40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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APT70GR120J
Abstract: No abstract text available
Text: APT70GR120J APT70GR120J 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
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APT70GR120J
APT70GR120J
E145592
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V544
Abstract: 70A 1200V IGBTS
Text: APT70GR120B2_L APT70GR120B2 APT70GR120L 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
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APT70GR120B2
APT70GR120L
V544
70A 1200V IGBTS
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APT70GR120J
Abstract: No abstract text available
Text: APT70GR120JD60 APT70GR120JD60 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
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APT70GR120JD60
APT70GR120JD60
E145592
APT70GR120J
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Diode smd code EXP
Abstract: No abstract text available
Text: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC
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I27247
70MT060WHTAPbF
150kHz
Diode smd code EXP
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Untitled
Abstract: No abstract text available
Text: Bulletin I27247 08/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC • Al2O3 DBC
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I27247
70MT060WHTAPbF
150kHz
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Untitled
Abstract: No abstract text available
Text: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC
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I27247
70MT060WHTAPbF
150kHz
12-Mar-07
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LIN opto isolator
Abstract: SPM6G080-060D IC 4098
Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G080-060D
/-20V
LIN opto isolator
SPM6G080-060D
IC 4098
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LIN opto isolator
Abstract: diode piv 800 50A IGBT desaturation SPM6G080-120D
Text: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G080-120D
/-20V
LIN opto isolator
diode piv 800 50A
IGBT desaturation
SPM6G080-120D
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diode sy 160
Abstract: n 4113 SPM6G150-060D
Text: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G150-060D
/-20V
diode sy 160
n 4113
SPM6G150-060D
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3 phase IGBT gate driver 1200
Abstract: SPM6G140-120D IGBT 50 amp 1200 volt
Text: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-120D
/-20V
3 phase IGBT gate driver 1200
SPM6G140-120D
IGBT 50 amp 1200 volt
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2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM
Abstract: DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D
Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G070-060D
2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM
DS34C87
LIN opto isolator
SFH6186-4
SPM6G070-060D
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Untitled
Abstract: No abstract text available
Text: tSENSITRON SPM6G150-060D SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G150-060D
/-20V
125oC
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SPM6G150-060D
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G150-060D
/-20V
SPM6G150-060D
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C 4977
Abstract: ON 4977 3 phase IGBT gate driver 1200 3 phase IGBT gate driver 4977 IGBT gate driver ic DS34C87 SPM6G140-060D OF IGBT
Text: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-060D
C 4977
ON 4977
3 phase IGBT gate driver 1200
3 phase IGBT gate driver
4977
IGBT gate driver ic
DS34C87
SPM6G140-060D
OF IGBT
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4100 data sheet
Abstract: IGBT gate driver ic 210C DS34C87 SFH6186-4 SPM6G120-120D
Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G120-120D
4100 data sheet
IGBT gate driver ic
210C
DS34C87
SFH6186-4
SPM6G120-120D
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IGBT 60A
Abstract: tp 806 IGBT DRIVER SCHEMATIC 3 PHASE SPM6G140-120D
Text: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-120D
/-20V
125oC
IGBT 60A
tp 806
IGBT DRIVER SCHEMATIC 3 PHASE
SPM6G140-120D
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driver igbt high side 1500V
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 REV.A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G120-120D
125oC
driver igbt high side 1500V
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C 4977
Abstract: ON 4977 SPM6G140-060D
Text: SENSITRON _ SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-060D
125oC
C 4977
ON 4977
SPM6G140-060D
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2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM
Abstract: SPM6G070-060D 210C DS34C87 SFH6186-4
Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G070-060D
2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM
SPM6G070-060D
210C
DS34C87
SFH6186-4
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. C Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G080-060D
/-20V
125oC
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IGBT DRIVER SCHEMATIC 3 PHASE
Abstract: 3 phase igbt driver schematic
Text: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV C Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G080-120D
/-20V
125oC
IGBT DRIVER SCHEMATIC 3 PHASE
3 phase igbt driver schematic
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IGBT 60A
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-120D
/-20V
125oC
IGBT 60A
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3 phase IGBT gate driver
Abstract: 3 phase IGBT gate driver 1200 4100 opto coupler high side IGBT driver IGBT gate driver ic opto-isolators current sensor DS34C87 SFH6186-4 SPM6G120-120D
Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G120-120D
3 phase IGBT gate driver
3 phase IGBT gate driver 1200
4100 opto coupler
high side IGBT driver
IGBT gate driver ic
opto-isolators current sensor
DS34C87
SFH6186-4
SPM6G120-120D
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