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    IGBT 500V 15A Search Results

    IGBT 500V 15A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 500V 15A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor c644

    Abstract: C641 transistor C644 transistor C645 transistor IRGP440UD2 igbt 500V 15A transistor 2a 20v 5w transistor C641
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		IRGP440UD2 O-247AC C-648 transistor c644 C641 transistor C644 transistor C645 transistor IRGP440UD2 igbt 500V 15A transistor 2a 20v 5w transistor C641 PDF

    c628 DIODE

    Abstract: IRGB430UD2 C628 transistor diode c631 transistor C629 C632 c626 diode
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		IRGB430UD2 O-220AB C-632 c628 DIODE IRGB430UD2 C628 transistor diode c631 transistor C629 C632 c626 diode PDF

    C639

    Abstract: transistor C639 transistor C640 c638 transistor c637 transistor transistor C635 transistor C636 c640 transistor transistor C639 w IRGP430UD2
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		IRGP430UD2 O-247AC C-640 C639 transistor C639 transistor C640 c638 transistor c637 transistor transistor C635 transistor C636 c640 transistor transistor C639 w IRGP430UD2 PDF

    transistor C618

    Abstract: c617 transistor transistor C624 C618 transistor c624 DIODE c619 DIODE IRGB420UD2
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1066 IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		IRGB420UD2 O-220AB C-624 transistor C618 c617 transistor transistor C624 C618 transistor c624 DIODE c619 DIODE IRGB420UD2 PDF

    transistor C632

    Abstract: igbt 500V 15A c632 DIODE c630 diode IRGB430UD2 C632
    Text: P D - 9.1067 bitemational [ïôr |Rectifier IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c es = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


    OCR Scan     		IRGB430UD2 O-220AB O-22QAB transistor C632 igbt 500V 15A c632 DIODE c630 diode IRGB430UD2 C632 PDF

    D-12

    Abstract: IRGB430U
    Text: PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGB430U O-220AB C-586 D-12 IRGB430U PDF

    C644 transistor

    Abstract: C645 transistor transistor c644 diode C646 transistor C641 igbt 500V 15A C644 C646 C641 transistor IRGP440UD2
    Text: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGP440UD2 O-247AC C-648 C644 transistor C645 transistor transistor c644 diode C646 transistor C641 igbt 500V 15A C644 C646 C641 transistor IRGP440UD2 PDF

    transistor C632

    Abstract: c628 DIODE igbt 500V 15A C628 transistor transistor c625 diode c631 IRGB430UD2 irgb430ud c627 DIODE
    Text: PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGB430UD2 O-220AB C-632 transistor C632 c628 DIODE igbt 500V 15A C628 transistor transistor c625 diode c631 IRGB430UD2 irgb430ud c627 DIODE PDF

    1000v bipolar transistor

    Abstract: IRGP420U 470 pF 400V
    Text: PD - 9.781 IRGP420U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGP420U 1000v bipolar transistor IRGP420U 470 pF 400V PDF

    transistor C639

    Abstract: C639 c638 transistor transistor C636 transistor C635 transistor C640 c638 diode c637 transistor c640 transistor transistor C639 w
    Text: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGP430UD2 O-247AC C-640 transistor C639 C639 c638 transistor transistor C636 transistor C635 transistor C640 c638 diode c637 transistor c640 transistor transistor C639 w PDF

    c638 transistor

    Abstract: C639 transistor C639 c637 transistor transistor C640 transistor C636 c63610 c640 transistor C633 transient transistor C635
    Text: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGP430UD2 O-247AC C-640 c638 transistor C639 transistor C639 c637 transistor transistor C640 transistor C636 c63610 c640 transistor C633 transient transistor C635 PDF

    IRGP420U

    Abstract: No abstract text available
    Text: PD - 9.781 IRGP420U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGP420U IRGP420U PDF

    igbt 500V 15A

    Abstract: IRGP430U
    Text: PD - 9.780 IRGP430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGP430U igbt 500V 15A IRGP430U PDF

    C644 transistor

    Abstract: C641 transistor transistor c644 transistor C641 IRGP440UD2 C646 diode 400v 2A ultrafast
    Text: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGP440UD2 O-247AC C-648 C644 transistor C641 transistor transistor c644 transistor C641 IRGP440UD2 C646 diode 400v 2A ultrafast PDF

    IRGB430UD2

    Abstract: diode c631 c627 DIODE c628 DIODE
    Text: PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		IRGB430UD2 O-220AB C-632 IRGB430UD2 diode c631 c627 DIODE c628 DIODE PDF

    C583

    Abstract: D-12 IRGB430U C586
    Text: PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		IRGB430U O-220AB C-586 C583 D-12 IRGB430U C586 PDF

    c617 transistor

    Abstract: transistor C618 C618 transistor diode c624 c618 diode IRGB420UD2 c624 DIODE diode C622 transistor C624
    Text: PD - 9.1066 IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating f requency over 5kHz


    Original     		IRGB420UD2 O-220AB C-624 c617 transistor transistor C618 C618 transistor diode c624 c618 diode IRGB420UD2 c624 DIODE diode C622 transistor C624 PDF

    c596

    Abstract: IRGP420U C598
    Text: Previous Datasheet Index Next Data Sheet PD - 9.781A IRGP420U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz VCES = 500V See Fig. 1 for Current vs. Frequency curve


    Original     		IRGP420U O-247AC C-598 c596 IRGP420U C598 PDF

    transistor C618

    Abstract: c617 transistor C618 transistor c624 DIODE transistor C624 c623 DIODE diode c624 transistor c620 C620 diode c619 DIODE
    Text: PD - 9.1066 IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating f requency over 5kHz


    Original     		IRGB420UD2 O-220AB C-624 transistor C618 c617 transistor C618 transistor c624 DIODE transistor C624 c623 DIODE diode c624 transistor c620 C620 diode c619 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1064 bitemational ior Rectifier IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c e s = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    OCR Scan     		IRGP440UD2 4ASS452 0G20437 O-247AC PDF

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V PDF

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET PDF

    sla6805m

    Abstract: sma6823m washing machine electric circuit siemens bosch sma6822m bosch mp capacitor LG refrigerator whirlpool washing machine circuit lg washing machine control circuit bosch washing machine motor GE Refrigerator Compressor
    Text: Sanken High-Quality, High-Performance Power ICs From Allegro MicroSystems, Inc. Sanken Inverter Power Module Series 2007 September 29, 2007 Introduction of High Voltage IPM for Motor Drive Application ƒ For Small Capacity Use Up to 200W SMA, SLA (“A” and “B” in photo)


    Original     		PDF