40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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Original
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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PDF
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60M324
Abstract: No abstract text available
Text: GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)
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Original
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GT60M324
60M324
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PDF
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Untitled
Abstract: No abstract text available
Text: GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)
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Original
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GT60M324
15mitation,
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PDF
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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Original
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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PDF
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60M324
Abstract: GT60M324 60M32
Text: GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11 s typ. (IC = 60A)
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GT60M324
60M324
GT60M324
60M32
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PDF
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RY 227 Tf 227 10A
Abstract: APT40GF120JRD IGBT 1200V 60A
Text: APT40GF120JRD 1200V 60A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT40GF120JRD
20KHz
OT-227
RY 227 Tf 227 10A
APT40GF120JRD
IGBT 1200V 60A
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PDF
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APT0406
Abstract: APT0502 APTGV75H60T3G
Text: APTGV75H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 60A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C Q3 11 • Solar converter
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APTGV75H60T3G
APT0406
APT0502
APTGV75H60T3G
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PDF
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Untitled
Abstract: No abstract text available
Text: APTGV75H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 60A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3
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APTGV75H60T3G
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PDF
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Untitled
Abstract: No abstract text available
Text: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 G1 Fast NPT IGBT Q2, Q4:
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APTGV25H120BG
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PDF
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Untitled
Abstract: No abstract text available
Text: APT40GF120JRD A dvanced pow er T e c h n o lo g y 9 1200V 60A Fast IGBT&FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free wheeling ultraFast Recovery Epitaxial Diode FRED offers superior
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OCR Scan
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APT40GF120JRD
20KHz
20Kf2)
OT-227
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PDF
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IGBT full bridge
Abstract: APTGV25H120BG IGBT 1200V 60A APT0501 APT0502 600V igbt dc to dc boost converter
Text: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 Q3 G3 CR3 CR1 G1 Fast NPT IGBT Q2, Q4:
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APTGV25H120BG
IGBT full bridge
APTGV25H120BG
IGBT 1200V 60A
APT0501
APT0502
600V igbt dc to dc boost converter
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PDF
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Untitled
Abstract: No abstract text available
Text: APT75GT120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT75GT120JRDQ3
APT75GT120JRDQ3
20KHz
E145592
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PDF
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8845 diode
Abstract: APT75GT120JRDQ3
Text: APT75GT120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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Original
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APT75GT120JRDQ3
APT75GT120JRDQ3
20KHz
E145592
8845 diode
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PDF
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APT60DQ60
Abstract: APT60GT60JRDQ3 APT60M75L2LL
Text: APT60GT60JRDQ3 600V TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT60GT60JRDQ3
100KHz
E145592
APT60DQ60
APT60GT60JRDQ3
APT60M75L2LL
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PDF
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Untitled
Abstract: No abstract text available
Text: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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APT50GT120B2RDQ2G
50KHz
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PDF
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Untitled
Abstract: No abstract text available
Text: APT60GT60JRDQ3 600V TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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Original
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APT60GT60JRDQ3
100KHz
E145592
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PDF
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APT50GT120B2RDQ2G
Abstract: APT10078BLL 000241
Text: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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APT50GT120B2RDQ2G
50KHz
Symb49
APT50GT120B2RDQ2G
APT10078BLL
000241
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PDF
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G8060
Abstract: No abstract text available
Text: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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APT50GT120B2RDQ2G
50KHz
G8060
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PDF
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30GT60BRD
Abstract: APT30GT60BRDG 30gt60br 30GT60B 30gt APT30GT60BRD
Text: 600V APT30GT60BRDG 55A APT30GT60BRD APT30GT60BRDG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined
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APT30GT60BRDG
APT30GT60BRD
APT30GT60BRDG*
O-247
150KHz
30GT60BRD
APT30GT60BRDG
30gt60br
30GT60B
30gt
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PDF
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LIN opto isolator
Abstract: SPM6G080-060D IC 4098
Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G080-060D
/-20V
LIN opto isolator
SPM6G080-060D
IC 4098
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PDF
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Untitled
Abstract: No abstract text available
Text: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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Original
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APT200GT60JRDQ4
50KHz
E145592
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PDF
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 APT75GT120JRDQ3 1200V E E Thunderbolt IGBT C G The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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Original
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APT75GT120JRDQ3
E145592
20KHz
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PDF
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LIN opto isolator
Abstract: diode piv 800 50A IGBT desaturation SPM6G080-120D
Text: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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Original
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SPM6G080-120D
/-20V
LIN opto isolator
diode piv 800 50A
IGBT desaturation
SPM6G080-120D
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PDF
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20GF120
Abstract: No abstract text available
Text: APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness
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Original
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APT20GF120BRD
O-247
20KHz
s120BRD
T0-247
20GF120
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PDF
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