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    IGBT 25A TOSHIBA Search Results

    IGBT 25A TOSHIBA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 25A TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG25Q2YS40

    Abstract: igbt 25A toshiba diode bridge toshiba Toshiba bridge diode TOSHIBA IGBT toshiba power module
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 0.5µs Max. trr = 0.5µs (Max.)


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    PDF MG25Q2YS40 PW03790796 MG25Q2YS40 igbt 25A toshiba diode bridge toshiba Toshiba bridge diode TOSHIBA IGBT toshiba power module

    igbt 25A toshiba

    Abstract: TOSHIBA IGBT 25A
    Text: MG25J1BS11 TOSHIBA TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATION. MOTOR CONTROL APPLICATIONS. High Input Impedance tf —1.0 "S Max. (Iq = 25A) High Speed Low Saturation Voltage : V 0 E(sat) = 2.7V (Max.) (Ic = 25A)


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    PDF MG25J1BS11 igbt 25A toshiba TOSHIBA IGBT 25A

    MG25J1BS11

    Abstract: No abstract text available
    Text: TOSHIBA MG25J1BS11 TOSHIBA GTR MODULE SILICON N - CHANNEL IGBT MG25J1BS11 U nit in HIGH POWER SWITCHING APPLICATION. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0,us M ax. (lQ = 25A) Low Saturation Voltage : VcE(sat) = 2-7V (Max.) (Ic = 25A)


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    PDF MG25J1BS11 MG25J1BS11

    MG25J1BS11

    Abstract: tcp 8005
    Text: MG25J1BS11 TOSHIBA MG25J1BS11 TOSHIBA GTR MODULE SILICON N -C H A N N EL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATION. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= 1.0/^s Max. (I0 = 25A) Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 25A)


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    PDF MG25J1BS11 2-33F1A 100il MG25J1BS11 tcp 8005

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG25J1BS11 TOSHIBA GTR MODULE SILICON N-CHAN NEL IGBT M G 2 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATION. MOTOR CONTROL APPLICATIONS. U nit in mm High Input Impedance High Speed : tf= 1.0/^s Max. (Iç; = 25A) Low Saturation Voltage : VCE(sat) = 2.7V (Max.) (Iç = 25A)


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    PDF MG25J1BS11

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG25J1BS11 TOSHIBA GTR MODULE SILICON N-CHAN NEL IGBT M G 2 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATION. MOTOR CONTROL APPLICATIONS. U nit in mm High Input Impedance High Speed : tf= 1.0/^s Max. (Iç; = 25A) Low Saturation Voltage : VCE(sat) = 2.7V (Max.) (Iç = 25A)


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    PDF MG25J1BS11

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25J6ES40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35ns Max. (Ic = 25A) • Low saturation voltage:


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    PDF MG25J6ES40 TCn72SQ 002ni3 PW03050796

    ED 115G

    Abstract: P channel 1200v 25a IGBT MIG25Q804H
    Text: TOSHIBA TENTATIVE MIG25Q804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG25Q804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage


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    PDF MIG25Q804H 5A/1200V 0A/1600V 9610Q1EAA1 --10V ED 115G P channel 1200v 25a IGBT MIG25Q804H

    P channel 1200v 25a IGBT

    Abstract: No abstract text available
    Text: TOSHIBA MIG25Q906H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT M IG25Q906H, M IG 25Q 906H A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.


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    PDF MIG25Q906H/HA IG25Q906H, 5A/1200V 0A/1600V MIG25Q906H 2-108E3A MIG25Q906HA 2-108E4A 961001EA 10//S P channel 1200v 25a IGBT

    ic ma 8910

    Abstract: MIG50Q201H TLP559
    Text: TOSHIBA M IG50Q201H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MIG50Q201H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units


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    PDF MIG50Q201H 2-110A1A ic ma 8910 MIG50Q201H TLP559

    TLP559

    Abstract: MIG75Q202H
    Text: TOSHIBA MIG75Q202H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MIG75Q202H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, Realtime-Current-Control (RTC , Under-Voltage & Over-Temperature) in One


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    PDF MIG75Q202H 2-110A1A TLP559 MIG75Q202H

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MIG75Q202H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MIG75Q202H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units


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    PDF MIG75Q202H 2-110A1A IG75Q202H 2130S

    P channel 1200v 25a IGBT

    Abstract: No abstract text available
    Text: TOSHIBA MIG25Q906H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT M IG25Q906H, M IG 25Q 906H A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, C onverter and Brake Pow er C ircuits and Therm istor in One Package.


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    PDF MIG25Q906H/HA MIG25Q906H, MIG25Q906HA /l200V /l600V 2-108E3A 2-108E4A 961001EA P channel 1200v 25a IGBT

    MIG25Q901H

    Abstract: No abstract text available
    Text: TOSHIBA INTEGRATED GTR MODULE MIG25Q901H High Power Switching Applications Motor Control Applications • Integrates Inverter, Converter and Brake Power Circuits in One Package. • Output Inverter Stage 3025A/1200V High Speed Type IGBT V c E (s a t) = 4.0V (Max.)


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    PDF MIG25Q901H 025A/1200V 50jis 015A/16OOV A/1200V PW02160796 MIG25Q901H

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MIG50Q 201H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MIG50Q201H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, Realtime-Current-Control (RTC , Under-Voltage & Over-Temperature) in One


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    PDF MIG50Q MIG50Q201H 2-110A1A IG50Q

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MIG50Q201H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT MIG50Q201 H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units


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    PDF MIG50Q201H MIG50Q201 21/us 2-110A1A IG50Q201H 0G212Ã

    MIG50J901H

    Abstract: TCH7247 MIG50J90 jm01
    Text: TOSHIBA INTEGRATED GTR MODULE MIG50J901H Unit in mm High Power Switching Applications Motor Control Applications • Integrates Inverter. Converter and Brake Power Circuits in One Package. • Output Inverter Stage 305OA/6OOV High Speed Type IGBT VCE(sat) = 4.0V (Max.)


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    PDF MIG50J901H 305OA/6OOV 15jis 303OA/8OOV 5A/600V 2-99B1A TjS12S TCH7247 MIG50J901H MIG50J90 jm01

    1-P1112

    Abstract: M1G5 Toshiba mIG50Q201H
    Text: TOSHIBA MIG50Q201 H MIG50Q201H TO SH IBA INTELLIGENT GTR M O D ULE SILICON N CHANNEL IGBT HIGH P O W E R SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units


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    PDF MIG50Q201 MIG50Q201H 21/iS 2-110A1A TjSl25dC 1-P1112 M1G5 Toshiba mIG50Q201H

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MIG75Q202H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT m i r, 7 MT•; n 7 n 9 h ■■ ■WH ■ m HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units


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    PDF MIG75Q202H 21/js 2-110A1A

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE MG25Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


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    PDF MG25Q6ES50A MG25Q ES50A 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MG25Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tj’=0.3/^s Max. @ Inductive Load Low Saturation Voltage : v CE(sat) = 3-o v (Max.)


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    PDF MG25Q6ES50 9610Q1EAA1

    50Q201H

    Abstract: No abstract text available
    Text: T O SH IB A MIG 50Q 201H TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT Mifiinn^m h • « ■ ■ M gr ^MT ■ ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units


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    PDF 2-110A1A TjS125 50Q201H

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG25Q6ES50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf = 0 .3 ^ 3 Max. Inductive Load • Low Saturation Voltage ; V CE (sat) = 3-OV (Max.)


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    PDF MG25Q6ES50A 961001EAA1 --10V

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE m . a^ ^7 ^r HIGH POWER SWITCHING APPLICATIONS nX SILICON N CHANNEL IGBT ES 50A MOTOR CONTROL APPLICATIONS • • • • • t High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage


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    PDF MG25Q6ES50A 961001EAA1