Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IGBT 101 Search Results

    IGBT 101 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FD1400R12IP4D IGBT-Module IGBT-modules PrimePACK 3 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™3 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper


    Original     		PDF FD1400R12IP4D

    KL3 y6

    Abstract: No abstract text available
    Text: Technische Information / technical information DF1400R12IP4D IGBT-Module IGBT-modules PrimePACK 3 mit soft schaltendem High Power IGBT4 und Emitter Controlled Diode4 PrimePACK™3 with soft switching High Power IGBT4 and Emitter Controlled Diode4 IGBT-Chopper / IGBT-chopper


    Original     		PDF DF1400R12IP4D KL3 y6

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    calculation of IGBT snubber

    Abstract: darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.0 General Considerations for IGBT and Intelligent Power Modules H-Series IGBT and Intelligent Power Modules are based on advanced third generation IGBT and free-wheel


    Original     		PDF 00V/100A calculation of IGBT snubber darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original     		PDF 20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor

    DCR370T

    Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches


    Original     		PDF 4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34

    Untitled

    Abstract: No abstract text available
    Text: APT100GT120JR 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT120JR 50KHz E145592

    7078

    Abstract: APT100DQ120 APT150GT120JR
    Text: APT150GT120JR 1200V, 150A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT150GT120JR 50KHz E145592 7078 APT100DQ120 APT150GT120JR

    APT100DQ120

    Abstract: APT100GT120JR
    Text: APT100GT120JR 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT120JR 50KHz E145592 -226ns 928ns APT100DQ120 APT100GT120JR

    Untitled

    Abstract: No abstract text available
    Text: APT150GT120JR 1200V, 150A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT150GT120JR 50KHz E145592

    Untitled

    Abstract: No abstract text available
    Text: APT75GT120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT75GT120JRDQ3 APT75GT120JRDQ3 20KHz E145592

    Untitled

    Abstract: No abstract text available
    Text: APT75GT120JR 1200V TYPICAL PERFORMANCE CURVES APT75GT120JR E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT75GT120JR APT75GT120JR 20KHz E145592

    Untitled

    Abstract: No abstract text available
    Text: APT50GT120B2RG 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT50GT120B2RG 50KHz

    8845 diode

    Abstract: APT75GT120JRDQ3
    Text: APT75GT120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT75GT120JRDQ3 APT75GT120JRDQ3 20KHz E145592 8845 diode

    APT60DQ60

    Abstract: APT60GT60JRDQ3 APT60M75L2LL
    Text: APT60GT60JRDQ3 600V TYPICAL PERFORMANCE CURVES APT60GT60JRDQ3 E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT60GT60JRDQ3 100KHz E145592 APT60DQ60 APT60GT60JRDQ3 APT60M75L2LL

    Untitled

    Abstract: No abstract text available
    Text: APT100GT120JR 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT100GT120JR 50KHz E145592 OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT150GT120JR 1200V, 150A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT150GT120JR 50KHz E145592 fo227

    Untitled

    Abstract: No abstract text available
    Text: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT50GT120B2RDQ2G 50KHz

    Untitled

    Abstract: No abstract text available
    Text: APT50GT120B2RG 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT50GT120B2RG 50KHz Ga055)

    Untitled

    Abstract: No abstract text available
    Text: APT50GT120B2RDQ2G 1200V, 50A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT50GT120B2RDQ2G 50KHz

    BR 8050

    Abstract: BR 8050 D APT75GT120JR 150-A54 8050 sot 89
    Text: APT75GT120JR 1200V TYPICAL PERFORMANCE CURVES APT75GT120JR E E Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		PDF APT75GT120JR 20KHz E145592 BR 8050 BR 8050 D APT75GT120JR 150-A54 8050 sot 89

    nana electronics

    Abstract: nana electronics current sensors "nana electronics" Hall Current Sensors fuji ipm NANA electronics Hall Current Sensors nana electronics current sensors lx-15 collmer Voltage Multipliers collmer igbt fuji igbt n-series
    Text: CONTENTS Fuji Electric Products IGBT, S-Series Fourth Generation, PIM, 6-Packs. 2 IGBT, R-Series Fourth Generation, IP M . 3 IGBT, P-Series Third Generation, Singles & D u a ls . 4


    OCR Scan     		PDF