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    IGBT 4500V Search Results

    IGBT 4500V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 4500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version Target Specification Unit in mm OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF MBN1200H45E2 000cycles)

    Hitachi DSA00281

    Abstract: MBN800
    Text: IGBT MODULE Spec.No.IGBT-SP-10014 R0 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-10014 MBN800H45E2 000cycles) Hitachi DSA00281 MBN800

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10004 R2 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.


    Original     		PDF IGBT-SP-10004 MBN800H45E2-H 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10004 R1 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-10004 MBN800H45E2-H 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10014 R1 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-10014 MBN800H45E2 000cycles)

    MBN1200H45E2-H

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-09017 MBN1200H45E2-H 000cycles) MBN1200H45E2-H

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08007 R6 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version FEATURES  Low conduction loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.  High thermal fatigue durability.


    Original     		PDF IGBT-SP-08007 MBN1200H45E2 000cycles)

    mbn800h45e2h

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-10004 R0 MBN800H45E2-H Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-10004 MBN800H45E2-H 000cycles) mbn800h45e2h

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09017 R7 MBN1200H45E2-H Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. ∗ High thermal fatigue durability.


    Original     		PDF IGBT-SP-09017 MBN1200H45E2-H 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09017 R8 MBN1200H45E2-H Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.  High thermal fatigue durability.


    Original     		PDF IGBT-SP-09017 MBN1200H45E2-H 000cycles)

    MBN1200H45

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-08007 R6 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. ∗ High thermal fatigue durability.


    Original     		PDF IGBT-SP-08007 MBN1200H45E2 000cycles) MBN1200H45

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12010 R1 MBM200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  Isolated heat sink terminal to base .


    Original     		PDF IGBT-SP-12010 MBM200H45E2-H

    MBN1200H45E2

    Abstract: Hitachi DSA00281
    Text: IGBT MODULE Spec.No.IGBT-SP-08007 R4 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version Target Specification Unit in mm OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-08007 MBN1200H45E2 000cycles) MBN1200H45E2 Hitachi DSA00281

    MBN1200H45E2

    Abstract: MBN1200H45
    Text: IGBT MODULE Spec.No.IGBT-SP-08007 R3 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version Target Specification Unit in mm OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-08007 MBN1200H45E2 000cycles) MBN1200H45E2 MBN1200H45

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor

    DCR370T

    Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches


    Original     		PDF 4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD1200S45KL3_B5 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 4500V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen • Hochleistungsumrichter


    Original     		PDF DD1200S45KL3

    FZ1200R45KL3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1200R45KL3_B5 VCES = 4500V


    Original     		PDF FZ1200R45KL3

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes

    DTS 423

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R45KL3_B5 VCES = 4500V


    Original     		PDF FZ800R45KL3 DTS 423

    DCR2950W

    Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A

    norfolk capacitors

    Abstract: IGCT thyristor GC2663 GC2672 NCL capacitor NCL GTO Thyristor protection capacitor snubbers norfolk IGCT GC2661 4500v
    Text: Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page IGCT Protection Capacitors ~ tables Next Page Home Page 4000V - 4500V - 6000V


    Original     		PDF GC2661 GC2662 GC2663 GC2681 GC2682 GC2683 GC2684 GC2685 GC2686 GC2687 norfolk capacitors IGCT thyristor GC2663 GC2672 NCL capacitor NCL GTO Thyristor protection capacitor snubbers norfolk IGCT GC2661 4500v

    DCR2950W

    Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. DCR2950W igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor

    NCL capacitor

    Abstract: GT2588 norfolk capacitors GT2593 NCL capacitor gt1847 NCL GTO Thyristor protection capacitor GT2587 snubbers norfolk GT1849 IGCT capacitor
    Text: Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page GTO Protection Capacitors~ tables Next Page 1800V - 2000V - 2500V - 2600V - 3300V - 3600V - 4000V - 4500V - 6000V - 7200V


    Original     		PDF GT1846 GT1847 GT2586 GT2587 GT2588 GT2589 GT2590 GT2591 GT2592 GT2593 NCL capacitor GT2588 norfolk capacitors GT2593 NCL capacitor gt1847 NCL GTO Thyristor protection capacitor GT2587 snubbers norfolk GT1849 IGCT capacitor