TRANSISTOR D412 smd
Abstract: mosfet D414 d409 mosfet mosfet d413 TRANSISTOR D405 mosfet d408 D409 transistor D408 mosfet D404 mosfet D405 mosfet
Text: Freescale Semiconductor, Inc. 3-Phase Switched Reluctance High-Voltage Power Stage User’s Manual For More Information On This Product, Go to: www.freescale.com A G R E E M E N T Motorola Embedded Motion Control N O N - D I S C L O S U R E Freescale Semiconductor, Inc.
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switched reluctance motor IGBT
Abstract: HD-705-6 spra420 irf740 switching 3 phase motor driver power inverter schematic diagram irf740 3 hp 1500 rpm a.c. induction motor winding data emerson three phase dc motor driver service note switched reluctance motor parameter IGBT for switched reluctance motor fan motor winding formula
Text: Application Report SPRA600 - October 1999 A Variable-Speed Sensorless Drive System for Switched Reluctance Motors Stephen J. Fedigan, Ph.D. and Charles P. Cole DSPS Research and Development Center ABSTRACT With the advent of high-speed digital signal processors DSPs specialized for motion control
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SPRA600
switched reluctance motor IGBT
HD-705-6
spra420
irf740 switching 3 phase motor driver
power inverter schematic diagram irf740
3 hp 1500 rpm a.c. induction motor winding data
emerson three phase dc motor driver service note
switched reluctance motor parameter
IGBT for switched reluctance motor
fan motor winding formula
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SKM900GA12E4
Abstract: No abstract text available
Text: SKM900GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1305 A Tc = 80 °C 1003 A 900 A ICnom ICRM SEMITRANS 4 IGBT4 Modules SKM900GA12E4 tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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SKM900GA12E4
SKM900GA12E4
E63532
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Abstract: No abstract text available
Text: SKM900GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1305 A Tc = 80 °C 1003 A 900 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 2700 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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Abstract: No abstract text available
Text: SKM900GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1305 A Tc = 80 °C 1003 A 900 A ICnom ICRM SEMITRANS 4 IGBT4 Modules SKM900GA12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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switched reluctance motor IGBT
Abstract: IGBT for switched reluctance motor CALCULATION SemiSel 3.1 SKM400GB128D CALCULATION SemiSel switched reluctance motor semikron SKM400GB128D circuit diagram for switched reluctance motor for IGBT JUNCTION TEMPERATURE CALCULATION calculation of switching frequency of igbt inverter
Text: Application Note AN-8004 Revision: 00 Issue Date: 2008-05-21 Prepared by: Dr. Arendt Wintrich Key Words: SemiSel, Semiconductor Selection, Loss Calculation www.Semikron.com/Application/ Software release of SemiSel version 3.1 New semiconductor available . 1
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AN-8004
Rev00
switched reluctance motor IGBT
IGBT for switched reluctance motor
CALCULATION SemiSel 3.1
SKM400GB128D
CALCULATION SemiSel
switched reluctance motor
semikron SKM400GB128D
circuit diagram for switched reluctance motor for
IGBT JUNCTION TEMPERATURE CALCULATION
calculation of switching frequency of igbt inverter
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Abstract: No abstract text available
Text: SKM400GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules SKM400GA12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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Untitled
Abstract: No abstract text available
Text: SKM400GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C
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Text: SKM400GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules SKM400GA12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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SKM400GA12T4
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Abstract: No abstract text available
Text: SKM25GAH125D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 39 A Tc = 80 °C 27 A 25 A ICnom ICRM SEMITRANS 6 IGBT Modules SKM25GAH125D tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V
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IHCS22R60CE
Abstract: IGBT DRIVER SCHEMATIC 3 PHASE
Text: Data sheet, May 2009 Control integrated Power System CIPOS IHCS22R60CE Two Phase Switched Reluctance Drives Power Management & Drives N e v e r s t o p t h i n k i n g . CIPOS™ IHCS22R60CE Control integrated Power System (CIPOS™) Revision History:
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IHCS22R60CE
IHCS22R60CE
IGBT DRIVER SCHEMATIC 3 PHASE
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Text: SKM400GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS 4 IGBT4 Modules SKM400GA12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 913 A Tc = 80 °C 702 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules SKM600GA12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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Text: SKM300GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules SKM300GA12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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SKM200GAL12T4
Abstract: diode 331
Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SKM200GAL12T4
SKM200GAL12T4
diode 331
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Text: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules SKM300GA12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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Text: SKM600GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 913 A Tc = 80 °C 702 A 600 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules SKM600GA12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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Text: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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Text: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules SKM300GA12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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Abstract: No abstract text available
Text: SKM400GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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Text: SKM400GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS 4 IGBT4 Modules SKM400GA12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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IHCS22R60CE
Abstract: No abstract text available
Text: Data Sheet, Jun. 2010 C o n t r o l I n t e g r a t e d P Ow e r System CIPOS IHCS22R60CE Two Phase Switched Reluctance Drives http://www.lspst.com For Power Management Application CIPOS™ IHCS22R60CE Revision History: Previous Version: Page 2010-06
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IHCS22R60CE
Abstract: No abstract text available
Text: Data sheet, November 2008 Control integrated Power System CIPOS IHCS22R60CE Two Phase Switched Reluctance Drives Po we r Ma n a g e me n t & Dri ve s N e v e r s t o p t h i n k i n g . CIPOS™ IHCS22R60CE Control integrated Power System (CIPOS™) Revision History:
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Text: SKM150GAR12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules SKM150GAR12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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