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    IGBT CHIP 600V Search Results

    IGBT CHIP 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT CHIP 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSM300GB60DLC

    Abstract: SIGC121T60NR2
    Text: Preliminary SIGC121T60NR2 IGBT Chip in NPT-technology FEATURES: • 600V NPT technology 100µm chip • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type SIGC121T60NR2 This chip is used for: • IGBT Modules C Applications:


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    PDF SIGC121T60NR2 Q67050-A4011A001 7292-E, BSM300GB60DLC SIGC121T60NR2

    SIGC25T60N

    Abstract: No abstract text available
    Text: Preliminary SIGC25T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC25T60N 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC25T60N Q67041-A4691A001 7262-E, SIGC25T60N

    SIGC07T60N

    Abstract: No abstract text available
    Text: Preliminary SIGC07T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC07T60N 600V This chip is used for: • IGBT-Modules G Applications: • drives


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    PDF SIGC07T60N Q67050-A4049A003 7212-E, SIGC07T60N

    SIGC121T60NR2C

    Abstract: No abstract text available
    Text: Preliminary SIGC121T60NR2C IGBT Chip in NPT-technology FEATURES: • 600V NPT technology 100µm chip • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE SIGC121T60NR2C 600V ICn 150A This chip is used for: • IGBT Modules


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    PDF SIGC121T60NR2C SIGC121T60NR2C Q67041-A4684A001 7292-M,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC11T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type SIGC11T60SNC VCE 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC11T60SNC Q67050-A4155sawn 1400e 7302-S,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC12T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC12T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC12T60NC Q67041-A4688sawn 7222-M,

    SIGC12T60NC

    Abstract: fs10r06
    Text: Preliminary SIGC12T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC12T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC12T60NC Q67041-A4688A001 7222-M, SIGC12T60NC fs10r06

    SIGC11T60NC

    Abstract: No abstract text available
    Text: Preliminary SIGC11T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC11T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC11T60NC Q67050-A4158A001 3200in 7302-M, SIGC11T60NC

    A001

    Abstract: SGP10N60A SIGC11T60SNC
    Text: Preliminary SIGC11T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type SIGC11T60SNC VCE 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC11T60SNC Q67050-A4155sawn 7302-S, A001 SGP10N60A SIGC11T60SNC

    SIGC03T60SNC

    Abstract: SKP02N60 281101
    Text: Preliminary SIGC03T60SNC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type SIGC03T60SNC VCE 600V This chip is used for: • IGBT Modules


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    PDF SIGC03T60SNC Q67041-A3000sawn 7192-S, SIGC03T60SNC SKP02N60 281101

    ic 7452

    Abstract: No abstract text available
    Text: Preliminary SIGC61T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC61T60NC 600V This chip is used for: • IGBT-Modules


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    PDF SIGC61T60NC Q67050-A4160sawn 7452-M, ic 7452

    7212

    Abstract: 7212M
    Text: Preliminary SIGC07T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC07T60NC 600V This chip is used for: • IGBT-Modules G Applications: • drives


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    PDF SIGC07T60NC Q67050-A4134sawn 7212-M, 7212 7212M

    7232-E

    Abstract: No abstract text available
    Text: Preliminary SIGC14T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60N 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC14T60N Q67041-A4689A001 320es 7232-E, 7232-E

    7222-E

    Abstract: SIGC12T60N
    Text: Preliminary SIGC12T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC12T60N 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC12T60N Q67041-A4688A001 7222-E, 7222-E SIGC12T60N

    SIGC42T60NC

    Abstract: No abstract text available
    Text: Preliminary SIGC42T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC42T60NC 600V This chip is used for: • IGBT-Modules G Applications: • drives


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    PDF SIGC42T60NC Q67041-A4692A001 7272-M, SIGC42T60NC

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC18T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC18T60NC Q67050-A4139sawn 1400e 7242-M,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC121T60NR2C IGBT Chip in NPT-technology FEATURES: • 600V NPT technology 100µm chip • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE SIGC121T60NR2C 600V ICn 150A This chip is used for: • IGBT Modules


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    PDF SIGC121T60NR2C SIGC121T60NR2C Q67041-A4684sawn 7292-M,

    7262-M

    Abstract: No abstract text available
    Text: Preliminary SIGC25T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC25T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC25T60NC Q67050-A4143sawn 7262-M, 7262-M

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC42T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC42T60NC 600V This chip is used for: • IGBT-Modules G Applications: • drives


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    PDF SIGC42T60NC Q67041-A4692sawn 7272-M,

    SIGC03T60SN

    Abstract: SKP02N60 SIGC03T60S
    Text: Preliminary SIGC03T60SN IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC03T60SN 600V This chip is used for: • IGBT Modules


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    PDF SIGC03T60SN Q67041-A3000A001 7192-F, SIGC03T60SN SKP02N60 SIGC03T60S

    SIGC18T60N

    Abstract: No abstract text available
    Text: Preliminary SIGC18T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60N 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC18T60N Q67041-A4690A001 320es 7242-E, SIGC18T60N

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC14T60NC Q67050-A4135sawn 7232-M,

    SIGC121T60NR2C

    Abstract: No abstract text available
    Text: SIGC121T60NR2C IGBT Chip in NPT-technology FEATURES: • 600V NPT technology 100µm chip • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE SIGC121T60NR2C 600V ICn 150A This chip is used for: • IGBT Modules


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    PDF SIGC121T60NR2C SIGC121T60NR2C Q67041-A4684A001 7292-M,

    ic 7452

    Abstract: SIGC61T60NC
    Text: Preliminary SIGC61T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC61T60NC 600V This chip is used for: • IGBT-Modules


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    PDF SIGC61T60NC Q67050-A4160A001 7452-M, ic 7452 SIGC61T60NC