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    IFM VS 0200 Search Results

    IFM VS 0200 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SF-NDVVYG0002-002M Amphenol Cables on Demand Amphenol SF-NDVVYG0002-002M 2m (6.6') 400GbE OSFP Cable - Amphenol 400-Gigabit Ethernet Passive Copper OSFP Cable (28 AWG) – OSFP to OSFP 2m (6.6') Datasheet
    SF-NDYYYH0002-002M Amphenol Cables on Demand Amphenol SF-NDYYYH0002-002M 2m (6.6') 400GbE QSFP-DD Cable - Amphenol 400-Gigabit Ethernet Passive Copper QSFP Double Density Cable (Dual Entry 27 AWG) - QSFP-DD to QSFP-DD Datasheet
    CO-058BNCX200-200 Amphenol Cables on Demand Amphenol CO-058BNCX200-200 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 200ft Datasheet
    CST2010-200LD Coilcraft Inc Current Sense Transformer, Visit Coilcraft Inc
    CST2010-200LB Coilcraft Inc Current Sense Transformer, Visit Coilcraft Inc
    CST2010-200L Coilcraft Inc Current sensor, SMT, RoHS Visit Coilcraft Inc

    IFM VS 0200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IFM VS 0100

    Abstract: schema relais sonde ifm VS 0200 relais schema de branchement relais schema data book electronique transistor BU 110 BK-5 SCHEMA BK relay
    Text: R Strömungssensoren für den Anschluß an Verstärker SN 0100 4,5 1,5 110 6,9 55 35,5 75 VS 0200 61,2 Auswerteelektronik Anschluß: 1 Sensor 37,5 Klemmschienengehäuse Einsatzbereich Elektrische Ausführung 8,75 Strömungsüberwachung AC Betriebsspannung


    Original     		PDF \DATEN\300\DB-FORM--PZD/01/09/94 IFM VS 0100 schema relais sonde ifm VS 0200 relais schema de branchement relais schema data book electronique transistor BU 110 BK-5 SCHEMA BK relay

    IFM VS 0200

    Abstract: data book electronique SF1204 sonde de temperature electronique sonde M12X1 Maxim100 sonde type k
    Text: R Strömungssensoren für den Anschluß an Verstärker SF1204 SFM12ABB/US 52 27 13 Gewindebauform M12x1 M12x1 M12x1 Steckverbindung 7,7 12 17 Einsatzbereich Standard Gehäusematerial V4A Werkstoff-Nr. 1.4571 Flüssige Medien Mediumtemperatur [°C] -25 . +80


    Original     		PDF SF1204 SFM12ABB/US M12x1 M12-Steckverbindur \DATEN\300\DB-FORM--PZD/01/10/94 IFM VS 0200 data book electronique SF1204 sonde de temperature electronique sonde M12X1 Maxim100 sonde type k

    IFM VS 0200

    Abstract: data book electronique sonde type k SFR12ABB sonde sonde de temperature bu 1 monitor schema
    Text: R Strömungssensoren für den Anschluß an Verstärker SF 3204 SFR12ABB/US 72 15 Gewindebauform 45 7,7 12 Steckverbindung G1 2 M12x1 G½ 27 Einsatzbereich Standard Gehäusematerial Werkstoff-Nr. V4A 1.4571 Flüssige Medien Mediumtemperatur Einstellbereich


    Original     		PDF SFR12ABB/US M12x1 \DATEN\300\DB-FORM--PZD/01/02/95 IFM VS 0200 data book electronique sonde type k SFR12ABB sonde sonde de temperature bu 1 monitor schema

    IGBT abb

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 200 A IGBT Module LoPak4 SPT 5SNS 0200V120100 PRELIMINARY • • • • • Doc. No. 5SYA1526-01 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package


    Original     		PDF 0200V120100 5SYA1526-01 Po200V120100 CH-5600 IGBT abb

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 200 A IGBT Module LoPak4 SPT 5SNS 0200V120100 PRELIMINARY • • • • • Doc. No. 5SYA1526-01 Jun. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package


    Original     		PDF 0200V120100 5SYA1526-01 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: 1SS88 Silicon Schottky Barrier Diode for CATV Balanced Mixer REJ03G0615-0200 Previous: ADE-208-187A Rev.2.00 May 09, 2005 Features • Low capacitance. (C = 0.97 pF max) • High reliability with glass seal. Ordering Information Type No. 1SS88 Cathode band


    Original     		PDF 1SS88 REJ03G0615-0200 ADE-208-187A) 1SS88 DO-35 GRZZ0002ZB-A DO-35) Unit2607

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 22 Sept, 2006 Data Sheet Issue:- 1 IXYS Company Rectifier Diode Types W4534N#020 to W4534N#060 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 200–600 V VRSM Non-repetitive peak reverse voltage, (note 1)


    Original     		PDF W4534N

    W4534NC

    Abstract: W4534N W453 100A249
    Text: WESTCODE An Date:- 22 Sept, 2006 Data Sheet Issue:- 1 IXYS Company Rectifier Diode Types W4534N#020 to W4534N#060 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 200–600 V VRSM Non-repetitive peak reverse voltage, (note 1)


    Original     		PDF W4534N W4534NC W453 100A249

    HSD278

    Abstract: PUSF0002ZB-A
    Text: HSD278 Silicon Schottky Barrier Diode for Detector REJ03G0605-0200 Previous: ADE-208-1015A Rev.2.00 Apr 15, 2005 Features • Low forward voltage, Low capacitance. • Super small Flat Lead Package (SFP) is suitable for surface mount design. Ordering Information


    Original     		PDF HSD278 REJ03G0605-0200 ADE-208-1015A) PUSF0002ZB-A Tj5-900 Unit2607 HSD278 PUSF0002ZB-A

    HSB123

    Abstract: No abstract text available
    Text: HSB123 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0546-0200 Previous: ADE-208-487A Rev.2.00 Mar 04, 2005 Features • Low capacitance, proof against high voltage. • Fast recovery time. • CMPAK package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HSB123 REJ03G0546-0200 ADE-208-487A) PTSP0003ZB-A Unit2607 HSB123

    HSB83

    Abstract: No abstract text available
    Text: HSB83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0187-0200Z Previous: ADE-208-489A Rev.2.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • CMPAK package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HSB83 REJ03G0187-0200Z ADE-208-489A) HSB83

    HSB2838

    Abstract: No abstract text available
    Text: HSB2838 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0549-0200 Previous: ADE-208-486A Rev.2.00 Mar 04, 2005 Features • Fast recovery time. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information


    Original     		PDF HSB2838 REJ03G0549-0200 ADE-208-486A) PTSP0003ZB-A t5-900 Unit2607 HSB2838

    Untitled

    Abstract: No abstract text available
    Text: HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0189-0200Z Previous: ADE-208-307A Rev.2.00 Mar.22.2004 Features • High reverse voltage. (VR = 250 V) • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HSU83 REJ03G0189-0200Z ADE-208-307A) HSU83

    HSB124S

    Abstract: No abstract text available
    Text: HSB124S Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0547-0200 Previous: ADE-208-488A Rev.2.00 Mar 04, 2005 Features • Low reverse current. (IR = 0.01 µA max) • CMPAK package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HSB124S REJ03G0547-0200 ADE-208-488A) PTSP0003ZB-A rectifi5-900 Unit2607 HSB124S

    6000A 16 1

    Abstract: m2408n
    Text: EVALUATION LABORATORY Rating Report - Issue 2 Date - 23 July, 2004 Origin - PAR 985 Total Pages - 13 Fast Recovery Diode Types M2408N#020 to M2408N#060 Old Type No.: SM02-06CXC504 Author EL Check/Approval QA Approval S & M Approval N. A. Tarling Abstract The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice manufacturing


    Original     		PDF M2408N SM02-06CXC504 M1825NC020-060 6000A 16 1

    Untitled

    Abstract: No abstract text available
    Text: EVALUATION LABORATORY Rating Report - Issue 2 Date - 23 July, 2004 Origin - PAR 985 Total Pages - 13 Fast Recovery Diode Types M2408N#020 to M2408N#060 Old Type No.: SM02-06CXC504 Author EL Check/Approval QA Approval S & M Approval N. A. Tarling Abstract The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice manufacturing


    Original     		PDF M2408N SM02-06CXC504 M1825NC020-060

    MBN1200E33D

    Abstract: ge 521
    Text: IGBT MODULE Spec.No.IGBT-SP-02005 R8 P1/6 MBN1200E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-02005 MBN1200E33D 000cycles) MBN1200E33D ge 521

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-02005 R9 MBN1200E33D Silicon N-channel IGBT FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.


    Original     		PDF IGBT-SP-02005 MBN1200E33D 000cycles)

    HRC0201A

    Abstract: No abstract text available
    Text: HRC0201A Silicon Schottky Barrier Diode for Rectifying REJ03G0618-0200 Rev.2.00 Jan 09, 2009 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package UFP is suitable for compact and high-density surface mount design.


    Original     		PDF HRC0201A REJ03G0618-0200 HRC0201ATRF PWSF0002ZA-A REJ03G0618-0200 HRC0201A

    DSA00285350

    Abstract: HRL0103C HRL0103C-N hrl0103
    Text: HRL0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Lineup of environmental friendly Halogen free type HRL0103C-N • Extremely small Flat Lead Package (EFP) is suitable for surface mount design.


    Original     		PDF HRL0103C REJ03G0367-0200 HRL0103C-N) HRL0103C-N PXSF0002ZA-A REJ03G0367-0200 DSA00285350 HRL0103C HRL0103C-N hrl0103

    HRU0103C

    Abstract: PTSP0002ZA-A
    Text: HRU0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0071-0200 Rev.2.00 Apr 08, 2008 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Ultra small Resin Package URP is suitable for surface mount design. Ordering Information


    Original     		PDF HRU0103C REJ03G0071-0200 REJ03G0071-0200 PTSP0002ZA-A HRU0103C PTSP0002ZA-A

    HRC0103C

    Abstract: No abstract text available
    Text: HRC0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0069-0200 Rev.2.00 Apr 08, 2008 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Ultra small Flat Package UFP is suitable for surface mount design. Ordering Information


    Original     		PDF HRC0103C REJ03G0069-0200 REJ03G0069-0200 PWSF0002ZA-A HRC0103C

    Untitled

    Abstract: No abstract text available
    Text: HRD0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0070-0200 Rev.2.00 Mar 05, 2007 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Lineup of environmental friendly Halogen free type HRD0103C-N • Super small Flat Lead Package (SFP) is suitable for surface mount design.


    Original     		PDF HRD0103C REJ03G0070-0200 HRD0103C-N) HRD0103C HRD0103C-N PUSF0002ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Spec.No.IGBT-SP-02008 R5 IGBT MODULE MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-02008 MBN900D45A 000cycles)