4mbi400vg
Abstract: 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060
Text: / 4MBI400VG-060R-50 IGBT Modules IGBT MODULE V series 600V / 400A / IGBT, RB-IGBT 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
|
Original
|
PDF
|
4MBI400VG-060R-50
4mbi400vg
4MBI400VG-060R-50
4mbi400vg060r50
4mbi400vg-060
|
FZ800R17KF6CB2
Abstract: KF6C
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
|
Original
|
PDF
|
|
eupec igbt
Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
|
Original
|
PDF
|
|
IGBT module FZ 1200
Abstract: KF6C FZ800R17KF6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
|
Original
|
PDF
|
FZ800R17KF6CB2
IGBT module FZ 1200
KF6C
FZ800R17KF6CB2
|
diode 1700v
Abstract: FZ800R17KF6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
|
Original
|
PDF
|
|
MITSUBISHI CM400
Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low
|
Original
|
PDF
|
20kHz
MITSUBISHI CM400
MITSUBISHI CM300
H BRIDGE inverters circuit diagram using igbt
NPN/transistor NEC K 2500
HALF BRIDGE NPN DARLINGTON POWER MODULE
ups circuit diagram using igbt
IGBT h-series application note
CM30 igbt
CM400
MITSUBISHI cm50-24h
|
Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES High speed low loss IGBT. Low-injection punch-through IGBT. Low driving power due to low input capacitance MOS gate. High speed low recovery loss diode.
|
Original
|
PDF
|
IGBT-SP-13012
P1/10
MBN800E33D-AX
000cycles)
|
Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD400S45KL3_B5 hochisolierendesModul highinsulatedmodule VCES = 4500V IC nom = 400A / ICRM = 800A TypischeAnwendungen • Hochleistungsumrichter • Mittelspannungsantriebe • Motorantriebe
|
Original
|
PDF
|
DD400S45KL3
|
74hc06
Abstract: TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A
Text: 目录 各种功率半导体器件和IGBT IGBT模块电路构成 IGBT模块的额定值和特性 IGBT模块的损耗和散热设计 IGBT模块的门极驱动 上桥臂的驱动 3相供电VVVF变频器系统框图 IGBT元件的短路和过电压保护 IGBT元件的过电压保护缓冲电路
|
Original
|
PDF
|
PHMB400B12
PDMB100B12C
1/2LiC21/2Cse2
600V1
200A1
200V800AIGBT3
100kWIGBT
200A1200V800A
74hc06
TLP250
IGBT 10KHz
IR2171
ptmb50e6c
igbt rcd
SCR 207A
50A 1200V SCR
SCR 100A 1200V
Equivalent for SCR 207A
|
Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ400R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 400A / ICRM = 800A TypischeAnwendungen • Mittelspannungsantriebe
|
Original
|
PDF
|
FZ400R65KE3
Isolationseigenschaftenvon10
|
74hc06
Abstract: equivalent components for scr 207a SCR 207A 15KW igbt 200 A 1200 V TLP250 200V igbt 15KW igbt SCR 100A 1200V 0.75KW* LG IGBT
Text: 목차 각종 전력 소자와 IGBT 2 IGBT 모듈의 회로 구성 4 IGBT 모듈의 정격 및 특성 6 IGBT의 모듈 손실과 방열 10 IGBT 모듈의 게이트 구동 20 상부 구동 24 3상 브리지 인버터 26 단락 및 과전압 보호 30 스너버 회로
|
Original
|
PDF
|
100kW
74hc06
equivalent components for scr 207a
SCR 207A
15KW igbt 200 A 1200 V
TLP250
200V igbt
15KW igbt
SCR 100A 1200V
0.75KW* LG
IGBT
|
Hitachi DSA00281
Abstract: MBN800
Text: IGBT MODULE Spec.No.IGBT-SP-10014 R0 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
|
Original
|
PDF
|
IGBT-SP-10014
MBN800H45E2
000cycles)
Hitachi DSA00281
MBN800
|
diod t4
Abstract: p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A
Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
|
Original
|
PDF
|
-50051D
GA400TD25S
10kHz
diod t4
p j 85 diod
GA400TD25S
t4 diod
INT-A-PAK Dual weight
diod 800A
|
Untitled
Abstract: No abstract text available
Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
|
Original
|
PDF
|
-50051D
GA400TD25S
10kHz
85ded
08-Mar-07
|
|
|
silicon thermal grease g747
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08038 R1 MBL800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
|
Original
|
PDF
|
IGBT-SP-08038
MBL800E33E
000cycles)
silicon thermal grease g747
|
Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-10004 R2 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES Low switching loss IGBT module. Low noise due to ultra soft fast recovery diode. High reliability, high durability module.
|
Original
|
PDF
|
IGBT-SP-10004
MBN800H45E2-H
000cycles)
|
GA400TD60U
Abstract: No abstract text available
Text: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
|
Original
|
PDF
|
GA400TD60U
25imeters
GA400TD60U
|
GSA400BA60
Abstract: jc31 welder inverter
Text: IGBT MODULE GSA400BA60 UL;E76102 M SanRex IGBT Module GSA400BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across each IGBT.
|
Original
|
PDF
|
GSA400BA60
E76102
GSA400BA60
jc31
welder inverter
|
Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
|
Original
|
PDF
|
IGBT-SP-05015
MBN800E33E
000cycles)
|
dc welder
Abstract: sanrex IGBT welder inverter AC welder IGBT circuit igbt ac motor speed control IGBT welder circuit GSA400AA120
Text: IGBT MODULE GSA400AA120 UL;E76102 M SanRex IGBT Module GSA400AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across each IGBT.
|
Original
|
PDF
|
GSA400AA120
E76102
GSA400AA120
dc welder
sanrex IGBT
welder inverter
AC welder IGBT circuit
igbt ac motor speed control
IGBT welder circuit
|
Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
|
Original
|
PDF
|
IGBT-SP-05015
MBN800E33E
000cycles)
|
GA400TD25S
Abstract: No abstract text available
Text: PD -50051C GA400TD25S "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
|
Original
|
PDF
|
-50051C
GA400TD25S
10kHz
Colle52-7105
GA400TD25S
|
3b0565
Abstract: KIT_XC2785X_SK TC1167
Text: Microcontroller Board Name 6ED100HP2-FA Products Description Order No. 1ED020I12-FA Driver board for HybridPACK 2 IGBT modules, employing coreless transformer single-channel driver 1ED020I12-FA. IGBT module to be ordered seperately. SP000552868 Driver board for HybridPACK™1 IGBT modules, employing
|
Original
|
PDF
|
1ED020I12-FA
6ED100HP2-FA
1ED020I12-FA.
SP000552868
SP000521526
FS800R07A2E3)
50V/800A,
1ED020I12-FA)
SP000635950
3b0565
KIT_XC2785X_SK
TC1167
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching appli cations. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast
|
OCR Scan
|
PDF
|
CM400HA-34H
Powe20
|
