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    IGBT 800V 80A Search Results

    IGBT 800V 80A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 800V 80A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10078BLL

    Abstract: APT50GT120LRDQ2G
    Text: APT50GT120LRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2 APT50GT120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-264 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


    Original     		PDF APT50GT120LRDQ2 APT50GT120LRDQ2 APT50GT120LRDQ2G* O-264 50KHz APT10078BLL APT50GT120LRDQ2G

    APT10078BLL

    Abstract: No abstract text available
    Text: APT50GT120B2RDL G 1200V TYPICAL PERFORMANCE CURVES APT50GT120B2RDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT50GT120B2RDL APT10078BLL

    Untitled

    Abstract: No abstract text available
    Text: APT50GT120LRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2 APT50GT120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-264 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


    Original     		PDF APT50GT120LRDQ2 APT50GT120LRDQ2 APT50GT120LRDQ2G* O-264 50KHz VG205)

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES 1200V APT33GF120B2_LRDQ2 G APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED (B2) T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through


    Original     		PDF APT33GF120B2 APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* 20KHz O-264

    APT25GT120BRDQ2G

    Abstract: No abstract text available
    Text: APT25GT120BRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2 APT25GT120BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


    Original     		PDF APT25GT120BRDQ2 APT25GT120BRDQ2G* 50KHz APT25GT120BRDQ2G

    3000 0442

    Abstract: APT25GT120BRDQ2G APT10078BLL APT25GT120BRDQ2 silicon carbide
    Text: APT25GT120BRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2 APT25GT120BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


    Original     		PDF APT25GT120BRDQ2 APT25GT120BRDQ2 APT25GT120BRDQ2G* 50KHz 3000 0442 APT25GT120BRDQ2G APT10078BLL silicon carbide

    Diode 25a 800v

    Abstract: APT10078BLL APT25GT120BRDQ2 APT25GT120BRDQ2G igbt 800v 80a
    Text: TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2 G 1200V APT25GT120BRDQ2 APT25GT120BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 4 7 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


    Original     		PDF APT25GT120BRDQ2 APT25GT120BRDQ2 APT25GT120BRDQ2G* 50KHz Diode 25a 800v APT10078BLL APT25GT120BRDQ2G igbt 800v 80a

    APT33GF120B2RDQ2G

    Abstract: APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120LRDQ2G
    Text: TYPICAL PERFORMANCE CURVES 1200V APT33GF120B2_LRDQ2 G APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED (B2) T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through


    Original     		PDF APT33GF120B2 APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* O-264 20KHz APT33GF120B2RDQ2G APT33GF120LRDQ2 APT33GF120LRDQ2G

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES 1200V APT33GF120B2_LRDQ2 G APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED (B2) T-Max® TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through


    Original     		PDF APT33GF120B2 APT33GF120B2RDQ2 APT33GF120LRDQ2 APT33GF120B2RDQ2G* APT33GF120LRDQ2G* O-264 20KHz

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2 G 1200V APT25GT120BRDQ2 APT25GT120BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch


    Original     		PDF APT25GT120BRDQ2 APT25GT120BRDQ2 APT25GT120BRDQ2G* 50KHz

    igbt 800v 80a

    Abstract: No abstract text available
    Text: APT40GF120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.


    Original     		PDF APT40GF120JRDQ2 APT40GF120JRDQ2 20KHz E145592 igbt 800v 80a

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    of 8404

    Abstract: No abstract text available
    Text: APT60GF120JRD 1200V E E Fast IGBT & FRED G The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed


    Original     		PDF APT60GF120JRD of 8404

    Untitled

    Abstract: No abstract text available
    Text: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT25GN120B2DQ2 APT25GN120B2DQ2 APT25GN120B2DQ2G* Resis31

    M6 transistor

    Abstract: CM200DY28H CM200DY-28H
    Text: MITSUBISHI IGBT MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


    Original     		PDF CM200DY-28H M6 transistor CM200DY28H CM200DY-28H

    Untitled

    Abstract: No abstract text available
    Text: APT45GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT45GP120B2DQ2 APT45GP120B2DQ2 APT45GP120B2DQ2G*

    Untitled

    Abstract: No abstract text available
    Text: APT50GN120L2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2 APT50GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT50GN120L2DQ2 APT50GN120L2DQ2 APT50GN120L2DQ2G* O-264

    3000 0442

    Abstract: 7433 APT10035LLL APT45GP120B2DQ2 APT45GP120B2DQ2G
    Text: APT45GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT45GP120B2DQ2 APT45GP120B2DQ2 APT45GP120B2DQ2G* 3000 0442 7433 APT10035LLL APT45GP120B2DQ2G

    APT35GN120L2DQ2

    Abstract: Tf 2395
    Text: APT35GN120L2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2 APT35GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT35GN120L2DQ2 APT35GN120L2DQ2G* O-264 Tf 2395

    CM200DY-28H

    Abstract: CM200DY28H 200A6
    Text: MITSUBISHI IGBT MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


    Original     		PDF CM200DY-28H CM200DY-28H CM200DY28H 200A6

    power Diode 800V 20A

    Abstract: 12v to 240v inverter APT35GN120L2DQ2 APT35GN120L2DQ2G MIC4452
    Text: APT35GN120L2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2 APT35GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT35GN120L2DQ2 APT35GN120L2DQ2 APT35GN120L2DQ2G* O-264 power Diode 800V 20A 12v to 240v inverter APT35GN120L2DQ2G MIC4452

    APT50GN120L2DQ2

    Abstract: APT50GN120L2DQ2G 264-MAX
    Text: APT50GN120L2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2 APT50GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT50GN120L2DQ2 APT50GN120L2DQ2 APT50GN120L2DQ2G* O-264 APT50GN120L2DQ2G 264-MAX

    APT25GN120B2DQ2

    Abstract: No abstract text available
    Text: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT25GN120B2DQ2 APT25GN120B2DQ2G*

    APT50GP12

    Abstract: No abstract text available
    Text: APT50GN120L2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2 APT50GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design


    Original     		PDF APT50GN120L2DQ2 APT50GN120L2DQ2G* O-264 APT50GP12