600v 15a
Abstract: igbt 600v 6mbi 6MBI 15LS-060 IGBT 600V 15A
Text: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A
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15LS-060
600v 15a
igbt 600v
6mbi
6MBI 15LS-060
IGBT 600V 15A
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600v
Abstract: igbt igbt 600V
Text: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 972 733-1700 - www.fujisemiconductor.com
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15LS-060
600v
igbt
igbt 600V
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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Untitled
Abstract: No abstract text available
Text: 6MBP15RH060 IGBT-IPM R series IGBT Modules 600V / 15A / 6 in one-package • Features • Low power loss and soft switching • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in
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6MBP15RH060
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6MBP15RH060
Abstract: IGBT THEORY AND APPLICATIONS dc servo igbt diagram 6MBP15RH-060
Text: 6MBP15RH060 IGBT-IPM R series IGBT Modules 600V / 15A / 6 in one-package • Features • Low power loss and soft switching • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in
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6MBP15RH060
6MBP15RH060
IGBT THEORY AND APPLICATIONS
dc servo igbt diagram
6MBP15RH-060
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igbt 600V
Abstract: 15LS-060 6MBI 15LS-060
Text: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com
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15LS-060
igbt 600V
15LS-060
6MBI 15LS-060
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Untitled
Abstract: No abstract text available
Text: APTGV15H120T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 15A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 15A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter
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APTGV15H120T3G
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APT0406
Abstract: APT0502 APTGV15H120T3G thermistor ntc r1
Text: APTGV15H120T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 15A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 15A @ Tc = 80°C Q3 11 • Solar converter
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APTGV15H120T3G
APT0406
APT0502
APTGV15H120T3G
thermistor ntc r1
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Untitled
Abstract: No abstract text available
Text: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP60BDL
O-247
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Untitled
Abstract: No abstract text available
Text: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP60BDL
O-247
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APT15GP60BDL
Abstract: No abstract text available
Text: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP60BDL
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Untitled
Abstract: No abstract text available
Text: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP60BDL
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Untitled
Abstract: No abstract text available
Text: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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APT50GT120B2RDQ2G
50KHz
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Untitled
Abstract: No abstract text available
Text: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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APT50GT120B2RDQ2G
50KHz
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APT50GT120B2RDQ2G
Abstract: APT10078BLL 000241
Text: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
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APT50GT120B2RDQ2G
50KHz
Symb49
APT50GT120B2RDQ2G
APT10078BLL
000241
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mig15j
Abstract: 15j80
Text: TOSHIBA TENTATIVE M IG 15J805 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG15J805 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : Z<j> 15A/600V IGBT
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15J805
MIG15J805
5A/600V
961001EAA1
mig15j
15j80
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE M IG15J805 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG15J 8 0 5 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3y5 15A/600V IGBT
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IG15J805
MIG15J
5A/600V
961001EAA1
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ui02
Abstract: mig10Q vero GK 60
Text: TOSHIBA MIG10Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 10A/1200V IGBT
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MIG10Q805H
0A/1200V
/l600V
961001EAA1
ui02
mig10Q
vero GK 60
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG10Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT M IG10Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 10A/1200V IGBT
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MIG10Q805H
IG10Q805H
0A/1200V
/l600V
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •
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MIG5Q805H
A/1200V
/l600V
961001EAA1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •
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MIG5Q805H
A/1200V
/l600V
961001EA
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P channel 600v 20a IGBT
Abstract: MIG10Q805H
Text: MIG10Q805H TOSHIBA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 10A/ 1200V IGBT
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MIG10Q805H
5A/1600V
2-81B1A
961001EAA1
P channel 600v 20a IGBT
MIG10Q805H
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c531 diode
Abstract: diode C531 C532 diode C529 DIODE IRGTIN025M12 C529
Text: International kjrJRectifier PD-9.1166 IRGTIN025M12 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK •Rugged Design .Simple gate-drive .Switching-Loss Rating includes all “tail" losses .Short circuit rated Description IR's advanced IGBT technology is the key
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IRGTIN025M12
4ASS452
100nH
0Q20324
c531 diode
diode C531
C532 diode
C529 DIODE
IRGTIN025M12
C529
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