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    IGBT 1000V 10A Search Results

    IGBT 1000V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 1000V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		FGA50N100BNTD2 PDF

    Untitled

    Abstract: No abstract text available
    Text: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		FGL60N100BNTD O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		FGL60N100BNTD O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers


    Original     		FGA50N100BNTD PDF

    FGA50N100BNTD2

    Abstract: IGBT welder circuit
    Text: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and


    Original     		FGA50N100BNTD2 FGA50N100BNTD2 IGBT welder circuit PDF

    RG 2006 10A 600V

    Abstract: ups active power easy 600 igbt 1000v 10A FGA50N100BN
    Text: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers


    Original     		FGA50N100BNTD FGA50N100BNTD RG 2006 10A 600V ups active power easy 600 igbt 1000v 10A FGA50N100BN PDF

    Untitled

    Abstract: No abstract text available
    Text: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		FGA50N100BNT PDF

    induction heater

    Abstract: FGA50N100BNT FGA50N100BNTTU fairchild induction heater low frequency induction heater igbt 1000v 10A 30 kw induction heater
    Text: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		FGA50N100BNT 100oC induction heater FGA50N100BNT FGA50N100BNTTU fairchild induction heater low frequency induction heater igbt 1000v 10A 30 kw induction heater PDF

    igbt 1000v 10A

    Abstract: No abstract text available
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		FGA50N100BNTD2 FGA50N100BNTD2 igbt 1000v 10A PDF

    igbt induction cooker

    Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
    Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche


    Original     		FGA50N100BNTD2 FGA50N100BNTD2 igbt induction cooker induction heating cooker induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater PDF

    igbt induction cooker

    Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
    Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		FGA50N100BNTD FGA50N100BNTD FGA50N100BNTDTU igbt induction cooker FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD PDF

    igbt induction cooker

    Abstract: induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A
    Text: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		FGA50N100BNTD igbt induction cooker induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A PDF

    induction cooker application notes

    Abstract: No abstract text available
    Text: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		FGA50N100BNTD FGA50N100BNTD induction cooker application notes PDF

    fairchild induction cooker

    Abstract: induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTD FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN
    Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		FGA50N100BNTD FGA50N100BNTD fairchild induction cooker induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN PDF

    ka3525 12v to 230v inverters circuit diagrams

    Abstract: smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram
    Text: AC/DC Switch Mode Power Supply Design Guide www.fairchildsemi.com AC/DC Switch Mode Power Supply Design Guide Table Of Contents Product Information Total


    Original     		Power247TM, ka3525 12v to 230v inverters circuit diagrams smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    "induction cooker" circuit

    Abstract: induction cooker application notes FGL60N100BNTD fairchild induction cooker induction cooker circuit with IGBT IGBT FGL60N100BNTD igbt induction cooker induction cooker circuit induction heating cooker induction cooker use on component
    Text: FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		FGL60N100BNTD O-264 FGL60N100BNTD O-264-3 FGL60N100BNTDTU "induction cooker" circuit induction cooker application notes fairchild induction cooker induction cooker circuit with IGBT IGBT FGL60N100BNTD igbt induction cooker induction cooker circuit induction heating cooker induction cooker use on component PDF

    Untitled

    Abstract: No abstract text available
    Text: FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for


    Original     		FGL60N100BNTD O-264 FGL60N100BNTD PDF

    Quasi-resonant Converter for induction cooker

    Abstract: 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS
    Text: 1 Smart Power Module Series 10A to 20A Smart Power Module SPM products in compact Dual In-line Packages (DIP) offer • Adjustable current protection level · Inverter power rating of 0.4kW, 0.75kW, 1kW and 1.4kW/100V AC to 253V AC


    Original     		4kW/100V FIN1025/FIN1026 Power247TM, Quasi-resonant Converter for induction cooker 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS PDF

    AUIR0815

    Abstract: 6v 100 ohm role AUIR0815S AUIRS2191 A0815 RECOMMENDED MAXIMUM SWITCHING FREQUENCY WHEN DRIVING A CAPACITANCE C HIGH POWER INVERTER marking DLA schematics of dc to ac inverters transistor di 13001
    Text: AUIR0815S AUTOMOTIVE GRADE January 24th, 2012 BUFFER GATE DRIVER IC Features • High peak output current > 10A  Low propagation delay time  Negative turn off bias can be applied to VEE using an external supply  Two output pins permit to choose different Ron and Roff


    Original     		AUIR0815S AUIR0815 6v 100 ohm role AUIR0815S AUIRS2191 A0815 RECOMMENDED MAXIMUM SWITCHING FREQUENCY WHEN DRIVING A CAPACITANCE C HIGH POWER INVERTER marking DLA schematics of dc to ac inverters transistor di 13001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUP 303 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 C G Pin 3 E Type VCB Package Ordering Code BUP 303 1000V 23A TO-218AB Q67078-A4202-A2 Maximum Ratings


    OCR Scan     		O-218AB Q67078-A4202-A2 25arameter: B235b05 A5023 fl235b0Ã PDF

    BUP203

    Abstract: No abstract text available
    Text: SIEMENS BUP 203 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type B U P 203 VCE h 1000V 23A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 A B Q67078-A4402-A2 Maximum Ratings


    OCR Scan     		O-220 Q67078-A4402-A2 GPT05155 BUP203 PDF

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V PDF

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT PDF