Untitled
Abstract: No abstract text available
Text: Product Overview NGTB30N60IHLWG: IGBT 600V 30A Induction Heating For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides
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NGTB30N60IHLWG:
NGTB30N60IHLWG
O-247-3
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FGL40N120AND
Abstract: 100W UPS FGL40N120AN IH 001
Text: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor
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FGL40N120AN
O-264
FGL40N120AND
FGL40N120AND
100W UPS
FGL40N120AN
IH 001
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Untitled
Abstract: No abstract text available
Text: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor
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FGL40N120AN
FGL40N120AN
O-264
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Untitled
Abstract: No abstract text available
Text: IGBT FGH40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor
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FGH40N120AN
FGH40N120AN
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RJH1CF5RDPQ-80
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0355EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF5RDPQ-80
R07DS0355EJ0100
PRSS0003ZE-A
O-247)
RJH1CF5RDPQ-80
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fgh80n60
Abstract: FGH80N60FDTU FGH80N60FD
Text: FGH80N60FD tm 600V, 80A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and
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FGH80N60FD
FGH80N60FD
fgh80n60
FGH80N60FDTU
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FAIRCHILD FGL40N120AN
Abstract: FGL40N120AN
Text: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor
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FGL40N120AN
O-264
FAIRCHILD FGL40N120AN
FGL40N120AN
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rjh1cf7
Abstract: single and gate ic number RJH1CF7RDPQ-80 RJH1CF7RDPQ-80#T2
Text: Preliminary Datasheet RJH1CF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0357EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF7RDPQ-80
R07DS0357EJ0100
PRSS0003ZE-A
O-247)
rjh1cf7
single and gate ic number
RJH1CF7RDPQ-80
RJH1CF7RDPQ-80#T2
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Silicon N Channel IGBT High Speed Power Switching
Abstract: RJH1CF4RDPQ-80
Text: Preliminary Datasheet RJH1CF4RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0354EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF4RDPQ-80
R07DS0354EJ0100
PRSS0003ZE-A
O-247)
Silicon N Channel IGBT High Speed Power Switching
RJH1CF4RDPQ-80
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0356EJ0100 Rev.1.00 May 12, 2010 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF6RDPQ-80
R07DS0356EJ0100
PRSS0003ZE-A
O-247)
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FGH80N60FD2TU
Abstract: FGH80N60FD2 fgh80n60
Text: FGH80N60FD2 tm 600V, 80A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and
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FGH80N60FD2
FGH80N60FD2
FGH80N60FD2TU
fgh80n60
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Untitled
Abstract: No abstract text available
Text: FGH80N60FD2 600 V Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses
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FGH80N60FD2
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Untitled
Abstract: No abstract text available
Text: FGH80N60FD 600 V Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and
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FGH80N60FD
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1CF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0356EJ0100 Rev.1.00 May 12, 2010 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1CF6RDPQ-80
R07DS0356EJ0100
PRSS0003ZE-A
O-247)
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fgh80n60
Abstract: FGH80N60FD2TU FGH80N60FD fairchild igbt to247
Text: FGH80N60FD2 600 V Field Stop IGBT Features General Description • • • • • Using novel field stop IGBT technology, Fairchild 's field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses
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FGH80N60FD2
FGH80N60FD2
fgh80n60
FGH80N60FD2TU
FGH80N60FD
fairchild igbt to247
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TF-600
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0413EJ0100 Rev.1.00 May 18, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1DF7RDPQ-80
R07DS0413EJ0100
PRSS0003ZE-A
O-247)
TF-600
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rjh1bf7
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0394EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1BF7RDPQ-80
R07DS0394EJ0100
PRSS0003ZE-A
O-247)
rjh1bf7
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fgh80n60
Abstract: FGH80N60FD FGH80N60FDTU 247A03 fairchild igbt to247
Text: FGH80N60FD 600 V Field Stop IGBT Features General Description • • • • • Using novel field stop IGBT technology, Fairchild 's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and
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FGH80N60FD
FGH80N60FD
fgh80n60
FGH80N60FDTU
247A03
fairchild igbt to247
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FGH40N60SFD
Abstract: FGH40N60SFDTU IGBT 40A igbt 400V 40A CY8C21434-24LTXI FGH40N60
Text: FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where
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FGH40N60SFD
100oC
FGH40N60SFD
FGH40N60SFDTU
IGBT 40A
igbt 400V 40A
CY8C21434-24LTXI
FGH40N60
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FGH75N60SFTU
Abstract: fgh75n60 DEVICE MARKING CODE 150A FGH75N60SF
Text: FGH75N60SF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where
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FGH75N60SF
100oC
FGH75N60SF
FGH75N60SFTU
fgh75n60
DEVICE MARKING CODE 150A
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fgh80n60
Abstract: igbt 40a 600v FGH80N60FD FGH80N60FDTU
Text: FGH80N60FD tm 600V, 80A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and
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FGH80N60FD
FGH80N60FD
fgh80n60
igbt 40a 600v
FGH80N60FDTU
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rjh1bf7
Abstract: No abstract text available
Text: Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0394EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating
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RJH1BF7RDPQ-80
R07DS0394EJ0100
PRSS0003ZE-A
O-247)
rjh1bf7
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SGL40N150
Abstract: No abstract text available
Text: IGBT SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL40N150 is designed for the Induction Heating applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 3.7 V @ IC = 40A
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SGL40N150
SGL40N150
O-264
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FGL40N120
Abstract: FGL40N120ANTU FAIRCHILD FGL40N120AN
Text: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor
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FGL40N120AN
FGL40N120AN
O-264
FGL40N120ANTU
FGL40N120
FAIRCHILD FGL40N120AN
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