IXGN400N30A3
Abstract: Aluminium nitride
Text: IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching VCES = 300V IC25 = 400A VCE sat ≤ 1.15V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN400N30A3
10kHz
OT-227B,
E153432
IC110
400N30A3
1-18-08-A
IXGN400N30A3
Aluminium nitride
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Untitled
Abstract: No abstract text available
Text: VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN400N30A3
10kHz
OT-227B,
E153432
IC110
400N30A3
1-18-08-A
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IXGN400N60A3
Abstract: 400N30A3 IXGN400N30A3
Text: IXGN400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra Low Vsat PT IGBT for up to 10kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN400N30A3
10kHz
OT-227B,
E153432
IC110
400N30A3
1-18-08-A
IXGN400N60A3
IXGN400N30A3
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FGA90N30D
Abstract: No abstract text available
Text: FGA90N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.
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FGA90N30D
FGA90N30D
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igbt 300v data sheet
Abstract: igbt 300V 10A datasheet FGA120N30D
Text: FGA120N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.
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FGA120N30D
FGA120N30D
igbt 300v data sheet
igbt 300V 10A datasheet
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Untitled
Abstract: No abstract text available
Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.
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FGA180N30D
FGA180N30D
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Untitled
Abstract: No abstract text available
Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.
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FGA180N30D
FGA180N30D
FGA180N30DTU
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fga120n30d
Abstract: No abstract text available
Text: FGA120N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.
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FGA120N30D
FGA120N30D
40ild
FGA120N30DTU
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Untitled
Abstract: No abstract text available
Text: FGA90N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.
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FGA90N30D
FGA90N30D
FGA90N30DTU
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igbt 300V 10A datasheet
Abstract: FGA180N30D IGBT 40A
Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.
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FGA180N30D
FGA180N30D
igbt 300V 10A datasheet
IGBT 40A
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FGA120N30D
Abstract: No abstract text available
Text: FGA120N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.
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FGA120N30D
FGA120N30D
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igbt 300V 10A datasheet
Abstract: c3228 FGA180N30D
Text: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.
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FGA180N30D
FGA180N30D
igbt 300V 10A datasheet
c3228
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igbt 300V 10A datasheet
Abstract: FGA90N30D
Text: FGA90N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.
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FGA90N30D
FGA90N30D
igbt 300V 10A datasheet
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igbt 300V 10A datasheet
Abstract: igbt 200v 20a FGFP30N30DTU FGPF30N30D RG601 igbt 200v 30a
Text: FGPF30N30D 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30D offers the optimum solution for PDP applications where lowcondution loss is essential.
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FGPF30N30D
O-220F
igbt 300V 10A datasheet
igbt 200v 20a
FGFP30N30DTU
FGPF30N30D
RG601
igbt 200v 30a
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igbt 300V 30A
Abstract: igbt 300V 10A datasheet FGPF30N30TD igbt 200v 20a
Text: FGPF30N30TD tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF30N30TD
O-220F
FGPF30N30TD
igbt 300V 30A
igbt 300V 10A datasheet
igbt 200v 20a
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FGPF70N30TD
Abstract: igbt 300V 10A datasheet
Text: FGPF70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF70N30TD
O-220F
FGPF70N30TD
igbt 300V 10A datasheet
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igbt 150v 30a
Abstract: 7464 ic datasheet 60A 150V IGBT
Text: TYPICAL PERFORMANCE CURVES APT60GU30B APT60GU30S APT60GU30B_S 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT60GU30B
APT60GU30S
O-247
igbt 150v 30a
7464 ic datasheet
60A 150V IGBT
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IXGX400N30A3
Abstract: IXGK400N30A3 PLUS247 ixgx400
Text: IXGK400N30A3 IXGX400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300
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IXGK400N30A3
IXGX400N30A3
10kHz
O-264
IC110
400N30A3
1-18-08-A
IXGX400N30A3
IXGK400N30A3
PLUS247
ixgx400
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Untitled
Abstract: No abstract text available
Text: GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGK400N30A3 IXGX400N30A3 Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300
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IXGK400N30A3
IXGX400N30A3
10kHz
O-264
IC110
400N30A3
1-18-08-A
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200N30PB
Abstract: 200n30
Text: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGH100N30B3
100Turn-off
200N30PB
7-05-08-D
200n30
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200N30PB
Abstract: IXGH100N30B3 200n3 200n30
Text: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGH100N30B3
200N30PB
7-05-08-D
IXGH100N30B3
200n3
200n30
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous
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IXGH100N30C3
IC110
50-150kHz
O-247
100N30C3
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IXGH100N30C3
Abstract: 100N30 100N30C3
Text: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous
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IXGH100N30C3
IC110
50-150kHz
O-247
100N30C3
IXGH100N30C3
100N30
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Untitled
Abstract: No abstract text available
Text: Power Module 600V 200A IGBT Module MG06200S-BN4MM RoHS Features • H igh short circuit capability, self limiting short circuit current • F ree wheeling diodes with fast and soft reverse recovery • V CE sat with positive temperature coefficient
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MG06200S-BN4MM
E71639
MG06200
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