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    IGBT 1200V 40A SHORT CIRCUIT Search Results

    IGBT 1200V 40A SHORT CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd

    IGBT 1200V 40A SHORT CIRCUIT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    40MT120UH

    Abstract: No abstract text available
    Text: Bulletin I27126 rev. B 10/02 40MT120UH "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with


    Original     		I27126 40MT120UH E78996) 20KHz Para0MT120UH 40MT120UH PDF

    mosfet 1200V 40A

    Abstract: MOSFET 40A 600V ir igbt 1200V 40A DIODE 2800 igbt 1200V 40A short circuit igbt 40A 600V 4772 mosfet driver Diode 1200V 40A IGBT 600V 40A IGBT 600V 40A diode
    Text: PROVISIONAL PD - 94240 IRGPS40B120UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA


    Original     		IRGPS40B120UD Super-247 20KHz Super-247TM 5M-1994. O-274AA mosfet 1200V 40A MOSFET 40A 600V ir igbt 1200V 40A DIODE 2800 igbt 1200V 40A short circuit igbt 40A 600V 4772 mosfet driver Diode 1200V 40A IGBT 600V 40A IGBT 600V 40A diode PDF

    ir igbt 1200V 40A

    Abstract: IGBT 900V 80A 40MT120UH 40MT120UHT 1E-005 UJ-3600
    Text: I27126 rev. C 02/03 40MT120UH "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery


    Original     		I27126 40MT120UH E78996) 20KHz ir igbt 1200V 40A IGBT 900V 80A 40MT120UH 40MT120UHT 1E-005 UJ-3600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27126 rev. A 06/02 40MT120UH "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with


    Original     		I27126 40MT120UH E78996) 20KHz PDF

    ir igbt 1200V 40A

    Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
    Text: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package


    Original     		IRGPS40B120U Super-247 20KHz Super-247TM 5M-1994. O-274AA ir igbt 1200V 40A igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package PDF

    ir igbt 1200V 40A

    Abstract: 40MT120UHA 40MT120UHTA IGBT 900V 80A smd ic LM 338 smd diode Uj
    Text: Bulletin I27194 rev. A 01/06 40MT120UHA 40MT120UHTA "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with


    Original     		I27194 40MT120UHA 40MT120UHTA 20KHz ir igbt 1200V 40A 40MT120UHA 40MT120UHTA IGBT 900V 80A smd ic LM 338 smd diode Uj PDF

    smd diode Uj

    Abstract: No abstract text available
    Text: Bulletin I27194 03/05 40MT120UHA 40MT120UHTA "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with


    Original     		I27194 40MT120UHA 40MT120UHTA 20KHz smd diode Uj PDF

    JESD-022

    Abstract: SGW25N120 igbt sgw25n120
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original     		SGW25N120 SGW25N120 641-SGW25N120E8161 SGW25N120E8161 JESD-022 igbt sgw25n120 PDF

    gp15n120

    Abstract: SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 ir igbt 1200V 40A Diode 1S 2473
    Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


    Original     		SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 GP15N120 gp15n120 SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 ir igbt 1200V 40A Diode 1S 2473 PDF

    g25n120

    Abstract: PG-TO-247-3-1 PG-TO247-3-1 G25N120 TSC Q67040-S4277 sgw25n120 M/250w smps inverter circuits
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original     		SGW25N120 SGW25N120 g25n120 PG-TO-247-3-1 PG-TO247-3-1 G25N120 TSC Q67040-S4277 M/250w smps inverter circuits PDF

    SGW25N120

    Abstract: PG-TO-247-3 ir igbt 1200V 40A
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original     		SGW25N120 PG-TO-247-3 SGW25N120 PG-TO-247-3 ir igbt 1200V 40A PDF

    mosfet 1200V 40A

    Abstract: 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A
    Text: PD- 94295 IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C VCES = 1200V Features • • • • • Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE on Temperature Coefficient.


    Original     		IRGPS40B120U Super-247 Super-247TM 5M-1994. O-274AA mosfet 1200V 40A 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A PDF

    IRFPS37N50A

    Abstract: IRGPS40B120UP 312V marking code igbt 40a 600v
    Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		5899A IRGPS40B120UP Super-247 Super-247TM IRFPS37N50A IRFPS37N50A IRGPS40B120UP 312V marking code igbt 40a 600v PDF

    TRANSISTOR N 1380 600 300 SC

    Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
    Text: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		4295A IRGPS40B120U Super-247 Super-247TM 5M-1994. O-274AA TRANSISTOR N 1380 600 300 SC MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V PDF

    12v 30a smps

    Abstract: 250w smps SGW25N120 250w smps inverter circuits high current igbt
    Text: SGW25N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original     		SGW25N120 P-TO-247-3-1 O-247AC) O-247AC Q67040-S4277 Jul-02 12v 30a smps 250w smps SGW25N120 250w smps inverter circuits high current igbt PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 95899 IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		IRGPS40B120UP Super-247 Super-247â IRFPS37N50A IRFPS37N50A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		5899A IRGPS40B120UP Super-247 Super-247â IRFPS37N50A IRFPS37N50A PDF

    G40T120

    Abstract: No abstract text available
    Text: IGW40T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers :


    Original     		IGW40T120 G40T120 PDF

    sgw25n120

    Abstract: No abstract text available
    Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour


    Original     		SGW25N120 SGW25N120 PDF

    G40T120

    Abstract: JESD-022 IGW40T120 PG-TO-247-3 igbt 1200V 40A short circuit
    Text: IGW40T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology C • • • • • • • • • Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications


    Original     		IGW40T120 PG-TO-247-3 G40T120 JESD-022 IGW40T120 PG-TO-247-3 igbt 1200V 40A short circuit PDF

    gp15n120

    Abstract: SGP15N120 SGW15N120 igbt 1200V 20A PG-TO-247-3 PG-TO-220-3-1 1200v 20a IGBT ir igbt 1200V 10A
    Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 s • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


    Original     		SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 GP15N120 SGW15N1 gp15n120 SGP15N120 SGW15N120 igbt 1200V 20A PG-TO-247-3 PG-TO-220-3-1 1200v 20a IGBT ir igbt 1200V 10A PDF

    ic60a

    Abstract: No abstract text available
    Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution


    Original     		SGP15N120 SGW15N120 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW15N120 ic60a PDF

    mosfet 1200V 40A

    Abstract: *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRFPS37N50A IRGPS40B120U transistor 600v 500a 312V marking code l200h
    Text: PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		94295B IRGPS40B120U Super-247 Super-247TM Super-247TM IRFPS37N50A IRFPS37N50A mosfet 1200V 40A *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRGPS40B120U transistor 600v 500a 312V marking code l200h PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 94295C IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		94295C IRGPS40B120U Super-247 Super-247â IRFPS37N50A IRFPS37N50A PDF