200V / 50A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection


    Original     		PDF 7MBP50TEA120 7MBP50TEA120 AC200V AC2500 zener diode 5v with reverse recovery time 1us

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di­


    OCR Scan     		PDF CM100E3U-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50E3U-24H MEDIUM POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di­


    OCR Scan     		PDF CM50E3U-24H

    CM75E3U-24H

    Abstract: Mitsubishi Electric IGBT MODULES IGBT die mitsubishi MITSUBISHI IGBT VQE21 mitsubishi electric igbt module
    Text: MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di­


    OCR Scan     		PDF CM75E3U-24H -150A/ Mitsubishi Electric IGBT MODULES IGBT die mitsubishi MITSUBISHI IGBT VQE21 mitsubishi electric igbt module

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50E3U-24H MEDIUM POWER SWITCHING USE INSULATED TYPE T q Measured Description: M itsubishi IGBT M odules are de­ signed fo r use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di­


    OCR Scan     		PDF CM50E3U-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM100DU-24H -200A/

    100E3U-24H

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e ­ signed fo r use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di­


    OCR Scan     		PDF CM100E3U-24H -200A/ 100E3U-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM50DU-24H

    FW 3.7

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e ­ signed fo r use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di­


    OCR Scan     		PDF CM75E3U-24H FW 3.7

    IRGRDN400M12

    Abstract: LF400A
    Text: Provisional Data Sheet PD-9.1204 IRGDDN400M12 ir g r d n 4Q0M12 goRjHecnner "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VŒ = 1200V lc = 400A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated


    OCR Scan     		PDF IRGDDN400M12 4Q0M12 C-562 IRGRDN400M12 LF400A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE . . Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of one IGBT in a single configuration with a reverse-connected super­


    OCR Scan     		PDF CM1000HA-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of one IGBT in a single configuration w ith a reverse-connected s u pe r­


    OCR Scan     		PDF CM1000HA-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM300HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.


    OCR Scan     		PDF CM300HA-24H

    CRD Diode B

    Abstract: No abstract text available
    Text: International ^Rectifier PM1161 IRGKIN075M12 "CHOPPER LOW SIDE SWITCH" IGBTINT-A-PAK Low conduction loss IGBT Low Side Switch V CE= 1200V lc = 7 5 A • Rugged Design •Simple gate-drive •Switching-Loss Rating Includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGKIN075M12 C-506 CRD Diode B

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.


    OCR Scan     		PDF CM600HA-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM200HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module con­ sists of one IGBT in a single con­ figuration with a reverseconnected super-fast recovery


    OCR Scan     		PDF CM200HA-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM150DY-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half bridge configu­ ration with each transistor having


    OCR Scan     		PDF CM75DY-24H

    diod m4

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM300HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching a pplications. Each m odule consists of one IGBT in a single co nfig ura ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.


    OCR Scan     		PDF CM300HA-24H diod m4

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


    OCR Scan     		PDF CM100TF-24H

    diode bridge LT 402

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each tran sistor


    OCR Scan     		PDF CM100TF-24H diode bridge LT 402

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge con­ figuration, with each transistor hav­


    OCR Scan     		PDF CM75TF-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co n fig u ra ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.


    OCR Scan     		PDF CM600HA-24H