C82 diode
Abstract: C81 diode
Text: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
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OCR Scan
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10kHz
GA150TD120U
150TD
C82 diode
C81 diode
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PDF
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diod t4
Abstract: p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A
Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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-50051D
GA400TD25S
10kHz
diod t4
p j 85 diod
GA400TD25S
t4 diod
INT-A-PAK Dual weight
diod 800A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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-50051D
GA400TD25S
10kHz
85ded
08-Mar-07
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PDF
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1515G
Abstract: GA250TD120U
Text: PD - 50054A GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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0054A
GA250TD120U
10kHz
1515G
GA250TD120U
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PDF
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GA250TD120U
Abstract: ic 501
Text: PD - 5.054 PRELIMINARY GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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GA250TD120U
10kHz
GA250TD120U
ic 501
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PDF
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GA400TD25S
Abstract: No abstract text available
Text: PD -50051C GA400TD25S "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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-50051C
GA400TD25S
10kHz
Colle52-7105
GA400TD25S
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PDF
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GA400TD25S
Abstract: No abstract text available
Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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Original
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-50051D
GA400TD25S
10kHz
12-Mar-07
GA400TD25S
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PDF
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irf 792
Abstract: GA400TD25S
Text: PD -5.051B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD25S Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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Original
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GA400TD25S
10kHz
irf 792
GA400TD25S
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PDF
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK PD'5051 G A 400TD 25S Standard Speed IGBT Features • Generation 4 IGBT technology V ces = 250V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
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OCR Scan
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400TD
10kHz
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PDF
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RG2 DIODE
Abstract: GA150TD120U DT12-6
Text: PD - 5.067A PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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Original
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GA150TD120U
10kHz
RG2 DIODE
GA150TD120U
DT12-6
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PDF
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hexfred
Abstract: No abstract text available
Text: International Rectifier I«R PD -5.051 B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD25S Standard Speed IGBT Features • Generation 4 IGBT technology V ces = 250V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
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OCR Scan
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GA400TD25S
10kHz
hexfred
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PDF
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LM 1709
Abstract: GA150TD120U DT12-6
Text: PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200 V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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GA150TD120U
10kHz
LM 1709
GA150TD120U
DT12-6
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PDF
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74hc06
Abstract: TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A
Text: 目录 各种功率半导体器件和IGBT IGBT模块电路构成 IGBT模块的额定值和特性 IGBT模块的损耗和散热设计 IGBT模块的门极驱动 上桥臂的驱动 3相供电VVVF变频器系统框图 IGBT元件的短路和过电压保护 IGBT元件的过电压保护缓冲电路
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PHMB400B12
PDMB100B12C
1/2LiC21/2Cse2
600V1
200A1
200V800AIGBT3
100kWIGBT
200A1200V800A
74hc06
TLP250
IGBT 10KHz
IR2171
ptmb50e6c
igbt rcd
SCR 207A
50A 1200V SCR
SCR 100A 1200V
Equivalent for SCR 207A
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PDF
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Untitled
Abstract: No abstract text available
Text: International I R Recti fi Gf PD - 5.054 PR ELIM IN A R Y G A250T D 120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V c e s = 12 0 0 V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
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OCR Scan
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A250T
10kHz
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PDF
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Sensitron Semiconductor
Abstract: 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B
Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.3 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G060-120D
Sensitron Semiconductor
210C
DS34C87
SFH6186-4
SPM6G060-120D
SPM6G060-120D-B
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PDF
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IC53A
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G060-120D
IC53A
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PDF
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IGBT 500V 35A
Abstract: power supply switching 24-2 OPTO ISOLATOR high temperature 210C DS34C87 SFH6186-4 SPM6G060-120D 10000Watt
Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G060-120D
IGBT 500V 35A
power supply switching 24-2
OPTO ISOLATOR high temperature
210C
DS34C87
SFH6186-4
SPM6G060-120D
10000Watt
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PDF
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2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM
Abstract: DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D
Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G070-060D
2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM
DS34C87
LIN opto isolator
SFH6186-4
SPM6G070-060D
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PDF
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5000watt
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G060-120D
5000watt
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PDF
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C 4977
Abstract: ON 4977 SPM6G140-060D
Text: SENSITRON _ SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G140-060D
125oC
C 4977
ON 4977
SPM6G140-060D
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PDF
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2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM
Abstract: SPM6G070-060D 210C DS34C87 SFH6186-4
Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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SPM6G070-060D
2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM
SPM6G070-060D
210C
DS34C87
SFH6186-4
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PDF
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SPM6G070-060D
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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Original
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SPM6G070-060D
SPM6G070-060D
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PDF
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C 4977
Abstract: 50 amp igbt 210C DS34C87 SFH6186-4 SPM6G140-060D ON 4977
Text: SENSITRON _ SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. A.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
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Original
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SPM6G140-060D
C 4977
50 amp igbt
210C
DS34C87
SFH6186-4
SPM6G140-060D
ON 4977
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PDF
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power supply switching
Abstract: EXB841 Photocoupler IGBT DRIVE 600V 300A TLP521 tlp521 Photocoupler 3 amp IGBT EXB840 EXB851 EXB850
Text: パワーデバイス / Power Devices IGBT • IGBTドライブ用ハイブリッドIC Hybrid ICs for IGBT Drive 特長 ・ 豊富な製品系列 中速タイプ（EXB850EXB851）: 10kHz までの用途 高速タイプ（EXB840、EXB841）: 40kHz までの用途
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EXB850EXB851
10kHz
EXB840EXB841
40kHz
AC2500V
AF90343,
EXB850,
EXB851)
10kHz
EXB840,
power supply switching
EXB841
Photocoupler
IGBT DRIVE 600V 300A
TLP521
tlp521 Photocoupler
3 amp IGBT
EXB840
EXB851
EXB850
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PDF
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