IF9120
Abstract: IRFR9120 IRFR91209A IRFU9120 kp158 623E3 4411E
Text: IRFU9120, IRFR9120 S E M I C O N D U C T O R 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package • 5.6A, 100V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.600Ω • Temperature Compensating PSPICE Model
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PDF
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IRFU9120,
IRFR9120
O-251AA
IRFU9120
IRFR9120
235e-12
1e-30
01e-3
05e-6)
IF9120
IRFR91209A
kp158
623E3
4411E
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IF9120
Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334
Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field
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Original
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PDF
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IRFR9120,
IRFU9120
TA17501.
IF9120
TA17501
IRFR9120
IRFR91209A
IRFU9120
TB334
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IF9120
Abstract: IRFR9120 irfu9120 IRFR91209A TB334 4411E
Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs January 2002 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are
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Original
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PDF
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IRFR9120,
IRFU9120
TA17501.
IF9120
IRFR9120
irfu9120
IRFR91209A
TB334
4411E
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4411E
Abstract: IF9120
Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs July 1999 3987.4 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are
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Original
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PDF
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IRFR9120,
IRFU9120
TA17501.
4411E
IF9120
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IF9120
Abstract: No abstract text available
Text: IRFR9120, IRFU9120 H A R R IS X Semiconductor 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Description Features 5.6 A, 100 V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava
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OCR Scan
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PDF
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IRFR9120,
IRFU9120
600S2
84e-4
83e-6)
235e-12
1e-30
01e-3
05e-6)
IF9120
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IRFR9120
Abstract: p-channel pspice model IF9120 TA17501 123E5
Text: IRFU9120, IRFR9120 & 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package JEDEC T 0-25 1 A A • 5.6A, 100V SOURCE • r DS ON = 0.600Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve
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OCR Scan
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PDF
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IRFR9120
IRFU9120
IRFR9120
1e-30
05e-6)
23o-3
23e-5)
05e-3
35e-5)
p-channel pspice model
IF9120
TA17501
123E5
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if9120
Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334 623E3 irfr9120 harris
Text: I R Semiconductor F I R R F 9 U 1 9 2 1 2 , 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 5.6A, 100V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava
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OCR Scan
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PDF
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IRFR9120,
IRFU9120
600S2
TB334
IRFR9120
O-252AA
IF9120
IRFU9120
O-251
if9120
TA17501
IRFR91209A
TB334
623E3
irfr9120 harris
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