Untitled
Abstract: No abstract text available
Text: SIGC18T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 20A
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SIGC18T60NC
Q67050-A4139A001
7242-M,
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Untitled
Abstract: No abstract text available
Text: SIGC18T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 20A
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SIGC18T60NC
Q67050-A4139A001
7242-M,
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IXGH36N60B3C1
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH36N60B3C1 = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES
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IC110
IXGH36N60B3C1
100ns
40kHz
O-247
36N60B3C1
IXGH36N60B3C1
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SIGC18T60N
Abstract: No abstract text available
Text: Preliminary SIGC18T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60N 600V This chip is used for: • IGBT Modules G Applications: • drives
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SIGC18T60N
Q67041-A4690A001
320es
7242-E,
SIGC18T60N
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IXGR60N60C3C1
Abstract: G60N60 60N60C3 IF110 ISOPLUS247
Text: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES
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IXGR60N60C3C1
IC110
40-100kHz
247TM
IF110
60N60C3C1
IXGR60N60C3C1
G60N60
60N60C3
IF110
ISOPLUS247
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GP19NC60SD
Abstract: JESD97 STGP19NC60SD
Text: STGP19NC60SD N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60SD 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling
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STGP19NC60SD
O-220
GP19NC60SD
JESD97
STGP19NC60SD
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G60N60
Abstract: IF110 ISOPLUS247 IXGR60N60C3C1 I40-13 Ultra fast diode
Text: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES
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IXGR60N60C3C1
IC110
40-100kHz
ISOPLUS247TM
IF110
60N60C3C1
1-15-10-A
G60N60
IF110
ISOPLUS247
IXGR60N60C3C1
I40-13
Ultra fast diode
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SIGC18T60NC
Abstract: No abstract text available
Text: Preliminary SIGC18T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives
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SIGC18T60NC
Q67050-A4139A001
320in
7242-M,
SIGC18T60NC
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Untitled
Abstract: No abstract text available
Text: Preliminary SIGC18T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives
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SIGC18T60NC
Q67050-A4139sawn
1400e
7242-M,
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IXGH36N60B3C1
Abstract: IF110 g36n60b3c1 Schottky Diode 400V 15A
Text: Preliminary Technical Information IXGH36N60B3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES
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IXGH36N60B3C1
IC110
100ns
40kHz
O-247
36N60B3C1
IXGH36N60B3C1
IF110
g36n60b3c1
Schottky Diode 400V 15A
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGR60N60C3C1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES
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IXGR60N60C3C1
IC110
40-100kHz
ISOPLUS247TM
IF110
60N60C3C1
1-15-10-A
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GP19NC60S
Abstract: JESD97 STGP19NC60S
Text: STGP19NC60S N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60S 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling
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STGP19NC60S
O-220
GP19NC60S
JESD97
STGP19NC60S
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ixgh48n60c3c1
Abstract: IXGH48N60 48n60 IF110 48N60C3
Text: Preliminary Technical Information IXGH48N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 2.5V 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings
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IXGH48N60C3C1
IC110
100kHz
O-247
IF110
48N60C3C1
ixgh48n60c3c1
IXGH48N60
48n60
IF110
48N60C3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXGH48N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 2.5V 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C 600
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IXGH48N60C3C1
IC110
100kHz
O-247
IF110
48N60C3C1
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH48N60B3C1 = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IC110
IXGH48N60B3C1
116ns
O-247
IF110
48N60B3C1
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g60n
Abstract: 60N60C
Text: GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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IXGR60N60C3D1
IC110
IF110
60N60C3
01-15-10-E
g60n
60N60C
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mosfet 1200V 40A
Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA
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LC-96585
O-252AA
HGTD3N60A4S
O-220AB
O-263AB
O-247
O-264AA
O-268AA
HGTD3N60C3S
HGT1S3N60A4S*
mosfet 1200V 40A
igbt 20A 1200v
Igbts guide
mosfet 1200V 30a smps
HGTG11N120CND
MOSFET 1200v 30a
HGTD3N60A4S
HGTP20N60A4
igbt 1200V 60A
HGTD3N60B3S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 20A/600V IGBT
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MIG20J805H
0A/600V
0A/800V
961001EAA1
iiRS13
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage : 30 20A/600V IGBT
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MIG20J805H
0A/600V
0A/800V
961001EAA1
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P channel 600v 20a IGBT
Abstract: IGBT 800v 20a N channel 600v 20a IGBT
Text: TOSHIBA TENTATIVE MIG20J805 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : Z<j> 20A/600V IGBT
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MIG20J805
0A/600V
961001EAA1
--15V
P channel 600v 20a IGBT
IGBT 800v 20a
N channel 600v 20a IGBT
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DC 300V to 15V converter
Abstract: igbt 600v 20a MIG20J805H n channel 600v 20a IGBT toshiba a 200 inverter P channel 600v 20a IGBT
Text: TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage : Z<j> 20A/600V IGBT
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MIG20J805H
0A/600V
0A/800V
2-81B1A
961001EAA1
DC 300V to 15V converter
igbt 600v 20a
MIG20J805H
n channel 600v 20a IGBT
toshiba a 200 inverter
P channel 600v 20a IGBT
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P channel 600v 20a IGBT
Abstract: MIG toshiba IGBT 800v 20a mig20j
Text: TOSHIBA TENTATIVE MIG20J855 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG 2 0J855 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : Z<j> 20A/600V IGBT
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MIG20J855
0J855
0A/600V
2-81B1A
961001EAA1
--15V
P channel 600v 20a IGBT
MIG toshiba
IGBT 800v 20a
mig20j
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P channel 600v 20a IGBT
Abstract: MIG20J805 N channel 600v 20a IGBT IGBT 800v 20a
Text: T O SH IB A TENTATIVE MIG20J805 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3y5 20A/600V IGBT
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MIG20J805
0A/600V
0A/800V
2-81B1A
961001EAA1
P channel 600v 20a IGBT
MIG20J805
N channel 600v 20a IGBT
IGBT 800v 20a
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage : 3y5 20A/600V IGBT
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MIG20J805H
0A/600V
961001EAA1
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