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    IGBT 3 KA 3.3KV Search Results

    IGBT 3 KA 3.3KV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 3 KA 3.3KV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6.5kV IGBT

    Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
    Text: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany


    Original     		PDF D-59581 D-85579 6.5kV IGBT 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


    Original     		PDF

    FZ1200R33KF1

    Abstract: igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv
    Text: Application and Characteristics of High Voltage IGBT Modules M.Hierholzer, eupec GmbH & Co KG, Warstein, Germany A.Porst, Th.Laska, H.Brunner, Siemens AG, München, Germany New IGBT modules with blocking voltage of 3300V and current capability up to 1200A became


    Original     		PDF 200V/1600V FZ1200R33KF1 FZ1200R33KF1 igbt 500V 2A IGBT 3.3kv eupec igbt 3.3kv siemens IGBT 600a Brunner IGBT FZ1200 HIGH VOLTAGE DIODE 3.3kv

    BUSBAR calculation

    Abstract: BUSBAR calculation datasheet calculation of IGBT snubber 3 level inverter 3 phase motor inverters circuit diagram igbt 3 phase inverters circuit diagram igbt DC Link capacitor calculation design dc link inverter IGBT inverter calculation inductances types
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Design Aspects for Inverters with IGBT High Power Modules Dr.-Ing. Th. Schütze, eupec GmbH & Co KG, Warstein, Germany Abstract With regard to the blocking ability and efficiency of the new 3.3 kV IGBT high voltage modules IHV with nominal


    Original     		PDF

    1287-standard

    Abstract: SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit HIGH VOLTAGE DIODE 3.3kv "DATA MATRIX" EUPEC
    Text: Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin Hierholzer eupec GmbH & Co. KG Max-Planck-Straße 5 59581 Warstein, Germany Abstract- This paper gives a survey of the measures and the resulting improvements of IGBT module reliability


    Original     		PDF

    HIGH VOLTAGE DIODE 3.3kv

    Abstract: 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv
    Text: New 3300V High Power Emcon-HDR Diode with High Dynamic Robustness J. Biermann1 , K.-H. Hoppe1), O. Schilling1), J.G. Bauer2), A. Mauder2), E. Falck2), H.-J. Schulze2), H. Rüthing2), G. Achatz3) 1 2 eupec GmbH, Max-Planck-Straße, D-59581 Warstein, Germany


    Original     		PDF D-59581 D-81541 HIGH VOLTAGE DIODE 3.3kv 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv