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    IGBT 800V 80A Search Results

    IGBT 800V 80A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 800V 80A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT10078BLL

    Abstract: APT50GT120LRDQ2G
    Text: APT50GT120LRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2 APT50GT120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-264 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


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    APT50GT120LRDQ2 APT50GT120LRDQ2 APT50GT120LRDQ2G* O-264 50KHz APT10078BLL APT50GT120LRDQ2G PDF

    APT10078BLL

    Abstract: No abstract text available
    Text: APT50GT120B2RDL G 1200V TYPICAL PERFORMANCE CURVES APT50GT120B2RDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


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    APT50GT120B2RDL APT10078BLL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT50GT120LRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2 APT50GT120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-264 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


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    APT50GT120LRDQ2 APT50GT120LRDQ2 APT50GT120LRDQ2G* O-264 50KHz VG205) PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES 1200V APT33GF120B2_LRDQ2 G APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED (B2) T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through


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    APT33GF120B2 APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* 20KHz O-264 PDF

    APT25GT120BRDQ2G

    Abstract: No abstract text available
    Text: APT25GT120BRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2 APT25GT120BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


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    APT25GT120BRDQ2 APT25GT120BRDQ2G* 50KHz APT25GT120BRDQ2G PDF

    3000 0442

    Abstract: APT25GT120BRDQ2G APT10078BLL APT25GT120BRDQ2 silicon carbide
    Text: APT25GT120BRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2 APT25GT120BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


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    APT25GT120BRDQ2 APT25GT120BRDQ2 APT25GT120BRDQ2G* 50KHz 3000 0442 APT25GT120BRDQ2G APT10078BLL silicon carbide PDF

    Diode 25a 800v

    Abstract: APT10078BLL APT25GT120BRDQ2 APT25GT120BRDQ2G igbt 800v 80a
    Text: TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2 G 1200V APT25GT120BRDQ2 APT25GT120BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 4 7 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


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    APT25GT120BRDQ2 APT25GT120BRDQ2 APT25GT120BRDQ2G* 50KHz Diode 25a 800v APT10078BLL APT25GT120BRDQ2G igbt 800v 80a PDF

    APT33GF120B2RDQ2G

    Abstract: APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120LRDQ2G
    Text: TYPICAL PERFORMANCE CURVES 1200V APT33GF120B2_LRDQ2 G APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED (B2) T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through


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    APT33GF120B2 APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* O-264 20KHz APT33GF120B2RDQ2G APT33GF120LRDQ2 APT33GF120LRDQ2G PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES 1200V APT33GF120B2_LRDQ2 G APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED (B2) T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through


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    APT33GF120B2 APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* O-264 20KHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2 G 1200V APT25GT120BRDQ2 APT25GT120BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


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    APT25GT120BRDQ2 APT25GT120BRDQ2 APT25GT120BRDQ2G* 50KHz PDF

    igbt 800v 80a

    Abstract: No abstract text available
    Text: APT40GF120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.


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    APT40GF120JRDQ2 APT40GF120JRDQ2 20KHz E145592 igbt 800v 80a PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


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    100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    of 8404

    Abstract: No abstract text available
    Text: APT60GF120JRD 1200V E E Fast IGBT & FRED G The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed


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    APT60GF120JRD of 8404 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


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    APT25GN120B2DQ2 APT25GN120B2DQ2 APT25GN120B2DQ2G* Resis31 PDF

    M6 transistor

    Abstract: CM200DY28H CM200DY-28H
    Text: MITSUBISHI IGBT MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


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    CM200DY-28H M6 transistor CM200DY28H CM200DY-28H PDF

    Untitled

    Abstract: No abstract text available
    Text: APT45GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


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    APT45GP120B2DQ2 APT45GP120B2DQ2 APT45GP120B2DQ2G* PDF

    Untitled

    Abstract: No abstract text available
    Text: APT50GN120L2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2 APT50GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


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    APT50GN120L2DQ2 APT50GN120L2DQ2 APT50GN120L2DQ2G* O-264 PDF

    3000 0442

    Abstract: 7433 APT10035LLL APT45GP120B2DQ2 APT45GP120B2DQ2G
    Text: APT45GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


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    APT45GP120B2DQ2 APT45GP120B2DQ2 APT45GP120B2DQ2G* 3000 0442 7433 APT10035LLL APT45GP120B2DQ2G PDF

    APT35GN120L2DQ2

    Abstract: Tf 2395
    Text: APT35GN120L2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2 APT35GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


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    APT35GN120L2DQ2 APT35GN120L2DQ2G* O-264 Tf 2395 PDF

    CM200DY-28H

    Abstract: CM200DY28H 200A6
    Text: MITSUBISHI IGBT MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


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    CM200DY-28H CM200DY-28H CM200DY28H 200A6 PDF

    power Diode 800V 20A

    Abstract: 12v to 240v inverter APT35GN120L2DQ2 APT35GN120L2DQ2G MIC4452
    Text: APT35GN120L2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2 APT35GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


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    APT35GN120L2DQ2 APT35GN120L2DQ2 APT35GN120L2DQ2G* O-264 power Diode 800V 20A 12v to 240v inverter APT35GN120L2DQ2G MIC4452 PDF

    APT50GN120L2DQ2

    Abstract: APT50GN120L2DQ2G 264-MAX
    Text: APT50GN120L2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2 APT50GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


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    APT50GN120L2DQ2 APT50GN120L2DQ2 APT50GN120L2DQ2G* O-264 APT50GN120L2DQ2G 264-MAX PDF

    APT25GN120B2DQ2

    Abstract: No abstract text available
    Text: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


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    APT25GN120B2DQ2 APT25GN120B2DQ2G* PDF

    APT50GP12

    Abstract: No abstract text available
    Text: APT50GN120L2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2 APT50GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


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    APT50GN120L2DQ2 APT50GN120L2DQ2G* O-264 APT50GP12 PDF