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    IGBT 3300V 250A Search Results

    IGBT 3300V 250A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 3300V 250A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12023 R1 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


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    IGBT-SP-12023 MBM250H33E3 PDF

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    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-12023 R3 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


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    IGBT-SP-12023 MBM250H33E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM250PKM33-TL000 IGBT Chopper Module DS6117-1 July 2013 LN30666 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


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    DIM250PKM33-TL000 DS6117-1 LN30666) PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 LN30664 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


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    DIM250PLM33-TL000 DS6115-1 LN30664) PDF

    DIM250PKM33-TL000

    Abstract: DIM250PKM33-TL
    Text: DIM250PKM33-TL000 IGBT Chopper Module DS6117-1 July 2013 LN30666 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


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    DIM250PKM33-TL000 DS6117-1 LN30666) 1200Vnames DIM250PKM33-TL000 DIM250PKM33-TL PDF

    DIM250PLM33-TL000

    Abstract: DIM250PLM33-TL
    Text: DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 LN30664 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


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    DIM250PLM33-TL000 DS6115-1 LN30664) DIM250PLM33-TL000 DIM250PLM33-TL PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM250PLM33-TS000 IGBT Chopper Module DS6108-1 June 2013 LN30636 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates


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    DIM250PLM33-TS000 DS6108-1 LN30636) 240names PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 LN30763 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK)


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    DIM250PKM33-TS000 DS6106-1 DS6106-2 LN30763) PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-1 DS6108-2 July 2013 LN30764 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK)


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    DIM250PLM33-TS000 DS6108-1 DS6108-2 LN30764) PDF

    DIM250PLM33-TS000

    Abstract: DIM250PLM33-TS
    Text: DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-2 DS6108-3 September 2014 LN31958 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)


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    DIM250PLM33-TS000 DS6108-2 DS6108-3 LN31958) 65names DIM250PLM33-TS000 DIM250PLM33-TS PDF

    DIM250PKM33-TS000

    Abstract: DIM250PKM33-TS
    Text: DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-2 DS6106-3 September 2014 LN31959 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)


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    DIM250PKM33-TS000 DS6106-2 DS6106-3 LN31959) 65names DIM250PKM33-TS000 DIM250PKM33-TS PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM250PKM33-TS000 IGBT Chopper Module DS6106-1 June 2013 LN30634 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates


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    DIM250PKM33-TS000 DS6106-1 LN30634) 240names PDF

    IGBT 3300V 250A

    Abstract: DIM250WKS06-S000 DIM250WKS06 DIM250WLS06-S000 DIM250WKLS06-S000 ups 700 600V dc IGBT
    Text: DIM250WLS06-S000 DIM250WLS06-S000 IGBT Chopper Module Lower Arm Control PDS5731-1.0 February 2004 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE(sat)* (typ) ■ Low Forward Voltage Drop (max) 250A Isolated Base IC ■ IC(PK) (max) 500A


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    DIM250WLS06-S000 PDS5731-1 DIM250WKS06-S000 IGBT 3300V 250A DIM250WKS06 DIM250WLS06-S000 DIM250WKLS06-S000 ups 700 600V dc IGBT PDF

    DIM250WKS06-S000

    Abstract: IGBT 3300V 250A DIM250WKS06 pwm ac chopper CIRCUIT DIAGRAM UPS bi-directional switches IGBT C 3886 DC MOTOR SPEED CONTROL USING chopper DC MOTOR SPEED CONTROL USING IGBT dc to dc chopper using igbt
    Text: DIM250WKS06-S000 DIM250WKS06-S000 IGBT Chopper Module Upper Arm Control PDS5730-1.0 February 2004 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE(sat)* (typ) ■ Low Forward Voltage Drop (max) 250A Isolated Base IC ■ IC(PK) (max) 500A


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    DIM250WKS06-S000 PDS5730-1 DIM250WKS06-S000 IGBT 3300V 250A DIM250WKS06 pwm ac chopper CIRCUIT DIAGRAM UPS bi-directional switches IGBT C 3886 DC MOTOR SPEED CONTROL USING chopper DC MOTOR SPEED CONTROL USING IGBT dc to dc chopper using igbt PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 LN30402 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 


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    DIM250PHM33-TS000 DS6092-1 LN30402) PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 LN30402 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 


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    DIM250PHM33-TS000 DS6092-1 LN30402) PDF

    DIM250PHM33-TS000

    Abstract: DIM250PHM33-TS
    Text: DIM250PHM33-TS000 Half Bridge IGBT Module Replaces DS6092-1 DS6092-2 September 2014 LN31957 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC


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    DIM250PHM33-TS000 DS6092-1 DS6092-2 LN31957) DIM250PHM33-TS000 DIM250PHM33-TS PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 LN30665 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


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    DIM250PHM33-TL000 DS6116-1 LN30665) PDF

    igbt 1500A

    Abstract: igbt dc to dc chopper control circuit diagram IGBT module 700a M6 transistor IGBT 3300V 250A
    Text: GP250MLS06S GP250MLS06S IGBT Chopper Module Preliminary Information DS5570-1.1 November 2002 FEATURES KEY PARAMETERS • Low Side Chopper Switch VCES ■ n - Channel IGBT VCE sat * (typ) ■ Isolated Base IC25 (max) 350A IC75 (max) 250A IC(PK) (max) 700A APPLICATIONS


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    GP250MLS06S DS5570-1 GP250MLS06S igbt 1500A igbt dc to dc chopper control circuit diagram IGBT module 700a M6 transistor IGBT 3300V 250A PDF

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    Abstract: No abstract text available
    Text: GP250MLS06S GP250MLS06S IGBT Chopper Module DS5570-1.1 November 2002 FEATURES KEY PARAMETERS • Low Side Chopper Switch VCES ■ n - Channel IGBT VCE sat * (typ) ■ Isolated Base IC25 (max) 350A IC75 (max) 250A IC(PK) (max) 700A APPLICATIONS ■ Choppers


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    GP250MLS06S DS5570-1 GP250MLS06S PDF

    Untitled

    Abstract: No abstract text available
    Text: DIM125CHS06-S000 DIM125CHS06-S000 Half Bridge IGBT Module PDS5727-1.2 February 2004 FEATURES • n - Channel ■ High Switching Speed ■ Low Forward Voltage Drop ■ Isolated Base KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 600V 2.1V 125A 250A


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    DIM125CHS06-S000 PDS5727-1 DIM125CHS06-S000 PDF

    GP250MKS06S

    Abstract: No abstract text available
    Text: GP250MKS06S GP250MKS06S IGBT Chopper Module Preliminary Information DS5571-1.2 November 2002 FEATURES KEY PARAMETERS • High Side Chopper Switch VCES ■ n - Channel IGBT VCE sat * (typ) ■ Isolated Base IC25 (max) 350A IC75 (max) 250A IC(PK) (max) 700A


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    GP250MKS06S DS5571-1 GP250MKS06S PDF

    dc to dc chopper using igbt

    Abstract: GP250MKS06S
    Text: GP250MKS06S GP250MKS06S IGBT Chopper Module DS5571-1.2 November 2002 FEATURES KEY PARAMETERS • High Side Chopper Switch VCES ■ n - Channel IGBT VCE sat * (typ) ■ Isolated Base IC25 (max) 350A IC75 (max) 250A IC(PK) (max) 700A APPLICATIONS ■ Choppers


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    GP250MKS06S DS5571-1 GP250MKS06S dc to dc chopper using igbt PDF

    MJ 800

    Abstract: CIRCUIT DIAGRAM UPS IGBT 3300V 250A lm 3886 ac motor speed control circuit diagram with IGBT bi-directional switches IGBT DC MOTOR SPEED CONTROL USING IGBT HALF BRIDGE MOTOR MODULE IC 4022 ups circuit diagram using igbt
    Text: DIM250WHS06-S000 DIM250WHS06-S000 Half Bridge IGBT Module PDS5676-1.3 February 2004 FEATURES KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 250A Isolated Base IC ■ IC(PK) (max) 500A APPLICATIONS


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    DIM250WHS06-S000 PDS5676-1 DIM250WHS06-S000 MJ 800 CIRCUIT DIAGRAM UPS IGBT 3300V 250A lm 3886 ac motor speed control circuit diagram with IGBT bi-directional switches IGBT DC MOTOR SPEED CONTROL USING IGBT HALF BRIDGE MOTOR MODULE IC 4022 ups circuit diagram using igbt PDF