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    IGBT DESIGNERS MANUAL Search Results

    IGBT DESIGNERS MANUAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT DESIGNERS MANUAL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGBT Designers Manual International Rectifier IGBT Designers Manual Original PDF

    IGBT DESIGNERS MANUAL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IGBT Designers Manual

    Abstract: dc control using ir2110 and mosfet IR2110 application note igbt series bridge ir2110 ir2110 application DATA SHEET OF IGBT IR2110 IR2110 maximum frequency MOSFET designer manual
    Text: Design Tips DT 92-3B Using Standard Control ICs to Generate Negative Gate Bias for MOSFETs & IGBTs Introduction Dynamic Operation Inherently neither the MOSFET nor the IGBT requires negative bias on the gate. Setting the gate voltage to zero at turn-off insures proper


    Original     		92-3B IR2110 IGBT Designers Manual dc control using ir2110 and mosfet IR2110 application note igbt series bridge ir2110 ir2110 application DATA SHEET OF IGBT IR2110 IR2110 maximum frequency MOSFET designer manual PDF

    igbt driver with 555 timer

    Abstract: ic 555 timer of ic 555 ic 555 timer gate drive schematic circuit ic 555 timer gate drive mosfet 555 timer igbt driver IC 555 timer circuit diagram 555 timer IR2125 CIRCUIT SCHEMATIC ICL71555IPA
    Text: Design Tips DT 92-4A Simple High Side Drive Provides Fast Switching and Continuous On-Time Introduction P-channel power MOSFETs are typically used as high-side switches in low power applications because of simplier gate drive circuitry. As power levels, either voltage or current, increase,


    Original     		PDF

    IGBT Designers Manual

    Abstract: 044C IR2102 IR2102S MP150 mosfet 600V logic level
    Text: Data Sheet No. PD-6.044C IR2102 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout


    Original     		IR2102 IR2102 EME6300 MP150 MP190 IGBT Designers Manual 044C IR2102S mosfet 600V logic level PDF

    IR2117

    Abstract: igbt, thermal design manual IGBT Designers Manual mosfet 600V logic level IRFBC30 IR2117S MP150 EME-6300 igbt driver IR2117 transistor B78
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.031C IR2117 SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V


    Original     		IR2117 IR2117 IRFBC20) IRFBC30) IRFBC40) IRFPE50) igbt, thermal design manual IGBT Designers Manual mosfet 600V logic level IRFBC30 IR2117S MP150 EME-6300 igbt driver IR2117 transistor B78 PDF

    IGBT Designers Manual

    Abstract: IR2118 EME-6300 6041c IRFBC30 IR2118S MP150
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.041C IR2118 SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V


    Original     		IR2118 IR2118 IRFBC20) IRFBC30) IRFBC40) IRFPE50) IGBT Designers Manual EME-6300 6041c IRFBC30 IR2118S MP150 PDF

    IR2118

    Abstract: IRFBC30 IR2118S MP150 igbt, thermal design manual IGBT Designers Manual 150 10v IRFPE50
    Text: Data Sheet No. PD-6.041C IR2118 SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout


    Original     		IR2118 IR2118 IRFBC20) IRFBC30) IRFBC40) IRFPE50) IRFBC30 IR2118S MP150 igbt, thermal design manual IGBT Designers Manual 150 10v IRFPE50 PDF

    IR2117

    Abstract: IR2117 APPLICATION NOTE IGBT Designers Manual igbt driver IR2117 IRFBC30 IR2117S MP150 transistor B78
    Text: Data Sheet No. PD-6.031C IR2117 SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout


    Original     		IR2117 IR2117 IRFBC20) IRFBC30) IRFBC40) IRFPE50) IR2117 APPLICATION NOTE IGBT Designers Manual igbt driver IR2117 IRFBC30 IR2117S MP150 transistor B78 PDF

    ir2101 datasheet

    Abstract: IR2101 IR2101 AN IR2101S MP150 B3 ho transistor
    Text: Data Sheet No. PD-6.043C IR2101 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout


    Original     		IR2101 IR2101 EME6300 MP150 MP190 ir2101 datasheet IR2101 AN IR2101S B3 ho transistor PDF

    IR2101

    Abstract: ir2101 datasheet IR2101 AN IR2101S MP150 silicon rectifier data manual
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.043C IR2101 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V


    Original     		IR2101 IR2101 EME6300 MP150 MP190 ir2101 datasheet IR2101 AN IR2101S silicon rectifier data manual PDF

    b196 transistor

    Abstract: 555 timer igbt driver Self-Oscillating Half-Bridge Driver igbt driver with 555 timer transistor b196 IGBT Designers Manual B-195 IR2152 b196 transistor Connection Diagram IR2151
    Text: Data Sheet No. PD-6.035F IR2152 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Undervoltage lockout n Programmable oscillator frequency


    Original     		IR2152 IR2152 EME6300 MP150 MP190 B-197 B-198 b196 transistor 555 timer igbt driver Self-Oscillating Half-Bridge Driver igbt driver with 555 timer transistor b196 IGBT Designers Manual B-195 b196 transistor Connection Diagram IR2151 PDF

    b196 transistor

    Abstract: IR2151 IR2152 IR2151S MP150 MP15 transistor b196
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.035F IR2152 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		IR2152 IR2152 EME6300 MP150 MP190 B-197 B-198 b196 transistor IR2151 IR2151S MP15 transistor b196 PDF

    150 Khz pulse circuit

    Abstract: ir2151 IR2151S Ablebond 190 MP150 IC DRIVER IR2151
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.034G IR2151 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		IR2151 IR2151 EME6300 MP150 MP190 B-191 B-192 150 Khz pulse circuit IR2151S Ablebond 190 IC DRIVER IR2151 PDF

    MP150

    Abstract: 042D IR2128 IR2128S PD6042 b132 transistor
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.042D IR2128 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		IR2128 IR2128 EME6300 MP150 MP190 B-133 B-134 042D IR2128S PD6042 b132 transistor PDF

    ir2151

    Abstract: igbt driver with 555 timer IGBT Designers Manual ic 555 timer gate drive 555 igbt driver 555 timer igbt driver zener 600v IR2151S MP150 so8 Wire bond
    Text: Data Sheet No. PD-6.034G IR2151 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Undervoltage lockout n Programmable oscillator frequency


    Original     		IR2151 IR2151 EME6300 MP150 MP190 B-191 B-192 igbt driver with 555 timer IGBT Designers Manual ic 555 timer gate drive 555 igbt driver 555 timer igbt driver zener 600v IR2151S so8 Wire bond PDF

    IR2111 APPLICATIONS

    Abstract: application IR2111 IR2111 IGBT Designers Manual igbt, thermal design manual IR2111 how to measure voltage transients irfbc40 free download MOSFET designer manual IR2111S MP150
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V


    Original     		IR2111 IR2111 IRFBC20) IRFBC30) IRFBC40) IRFPE50) IR2111 APPLICATIONS application IR2111 IGBT Designers Manual igbt, thermal design manual IR2111 how to measure voltage transients irfbc40 free download MOSFET designer manual IR2111S MP150 PDF

    IR2111 APPLICATIONS

    Abstract: IR2111 application IR2111 IGBT Designers Manual IR2111S MP150 IR2111 SO8
    Text: Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels


    Original     		IR2111 IR2111 IRFBC20) IRFBC30) IRFBC40) IRFPE50) IR2111 APPLICATIONS application IR2111 IGBT Designers Manual IR2111S MP150 IR2111 SO8 PDF

    IR2155

    Abstract: 555 timer igbt driver Self-Oscillating IGBT manual zener 600v MP150 B199 555 timer for 12v supply
    Text: Data Sheet No. PD-6.029G IR2155 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Undervoltage lockout n Programmable oscillator frequency


    Original     		IR2155 IR2155 EME6300 MP150 MP190 B-203 B-204 555 timer igbt driver Self-Oscillating IGBT manual zener 600v B199 555 timer for 12v supply PDF

    ir2155

    Abstract: ir2155 circuit 555 igbt driver 555 timer igbt driver igbt driver with 555 timer SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET undervoltage MP150 B199
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.029G IR2155 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		IR2155 IR2155 EME6300 MP150 MP190 B-203 B-204 ir2155 circuit 555 igbt driver 555 timer igbt driver igbt driver with 555 timer SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET undervoltage B199 PDF

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original     		DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ PDF

    IR2121

    Abstract: IR2121 equivalent DOWNLOAD ir2121 B-93 MP150 IGBT Designers Manual MOSFET IR2121
    Text: Data Sheet No. PD-6.018D IR2121 CURRENT LIMITING LOW SIDE DRIVER Features Product Summary n Gate drive supply range from 12 to 18V n Undervoltage lockout n Current detection and limiting loop to limit driven power transistor current n Error lead indicates fault conditions and programs


    Original     		IR2121 IR2121 B-105 IR2121 equivalent DOWNLOAD ir2121 B-93 MP150 IGBT Designers Manual MOSFET IR2121 PDF

    IR2121

    Abstract: MOSFET IR2121 Transistor b103 104X111 B-93 MP150 IGBT Designers Manual CURRENT LIMITING LOW SIDE DRIVER
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.018D IR2121 CURRENT LIMITING LOW SIDE DRIVER Features Product Summary n Gate drive supply range from 12 to 18V n Undervoltage lockout n Current detection and limiting loop to limit driven power transistor current


    Original     		IR2121 IR2121 B-105 MOSFET IR2121 Transistor b103 104X111 B-93 MP150 IGBT Designers Manual CURRENT LIMITING LOW SIDE DRIVER PDF

    IR2113 APPLICATION NOTE

    Abstract: circuit to ir2113 IR2113 IR2113 APPLICATION IR2113-1 IR2113-2 IR2113S MP150 AN IR2113S IGBT Designers Manual
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V


    Original     		IR2113 IR2113S IRFBC30) IRFBC20) IR2113 APPLICATION NOTE circuit to ir2113 IR2113 IR2113 APPLICATION IR2113-1 IR2113-2 MP150 AN IR2113S IGBT Designers Manual PDF

    IR2112 equivalent

    Abstract: IR2112-2 IR2112 IR2112 circuit IR2112S IR2112-1 MP150 high current igbt IGBT Designers Manual
    Text: Data Sheet No. PD-6.026C IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels


    Original     		IR2112 IR2112 IR2112S IRFBC40) IRFPE50) IR2112 equivalent IR2112-2 IR2112 circuit IR2112-1 MP150 high current igbt IGBT Designers Manual PDF

    GBAN-PVI-1

    Abstract: HEXFET Power MOSFET designer manual GBAN-PVI-1 HEXFET Power MOSFET designer manual mosfet reliability testing report power supply using IR2155 IR2113 inductive motor control 957B Spice 2 computer models for hexfets HV Floating MOS-Gate Driver circuits power MOSFET reliability report
    Text: x @r | Other Products from IR Available Literature DATABOOKS GOVERNMENT AND SPACE PRODUCTS DESIGNER’S M A N U A L . GSP-1 HEXFET DESIGNER’S MANUAL - APPLICATION NOTES & RELIABILITY DATA. HDM-1, VOL. 1


    OCR Scan     		IR6000 IR2155 GBAN-PVI-1 HEXFET Power MOSFET designer manual GBAN-PVI-1 HEXFET Power MOSFET designer manual mosfet reliability testing report power supply using IR2155 IR2113 inductive motor control 957B Spice 2 computer models for hexfets HV Floating MOS-Gate Driver circuits power MOSFET reliability report PDF