Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IGBT 500V 1A Search Results

    IGBT 500V 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 500V 1A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor c644

    Abstract: C641 transistor C644 transistor C645 transistor IRGP440UD2 igbt 500V 15A transistor 2a 20v 5w transistor C641
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		IRGP440UD2 O-247AC C-648 transistor c644 C641 transistor C644 transistor C645 transistor IRGP440UD2 igbt 500V 15A transistor 2a 20v 5w transistor C641 PDF

    C644 transistor

    Abstract: C645 transistor transistor c644 diode C646 transistor C641 igbt 500V 15A C644 C646 C641 transistor IRGP440UD2
    Text: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGP440UD2 O-247AC C-648 C644 transistor C645 transistor transistor c644 diode C646 transistor C641 igbt 500V 15A C644 C646 C641 transistor IRGP440UD2 PDF

    22a ic

    Abstract: D-12 IRGB440U Insulated Gate Bipolar Transistors pec 632
    Text: PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGB440U O-220AB O-220 C-592 22a ic D-12 IRGB440U Insulated Gate Bipolar Transistors pec 632 PDF

    igbt 500V 22A

    Abstract: D-12 IRGB440U irgb440
    Text: PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGB440U O-220AB 100in O-220 C-592 igbt 500V 22A D-12 IRGB440U irgb440 PDF

    C644 transistor

    Abstract: C641 transistor transistor c644 transistor C641 IRGP440UD2 C646 diode 400v 2A ultrafast
    Text: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGP440UD2 O-247AC C-648 C644 transistor C641 transistor transistor c644 transistor C641 IRGP440UD2 C646 diode 400v 2A ultrafast PDF

    c609 transistor

    Abstract: GC 607 TRANSISTOR transistor C607 c608 A transistor IRGP440U C605 Q
    Text: PD - 9.779A IRGP440U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGP440U O-247AC C-610 c609 transistor GC 607 TRANSISTOR transistor C607 c608 A transistor IRGP440U C605 Q PDF

    igbt 500V 22A

    Abstract: 22a ic igbt 2A ic MARKING QG 7721-2A SCHEMATIC servo dc IGBTS igbt 500V 1A 280/TDA 7721 RECTIFIER BRIDGE 25A 600V 7721-1A
    Text: MODEL 7721 SERIES NEW PRODUCT H Bridge Power Module Drives DC motors, transformers and other loads. Paralleled ultrafast diodes included. Standard applications are off-line DC motor control and power conversion. MODELS/RANGE 7721-1A 7721-2A 22A 500V IGBTs with 8A 600V ultrafast diodes


    Original     		721-1A 721-2A O-220 O-247 igbt 500V 22A 22a ic igbt 2A ic MARKING QG 7721-2A SCHEMATIC servo dc IGBTS igbt 500V 1A 280/TDA 7721 RECTIFIER BRIDGE 25A 600V 7721-1A PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    AM 22A

    Abstract: igbt 2A GE 731 igbt 500V 22A
    Text: M O D E L 7 7 2 1 SERIES N EW PR O D U CT H Bridge Pow er Module Drives DC motors, transformers and other loads. Paralleled ultrafast diodes included. Standard applications are off-line DC motor control and power conversion. M O DELS/RA N G E 77 21 -1A 22 A 500V IGBTs with 8A 60 0V ultrafast diodes


    OCR Scan     		O-247 Rt/R25 721-1A AM 22A igbt 2A GE 731 igbt 500V 22A PDF

    IR igbt gate driver ic

    Abstract: rectifier diode 6 amp 400 volt igbt 500V 1A OM9034SF OM9035SF bridge rectifier diode 500V bridge rectifier ic pin configuration
    Text: OM9034SF OM9035SF HALF BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 30 And 25 Amp IGBT Module With Soft Recovery Rectifier, Half Bridge Configuration With Gate Drivers FEATURES • • • • • Hermetic Isolated Metal Package


    Original     		OM9034SF OM9035SF IR igbt gate driver ic rectifier diode 6 amp 400 volt igbt 500V 1A OM9034SF OM9035SF bridge rectifier diode 500V bridge rectifier ic pin configuration PDF

    Untitled

    Abstract: No abstract text available
    Text: 500V breakdown voltage Full bridge driver IC SPF5104 Positive driver system •Features ■Package Exclude gate remain dimension ●500V breakdown voltage positive power supply drive system ●Adopt bootstrap circuit system ●Encapsulate MOSFET (4pieces) and a control MIC


    Original     		SPF5104 PDF

    IRF540 n-channel MOSFET

    Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
    Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.


    OCR Scan     		QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R PDF

    stepper motor driver full bridge 6A

    Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
    Text: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx


    Original     		BTW68/69 BF3506TV /10TV BHA/K3012TV 0-55A 00V/35A 000V/35A L4981A/B STW/Y/ExNA60 STTAxx06 stepper motor driver full bridge 6A mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge PDF

    IGBT TEST

    Abstract: igbt 500V 1A PVD75-6 thyristor inverter
    Text: TENTATIVE PIM MODULE PVD75PVD75-6 7.5KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 7.5kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage


    Original     		PVD75PVD75-6 PVD75-6 IGBT TEST igbt 500V 1A thyristor inverter PDF

    Gate Turn-off Thyristor 600V 20A

    Abstract: INVERTER 50 kW thyristor inverter igbt 500V 15A igbt 500V 1A ac Inverter 10 kw 15KW PVD150-6 snubber thyristor thyristor 15KW
    Text: TENTATIVE PIM MODULE PVD150PVD150-6 15KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 15kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage


    Original     		PVD150PVD150-6 PVD150-6 Gate Turn-off Thyristor 600V 20A INVERTER 50 kW thyristor inverter igbt 500V 15A igbt 500V 1A ac Inverter 10 kw 15KW snubber thyristor thyristor 15KW PDF

    11kw

    Abstract: 600V 100A thyristor thyristor inverter dc 3phase ac inverter circuit PVD110-6 snubber thyristor 100A gate turn-off thyristor igbt 500V 1A
    Text: TENTATIVE PIM MODULE PVD110PVD110-6 11KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 11kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage


    Original     		PVD110PVD110-6 PVD110-6 11kw 600V 100A thyristor thyristor inverter dc 3phase ac inverter circuit snubber thyristor 100A gate turn-off thyristor igbt 500V 1A PDF

    igbt 500V 50A

    Abstract: igbt 500V 1A PVD55-6 thyristor inverter
    Text: TENTATIVE PIM MODULE PVD55 PVD55-6 5.5KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 5.5kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage


    Original     		PVD55 PVD55-6 PVD55-6 igbt 500V 50A igbt 500V 1A thyristor inverter PDF

    24v 2a smps

    Abstract: smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R
    Text: C O M M U N I C A T I O N S P O W E R Taking Charge Batteries, Chargers and Chemistry Evolution in Communications by Tara Lynn Macdonald W HILE THERE ARE MANY alternative rechargeable systems, lead-acid batteries are still the primary choice. Compared with alternative solutions,


    Original     		95Vac 264Vac 1500-AEQ 144Vdc/10A. 138Vdc 60-cell, 24v 2a smps smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R PDF

    Untitled

    Abstract: No abstract text available
    Text: SHARP PC924 OPIC Photocoupler for IGBT Drive of Inverter PC924 St Lead forming type 1 type and taping reel type ( P ty p e) are also available. TUV ( VDE 0884 ) approved type is also available as an option. • Features ( P C 9 2 4 I/P C 9 2 4 P ) ■ Outline Dimensions


    OCR Scan     		PC924 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT 5.5 kW 200 V •回路図 CIRCUIT PVD55-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor


    Original     		PVD55-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT 7.5 kW 200 V •回路図 CIRCUIT PVD75-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor


    Original     		PVD75-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT 11 kW 200 V •回路図 CIRCUIT PVD110-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor


    Original     		PVD110-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT 15 kW 200 V •回路図 CIRCUIT PVD150-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor


    Original     		PVD150-6 PDF

    600V Current Sensing N-Channel IGBT

    Abstract: Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V
    Text: Œ ï ^ « 1 HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12A.600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r D S (O N) .0.27V


    OCR Scan     		HGTB12N60D1C TS-001AA O-220) 100ns HGTB12N60D1C 600V Current Sensing N-Channel IGBT Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V PDF