Untitled
Abstract: No abstract text available
Text: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and
|
Original
|
PDF
|
FGA50N100BNTD2
|
AN7254
Abstract: AN7260 HGTG20N100D2 G20N100D2
Text: HGTG20N100D2 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR BOTTOM SIDE METAL Description
|
Original
|
PDF
|
HGTG20N100D2
O-247
520ns
HGTG20N100D2
150oC.
AN7254
AN7260
G20N100D2
|
FGA50N100BNTD2
Abstract: IGBT welder circuit
Text: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and
|
Original
|
PDF
|
FGA50N100BNTD2
FGA50N100BNTD2
IGBT welder circuit
|
Untitled
Abstract: No abstract text available
Text: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,
|
Original
|
PDF
|
FGH40T100SMD
25oductor
FGH40T100SMD
|
FGH40T100SMD
Abstract: fgh40t100 W10K AC welder IGBT circuit IGBT 1000V .200A igbt 1000v 80a DBVCE
Text: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,
|
Original
|
PDF
|
FGH40T100SMD
FGH40T100SMD
fgh40t100
W10K
AC welder IGBT circuit
IGBT 1000V .200A
igbt 1000v 80a
DBVCE
|
G20N100D2
Abstract: AN7254 AN7260 HGTG20N100D2
Text: HGTG20N100D2 S E M I C O N D U C T O R 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR
|
Original
|
PDF
|
HGTG20N100D2
O-247
520ns
HGTG20N100D2
150oC.
G20N100D2
AN7254
AN7260
|
igbt 1000v 10A
Abstract: No abstract text available
Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche
|
Original
|
PDF
|
FGA50N100BNTD2
FGA50N100BNTD2
igbt 1000v 10A
|
igbt induction cooker
Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche
|
Original
|
PDF
|
FGA50N100BNTD2
FGA50N100BNTD2
igbt induction cooker
induction heating cooker
induction cooker circuit with IGBT
induction cooker application notes
induction cooker
fairchild induction cooker
fairchild induction heater
induction cooker component
induction heater
|
CM100DY-34A
Abstract: igbt 1000v 100a
Text: MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE CM100DY-34A ¡IC . 100A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack
|
Original
|
PDF
|
CM100DY-34A
13K/W
CM100DY-34A
igbt 1000v 100a
|
CM100DY-34A
Abstract: MITSUBISHI IGBT 100A IGBT 1000V .100A igbt 1000v 100a 100A 1000V IGBT diode 100a 1000v
Text: MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE CM100DY-34A ¡IC . 100A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack
|
Original
|
PDF
|
CM100DY-34A
CM100DY-34A
MITSUBISHI IGBT 100A
IGBT 1000V .100A
igbt 1000v 100a
100A 1000V IGBT
diode 100a 1000v
|
CM100DU-34KA
Abstract: IGBT 1000V .200A
Text: MITSUBISHI IGBT MODULES CM100DU-34KA HIGH POWER SWITCHING USE CM100DU-34KA ● IC . 100A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack
|
Original
|
PDF
|
CM100DU-34KA
CM100DU-34KA
IGBT 1000V .200A
|
IGBT G 1010
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM100DU-34KA ● IC . 100A ● VCES . 1700V
|
Original
|
PDF
|
CM100DU-34KA
IGBT G 1010
|
CM100DU-34KA
Abstract: IGBT 1000V .200A
Text: MITSUBISHI IGBT MODULES CM100DU-34KA HIGH POWER SWITCHING USE CM100DU-34KA ● IC . 100A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack
|
Original
|
PDF
|
CM100DU-34KA
CM100DU-34KA
IGBT 1000V .200A
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM100DU-34KA ● IC . 100A ● VCES . 1700V
|
Original
|
PDF
|
CM100DU-34KA
|
|
|
IGBT 1000V 100A
Abstract: IGBT 1000V .100A 100A 1000V IGBT CM100DU-34KA IGBT 1000V .200A IGBT 40A
Text: 三菱半導体〈IGBTモジュール〉 CM100DU-34KA 大電力スイッチング用 CM100DU-34KA ¡IC . 100A ¡VCES . 1700V ¡絶縁形
|
Original
|
PDF
|
CM100DU-34KA
IGBT 1000V 100A
IGBT 1000V .100A
100A 1000V IGBT
CM100DU-34KA
IGBT 1000V .200A
IGBT 40A
|
CM50TU-34KA
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE CM50TU-34KA ● IC . 50A ● VCES . 1700V ● Insulated Type ● 6-elements in a pack
|
Original
|
PDF
|
CM50TU-34KA
CM50TU-34KA
|
CM50TU-34KA
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE CM50TU-34KA ● IC . 50A ● VCES . 1700V ● Insulated Type ● 6-elements in a pack
|
Original
|
PDF
|
CM50TU-34KA
CM50TU-34KA
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM50TU-34KA ● IC . 50A ● VCES . 1700V
|
Original
|
PDF
|
CM50TU-34KA
|
IGBT G 1010
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM50TU-34KA ● IC . 50A ● VCES . 1700V
|
Original
|
PDF
|
CM50TU-34KA
IGBT G 1010
|
G20N100D2
Abstract: GE 639 transistor 901 u 620 tg g20n100 443 20N TSC-1000
Text: S m HGTG20N100D2 a r r ì 20A, 1000V N-Channel IGBT M ay 1995 Features Package • 34 A, 1000V JEDEC STYLE TO-247 EMfTTER • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HG TG 20N 100D 2 is a MOS gated high voltage switching
|
OCR Scan
|
PDF
|
HGTG20N100D2
O-247
520ns
G20N100D2
GE 639 transistor
901 u 620 tg
g20n100
443 20N
TSC-1000
|
wf vqe 24 d
Abstract: AN7254 AN7260 HGTG20N100D2 transistor c90 wx2 transistor
Text: HARRIS SEIUCOND SECTOR bflE D 33 HARRIS HGTG20N100D2 S E M I C O N D U C T O R 4302271 Ü0SD21D bOT HAS 20A, 1000V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 34 Amp, 1000 Volt • Latch Free Operation ^EMITTER • Typical Fall Time 520ns
|
OCR Scan
|
PDF
|
0SD21D
TG20N10OD2
520ns
HGTG20N100D2
wf vqe 24 d
AN7254
AN7260
transistor c90
wx2 transistor
|
Untitled
Abstract: No abstract text available
Text: m H A R R IS S E M I C O N D U C T O R HGTG20N100D2 20A, 1000V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 34 Am p, 1000 Volt • Latch Free Operation • Typical Fall Tim e 520ns • High Input Im pedance • Low C onduction Loss
|
OCR Scan
|
PDF
|
HGTG20N100D2
O-247
520ns
HGTG20N100D2
|
c548 st
Abstract: No abstract text available
Text: International B Rectifier p— »d-»« « IRGTIN100M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 100A «Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losse s .Short circuit rated Vce ON < 2.7V
|
OCR Scan
|
PDF
|
IRGTIN100M12
Outline11
C-548
c548 st
|
C528 DIODE
Abstract: No abstract text available
Text: International [iraiRectifier Provisional Data Sheet PD-9.1165 IRGNIN100M12 “CHOPPER HIGH SIDE SWITCH" IGBTINT-A-PAK Low conduction loss IGBT High Side Switch Vç£ = 1200V lc = 100A 5 °— • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"
|
OCR Scan
|
PDF
|
IRGNIN100M12
requiring6500
C-528
C528 DIODE
|
