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    IFR MOSFET Search Results

    IFR MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IFR MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STSR4

    Abstract: AN1288 Silicon controller rectifier
    Text: AN1288 APPLICATION NOTE  STSRx FAMILY: MIXED-SIGNAL ICs TO DRIVE SYNCHRONOUS RECTIFIERS IN ISOLATED SMPSs F. Librizzi - P. Scalia 1. ABSTRACT A methodology capable to digitally control and, in particular, properly turn-off one or two MOSFETs used as rectifiers in switched mode power supply SMPS isolated topologies will be described in this


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    PDF AN1288 STSR4 AN1288 Silicon controller rectifier

    STSR4

    Abstract: smps without transformer AN1288 single phase 6 pin double bridge rectifiers Silicon controller rectifier STSR2 half bridge smps controller
    Text: AN1288 APPLICATION NOTE STSRx FAMILY: MIXED-SIGNAL ICs TO DRIVE SYNCHRONOUS RECTIFIERS IN ISOLATED SMPSs F. Librizzi - P. Scalia 1. ABSTRACT A methodology capable to digitally control and, in particular, properly turn-off one or two MOSFETs used as rectifiers in switched mode power supply SMPS isolated topologies will be described in this


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    PDF AN1288 STSR4 smps without transformer AN1288 single phase 6 pin double bridge rectifiers Silicon controller rectifier STSR2 half bridge smps controller

    00FF

    Abstract: 68HC05 68HC705V12 HC05 J1850 M68HC05 MC68HC705V12 eprom programmer schematic H-bridge Mosfet Driver PWM DIR
    Text: 68HC705V12 Advance Information Freescale Semiconductor, Inc., 2004. All rights reserved. This document contains information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2004. All rights reserved.


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    PDF 68HC705V12 MC68HC705V12/D MC68HC705V12 00FF 68HC05 68HC705V12 HC05 J1850 M68HC05 eprom programmer schematic H-bridge Mosfet Driver PWM DIR

    eprom programmer schematic

    Abstract: 00FF 68HC05 68HC705V12 HC05 J1850 M68HC05 MC68HC705V12
    Text: Advance Information This document contains information on a new product. Specifications and information herein are subject to change without notice. A G R E E M E N T 68HC705V12 N O N - D I S C L O S U R E HC05 R E Q U I R E D Order this document by MC68HC705V12/D


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    PDF 68HC705V12 MC68HC705V12/D eprom programmer schematic 00FF 68HC05 68HC705V12 HC05 J1850 M68HC05 MC68HC705V12

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MC68HC05V12/D Rev. 2.0 HC 5 MC68HC05V12 HCMOS Microcontroller Unit TECHNICAL DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. N O N - D I S C L O S U R E


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    PDF MC68HC05V12/D MC68HC05V12 MC68HC05V12 MC68HC05V12/D

    cdr king

    Abstract: MTP2955 00FF 68HC05 J1850 M68HC05 MC68HC05V12 MC68HC705V12
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor MC68HC05V12/D Rev. 2.0 HC 5 MC68HC05V12 HCMOS Microcontroller Unit TECHNICAL DATA Freescale Semiconductor, Inc., 2004. All rights reserved. Freescale Semiconductor, Inc. N O N - D I S C L O S U R E


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    PDF MC68HC05V12/D MC68HC05V12 MC68HC05V12 cdr king MTP2955 00FF 68HC05 J1850 M68HC05 MC68HC705V12

    956 relay 24

    Abstract: sae 1010 SCR SS 3328 nippon model ce 5422 68HC05 68HC05V12 J1850 M68HC05 MC68HC05V12 HC05V12
    Text: General Release Specification A G R E E M E N T 68HC05V12 R E Q U I R E D HC05V12GRS/D Rev. 1.0 CSIC System Design Group Austin, Texas N O N - D I S C L O S U R E December 10, 1996 A G R E E M E N T R E Q U I R E D General Release Specification N O N - D I S C L O S U R E


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    PDF 68HC05V12 HC05V12GRS/D 956 relay 24 sae 1010 SCR SS 3328 nippon model ce 5422 68HC05 68HC05V12 J1850 M68HC05 MC68HC05V12 HC05V12

    MC68HC05V12

    Abstract: 00FF 68HC05 J1850 M68HC05 MC68HC705V12 MOSFET 150 N IRF
    Text: MC68HC05V12/D Rev. 2.0 HC 5 MC68HC05V12 HCMOS Microcontroller Unit TECHNICAL DATA N O N - D I S C L O S U R E A G R E E M E N T R E Q U I R E D Technical Data Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola


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    PDF MC68HC05V12/D MC68HC05V12 MC68HC05V12 00FF 68HC05 J1850 M68HC05 MC68HC705V12 MOSFET 150 N IRF

    eprom programmer schematic

    Abstract: power regulator cdr king
    Text: Freescale Semiconductor, Inc. 68HC705V12 Advance Information This document contains information on a new product. Specifications and information herein are subject to change without notice. For More Information On This Product, Go to: www.freescale.com R E Q U I R E D


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    PDF MC68HC705V12/D 68HC705V12 MC68HC705V12 MC68HC705V12/D eprom programmer schematic power regulator cdr king

    00FF

    Abstract: 68HC05 J1850 M68HC05 MC68HC05V12 MC68HC705V12 MOSFET 150 N IRF
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MC68HC05V12/D Rev. 2.0 HC 5 MC68HC05V12 HCMOS Microcontroller Unit TECHNICAL DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. N O N - D I S C L O S U R E


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    PDF MC68HC05V12/D MC68HC05V12 00FF 68HC05 J1850 M68HC05 MC68HC05V12 MC68HC705V12 MOSFET 150 N IRF

    68HC05

    Abstract: 68HC705V12 J1850 M68HC05 MC68HC705V12 eprom programmer schematic Nippon capacitors
    Text: General Release Specification A G R E E M E N T 68HC705V12 R E Q U I R E D HC705V12GRS/D Rev. 1.0 Western MCU Design Center Tempe, Arizona N O N - D I S C L O S U R E August 14, 1996 A G R E E M E N T R E Q U I R E D General Release Specification N O N - D I S C L O S U R E


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    PDF 68HC705V12 HC705V12GRS/D MC68HC705V12GRS/D 68HC05 68HC705V12 J1850 M68HC05 MC68HC705V12 eprom programmer schematic Nippon capacitors

    STSR4

    Abstract: half bridge pwm controller half bridge smps controller isolation transformer abstract analog switch circuit using mosfet FULL WAVE mosfet RECTIFIER CIRCUITS make full-bridge SMPS smps isolated 5v output AN1288 full-bridge SMPS
    Text: AN1288 APPLICATION NOTE STSRx FAMILY: MIXED-SIGNAL ICs TO DRIVE SYNCHRONOUS RECTIFIERS IN ISOLATED SMPSs F. Librizzi - P. Scalia 1. ABSTRACT A methodology capable to digitally control and, in particular, properly turn-off one or two MOSFETs used as rectifiers in switched mode power supply SMPS isolated topologies will be described in this


    Original
    PDF AN1288 STSR4 half bridge pwm controller half bridge smps controller isolation transformer abstract analog switch circuit using mosfet FULL WAVE mosfet RECTIFIER CIRCUITS make full-bridge SMPS smps isolated 5v output AN1288 full-bridge SMPS

    1002R4CN

    Abstract: No abstract text available
    Text: AD VA N C E D POW ER T E C H N O L O G Y blE D • OEST'ìCH 0 0 0 0 7 0 5 3S1 H A V P A dvanced R o w er Te c h n o l o g y n A i<ifr-n .« r> „ POWER MOS IV™ APT1002RCN APT902RCN APT1002R4CN APT902R4CN 1000V 900V 1000V 900V 5.5A 5.5A 5.0A 5.0A


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    PDF APT1002RCN APT902RCN APT1002R4CN APT902R4CN 902RCN APT1002R/902R/1002R4/902R4CN APT1002R/1002R4CN O-254AA 1002R4CN

    Untitled

    Abstract: No abstract text available
    Text: M A R R HIP4080 I S S E M I C O N D U C T O R 80V/2.5A Peak, High Frequency H-Bridge Driver October 1993 Features • Description The HIP4080 is a high frequency, medium voltage H-Bridge N-Channel MOSFET driver IC, available in 20 lead plastic SOIC and DIP packages. The HIP4080 includes an input


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    PDF HIP4080 HIP4080

    2SK2288

    Abstract: F30S6N K2288 MOSFET 074
    Text: 6 0 V v 'J - X / f 7 —MOSFET 60 V SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2 S K 2288 F 30S 6N 60v 30a ■ R A T IN G S ■ A b s o lu te M axim um R a tin g s * Item n Symbol K [ Storage Tem perature ■?" *V -t' ■^î'in./lË Channel Tem perature


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    PDF 2SK2288 F30S6N) STO-220 K2288 2SK2288 F30S6N K2288 MOSFET 074

    2SK1681

    Abstract: usim diode F30Z50 2sk16
    Text: V X v 'J - X /t7 -M 0 S F E T VX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1681 F 30Z 50 500v 30 a ■ R A T IN G S A b s o lu te M a x im u m R a tin g s g m Ite m . IB- ':■# Symbol ; s M m i:- W : C o n d itio n s # m R a tin g s —5 5 ~ 1 5 0


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    PDF 2SK1681 F30Z50) 2SK1681 usim diode F30Z50 2sk16

    Untitled

    Abstract: No abstract text available
    Text: h a f r r is FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEG R Resistant N-Channel Power MOSFETs February 1998 Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


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    PDF FSS23A4D, FSS23A4R 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: V X v U - X M 7 -M 0 S F E T V X SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1695 F10W50C 500V 10A ■ R A TIN G S ■ S Ê ÎÎS ^ c Æ lÎS A b s o lu te M axim um R a tin g s m Ite m S y m b ol C h a n n e l T e m p e ra tu re Tstg Tch D r a in • S o u r c e V o lt a g e


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    PDF 2SK1695 F10W50C)

    d8p05

    Abstract: No abstract text available
    Text: P *3 3 S RFD8P05, RFD8P05SM, RFP8P05 -8A, -50V, 0.300 Ohm, P-Channel Power MOSFETs July 1998 Description Features -8A, -50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,


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    PDF RFD8P05, RFD8P05SM, RFP8P05 developmenta00 AN7254 AN7260. d8p05

    RFP45N06

    Abstract: No abstract text available
    Text: RFG45N06, RFP45N06, RF1S45N06SM in te fs il D ata S h e e t J u l y 19 99 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs File N u m b e r 3 5 7 4 .4 Features • 45A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF RFG45N06, RFP45N06, RF1S45N06SM TA49028. 45CTION RFP4SN06, 75BVDss RFP45N06

    75545P

    Abstract: 75545S
    Text: in terrii HUF75545P3, HUF75545S3S D ata S h e e t J u n e 1999 F ile N u m b e r 4 7 3 8 .1 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance • rDS ON = 0.01 O il, V q s = 10V


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    PDF HUF75545P3, HUF75545S3S O-220AB O-263AB 75545P HUF75545P3 HUF75545S3S O-220AB O-263AB 75545S

    TRS2-25-1

    Abstract: TA49018
    Text: RFG50N06 RFP50N06 fü HARRIS U U S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Package Features JEDEC T0-220AB TOP VIEW • 5 0 A ,60V • r DS(ON) = 0.022Q DRAIN (FLANGE) • Temperature Compensating PSPICE Model


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    PDF RFG50N06 RFP50N06 T0-220AB O-247 RFP50N06 98e-1 35e-3 83e-6) 1e-30 TRS2-25-1 TA49018

    D8P05

    Abstract: rfp8p05 625Q TA09832
    Text: inteikSI RFD8P05, RFD8P05SM, RFP8P05 D ata S heet J u ly 1999 BA, 50V, 0.300 Ohm, P-Channel Power MOSFETs File N u m b e r 23 84.2 Features • 8A, 5 0V T h e se products are P -C hannel pow e r M O S F E Ts m anufactured using th e M e ga F E T process. This process,


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    PDF RFD8P05, RFD8P05SM, RFP8P05 TA09832. AN7254 AN7260. D8P05 rfp8p05 625Q TA09832

    75332s

    Abstract: No abstract text available
    Text: inter«! HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs Ultras Th e se N -C hannel pow e r M O S F E Ts are m anu facture d u sing the innovative U ltraFET process. T h is a dvanced proce ss te ch n olo gy


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    PDF HUF75332G3, HUF75332P3, HUF75332S3S AN7254 AN7260. 75332s